| 1. |
- Intarasiri, Saweat, et al.
(författare)
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Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide
- 2007
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101:8, s. 084311-
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Tidskriftsartikel (refereegranskat)abstract
- Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C 12 + implantation of a p -type (100) Si wafer at a fluence of 6.5× 1017 ions cm2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV I 127 ions to a very low fluence of 1012 ions cm2 at temperatures from 80 to 800 °C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.
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| 2. |
- Lindahl, Erik, 1979-, et al.
(författare)
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Epitaxial NiO(100) and NiO(111) films grown by atomic layer deposition
- 2009
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Ingår i: Journal of Crystal Growth. - : Elsevier. - 0022-0248 .- 1873-5002. ; 311:16, s. 4082-4088
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic layer deposition on both MgO (1 0 0) and alpha-Al2O3 (0 0 1) substrates at temperatures as low as 200 degrees C by using bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as precursors. The films grown on the MgO (1 0 0) substrate show the expected cube on cube growth while the NiO (1 1 1) films grow with a twin rotated 180 degrees on the alpha-Al2O3 (0 0 1) substrate surface. The films had columnar microstructures on both substrate types. The single grains were running throughout the whole film thickness and were significantly smaller in the direction parallel to the surface. Thin NiO (1 1 1) films can be grown with high crystal quality with a FWHM of 0.02-0.05 degrees in the rocking curve measurements.
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| 3. |
- Sundqvist, Jonas, et al.
(författare)
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Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study
- 2006
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Ingår i: Thin Solids Films. - : Elsevier BV. - 0040-6090. ; 514:1-2, s. 63-68
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of the tetragonal rutile-type SnO2 phase have been deposited by both atomic layer deposition (ALD) and chemical vapour deposition (CVD) using the SnI4–O2 precursor combination. Depositions were carried out in the temperature region of 350–750 °C on α-Al2O3(0 1 2) substrates. In both cases the films were found to grow epitaxially with the in-plane orientation relationships [0 1 0]SnO2 || [1 0 0]α-Al2O3 and [1 0 1¯]SnO2 || [1¯ 2¯ 1]α-Al2O3. Films grown by ALD were found to be close to perfectly single crystalline, contained a low density of defects and were almost atomically smooth. The CVD films were found to have a much rougher film morphology, and exhibited both grain boundaries and twin formation.
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| 4. |
- Törndahl, Tobias, et al.
(författare)
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Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition
- 2005
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 276, s. 102-110
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Tidskriftsartikel (refereegranskat)abstract
- A combined X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) study have been carried out on copper films grown by atomic layer deposition at 400 °C. The copper films have been grown on single crystalline (0 0 1) oriented α-Al2O3 up to a thickness of 500 nm. The films were relaxed and the diffraction peak broadening in 2θ was mainly dependent on the copper grain size. Broadening of the diffraction peaks in ω was found to be related to defects (mosaicity and intrinsic microstrain). The deposited films were epitaxial and grew with the (1 1 1) plane in parallel to the substrate surface. Extensive twinning in the copper grains in different Cu1 1 1 directions occurred according to the TEM study, both in directions perpendicular to the substrate surface ([1 1 1] and ) and along other 1 1 1 directions as well. As an effect of a twin, an extra Cu(5 1 1) orientation was present in the XRD data.
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