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Sökning: swepub > Larsson Anders > Larsson Anders 1957 > Haglund Åsa 1976

  • Resultat 61-70 av 83
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61.
  • Stattin, Martin, 1983, et al. (författare)
  • Graphene as transparent electrode for GaN-based VCSELs
  • 2012
  • Ingår i: International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan. ; , s. ThP-OD-34-
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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62.
  • Sun, Jie, 1977, et al. (författare)
  • Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt
  • 2012
  • Ingår i: IEEE Transactions on Semiconductor Manufacturing. - : Institute of Electrical and Electronics Engineers (IEEE). - 0894-6507 .- 1558-2345. ; 25:3, s. 494-501
  • Tidskriftsartikel (refereegranskat)abstract
    • Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950 degrees C. Various characterization methods verify that the synthesized thin films are largely sp(2) bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.
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63.
  • Szczerba, Krzysztof, 1985, et al. (författare)
  • 30 Gbps 4-PAM transmission over 200m of MMF using an 850 nm VCSEL
  • 2011
  • Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 19:26, s. B203-B208
  • Tidskriftsartikel (refereegranskat)abstract
    • We present high speed real time, error free 4-PAMtransmissionfor short range optical links based on a VCSEL operating at 850 nm, a multimode fibre and a simple intensity detector. Transmission speeds of 25 Gbps and 30 Gbps are demonstrated, and the maximum fibre reaches were 300 m and 200 m, respectively. The 4-PAM is also compared with OOK transmission at 25 Gbps, and we find that at this bit rate 4-PAM increases the error free transmission distance in the multimode fibre by 100 m, compared to OOK.
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64.
  • Szczerba, Krzysztof, 1985, et al. (författare)
  • 30 Gbps 4-PAM transmission over 200m of MMF using an 850 nm VCSEL
  • 2011
  • Ingår i: European Conference and Exposition on Optical Communications, ECOC. - 2162-2701. - 9781557529312 ; , s. 1-3
  • Konferensbidrag (refereegranskat)abstract
    • Real time, error free 4-PAM transmission at 25 Gbps and 30 Gbps over 300 m and200m of multimode fiber, respectively, using a VCSEL operating at the wavelength of 850 nm.
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65.
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66.
  • Szczerba, Krzysztof, 1985, et al. (författare)
  • 4-PAM for high-speed short-range optical communications
  • 2012
  • Ingår i: Journal of Optical Communications and Networking. - 1943-0620 .- 1943-0639. ; 4:11, s. 885-894
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, we compare 4-pulse amplitudemodulation and on–off keying modulation formats at highspeed for short-range optical communication systems. Thetransmission system comprised a directly modulated verticalcavitysurface-emitting laser operating at a wavelength of850 nm, an OM3Å multimode fiber link, and a photodetectordetecting the intensity at the receiver end. The modulationformats were compared both at the same bit-rate and at thesame symbol rate. The maximum bit-rate used was 25 Gbps.Propagation distances up to 600 m were investigated at12.5 Gbps. All measurements were done in real time andwithout any equalization.
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67.
  • Wang, Shu Min, 1963, et al. (författare)
  • Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
  • 2011
  • Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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68.
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69.
  • Westbergh, Petter, 1981, et al. (författare)
  • 32 Gb/s transmission experiments using high speed 850 nm VCSELs
  • 2009
  • Ingår i: Conference on Lasers and Electro-Optics (CLEO). - 2162-2701. - 9781557528698 ; , s. 1-2
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate error free transmission at bit rates up to 32 Gb/s at room temperature and 25 Gb/s at 85degC using a 9 mum oxide aperture 850 nm VCSEL. The VCSEL design is optimized for high speed operation by minimizing parasitics, reducing self-heating, and using strained InGaAs quantum wells to improve differential gain.
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70.
  • Westbergh, Petter, 1981, et al. (författare)
  • 32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL
  • 2009
  • Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 45:7, s. 366 - 368
  • Tidskriftsartikel (refereegranskat)abstract
    • Error free transmission over multimode fibre at data rates up to 32 Gbit/s at 25C and 25 Gbit/s at 85C using an oxide confined 850 nm VCSEL biased at a current density of 11–14 kA/cm2 is demonstrated. The VCSEL is optimised for high-speed by reducing capacitance and self-heating and by using strained InGaAs quantum wells for high differential gain.
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  • Resultat 61-70 av 83
Typ av publikation
konferensbidrag (48)
tidskriftsartikel (35)
Typ av innehåll
refereegranskat (68)
övrigt vetenskapligt/konstnärligt (15)
Författare/redaktör
Gustavsson, Johan, 1 ... (76)
Westbergh, Petter, 1 ... (54)
Kögel, Benjamin, 197 ... (26)
Haglund, Erik, 1985 (23)
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Bengtsson, Jörgen, 1 ... (22)
Modh, Peter, 1968 (10)
Szczerba, Krzysztof, ... (8)
Debernardi, P. (8)
Karlsson, Magnus, 19 ... (6)
Andrekson, Peter, 19 ... (6)
Jedrasik, Piotr, 195 ... (6)
Safaisini, Rashid, 1 ... (6)
Joel, A. (5)
Fattal, David (5)
Sorin, W. V. (5)
Wang, Shu Min, 1963 (4)
Sadeghi, Mahdad, 196 ... (4)
Amann, M. C. (4)
Vukusic, Josip, 1972 (4)
Agrell, Erik, 1965 (3)
Stattin, Martin, 198 ... (3)
Zhao Ternehäll, Huan ... (3)
Baveja, P. P. (3)
Gierl, Christian (3)
Meissner, Peter (3)
Hopfer, Friedhelm (3)
Bimberg, Dieter (3)
O'Reilly, E. P. (3)
Haglund, Emanuel, 19 ... (3)
Tan, Michael (3)
Sun, Jie, 1977 (2)
Adolfsson, Göran, 19 ... (2)
Yurgens, Avgust, 195 ... (2)
Olsson, Bengt-Erik, ... (2)
White, I. H. (2)
Maywar, D. N. (2)
Agrawal, G. P. (2)
Bimberg, D. (2)
Carlsson, Christina, ... (2)
Davani, Hooman A. (2)
Grasse, Christian (2)
Zogal, Karolina (2)
Gründl, Tobias (2)
Küppers, F. (2)
Ortsiefer, M. (2)
Fiol, Gerrit (2)
Healy, S. B. (2)
Söderberg, Emma, 198 ... (2)
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Lärosäte
Chalmers tekniska högskola (83)
Linköpings universitet (1)
Språk
Engelska (83)
Forskningsämne (UKÄ/SCB)
Teknik (71)
Naturvetenskap (20)

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