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Sökning: swepub > Larsson Anders > Larsson Anders 1957

  • Resultat 11-20 av 348
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11.
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12.
  • Wang, Shu Min, 1963, et al. (författare)
  • Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm
  • 2007
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:10, s. 4348-4351
  • Tidskriftsartikel (refereegranskat)abstract
    • Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 μm, smooth surface with an average roughness below 2 nm and good rectifying I-V characteristics. Dark line defects are found in the QW. Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. © 2006 Elsevier B.V. All rights reserved.
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13.
  • Westbergh, Petter, 1981, et al. (författare)
  • Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications
  • 2008
  • Ingår i: Semiconductor Lasers and Laser Dynamics III. - : SPIE. ; 6997, s. 69970Y-1-8-
  • Konferensbidrag (refereegranskat)abstract
    • GaAs-based VCSELs emitting near 1.3 ÎŒm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB·Hz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
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14.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Comparison of optical and structural quality of GaIn(N) As analog and digital quantum wells grown by molecular beam epitaxy
  • 2008
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:12, s. 125002-
  • Tidskriftsartikel (refereegranskat)abstract
    • A set of Ga0.625In0.375(N) As single quantum well (QW) samples with the identical total amounts of Ga and In and QW thicknesses was designed and grown by both the analog and the digital methods using molecular beam epitaxy. The N exposure time in the GaInNAs samples was kept the same. The inter-band gap recombination in the analog and the digital InGaAs QWs appears in a similar transition energy range as a result of In segregation. Temperature-dependent photoluminescence (PL) measurements were performed on the GaInNAs samples. An S-shaped dependence of the transition energy on temperature was observed in the digital GaInNAs QWs but not in the analog GaInNAs QW. Post-growth rapid thermal annealing had remarkably different effects on the PL intensity: an increase for the analog InGaAs QW and for the analog and digital GaInNAs QWs, but a decrease for the digital InGaAs QW with increasing annealing temperature. The GaIn(N) As samples grown by the digital method showed weaker PL intensities and smaller wavelength blue-shifts than the similar samples grown by the analog method. Possible strain relaxation mechanisms are discussed.
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15.
  • Zhao Ternehäll, Huan, 1982, et al. (författare)
  • Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
  • 2009
  • Ingår i: JOURNAL OF CRYSTAL GROWTH. - : Elsevier BV. - 0022-0248. ; 311:7, s. 1723-1727
  • Tidskriftsartikel (refereegranskat)abstract
    • We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate.
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16.
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17.
  • Borgentun, Carl, 1979, et al. (författare)
  • Method for measuring reflectance of semiconductor disk laser gain element under optical pump excitation
  • 2011
  • Ingår i: Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 1-6/5 2011. - Washington, D.C. : OSA.
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • We present a new measurement method for measuring the spectral reflectance of a semiconductor disk laser gain element under optical pumping, providing valuable information on the spectral dependence of gain under close-to-normal operating conditions.
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  • Resultat 11-20 av 348
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tidskriftsartikel (164)
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Typ av innehåll
refereegranskat (304)
övrigt vetenskapligt/konstnärligt (44)
Författare/redaktör
Gustavsson, Johan, 1 ... (199)
Westbergh, Petter, 1 ... (116)
Wang, Shu Min, 1963 (85)
Haglund, Åsa, 1976 (83)
Sadeghi, Mahdad, 196 ... (74)
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Haglund, Erik, 1985 (62)
Bengtsson, Jörgen, 1 ... (49)
Haglund, Emanuel, 19 ... (37)
Wei, Yongqiang, 1975 (34)
Andrekson, Peter, 19 ... (34)
Szczerba, Krzysztof, ... (34)
Karlsson, Magnus, 19 ... (32)
Kögel, Benjamin, 197 ... (31)
Roelkens, Gunther (24)
Baets, Roel G. (23)
Adolfsson, Göran, 19 ... (22)
Modh, Peter, 1968 (22)
Lengyel, Tamas, 1986 (20)
Kumari, Sulakshna (20)
Zhao, Qing Xiang, 19 ... (19)
Safaisini, Rashid, 1 ... (18)
Larkins, Eric (17)
Simpanen, Ewa, 1987 (16)
Melanen, P. (15)
Sorin, W. V. (15)
Zhao Ternehäll, Huan ... (14)
Grabowski, Alexander ... (14)
Uusimaa, Peteri (13)
Lim, Jun (12)
Joel, A. (12)
Sujecki, S. (12)
Söderberg, Emma, 198 ... (12)
Mackenzie, R (11)
Stattin, Martin, 198 ... (10)
Debernardi, P. (10)
Lai, Zonghe, 1948 (9)
Sipilä, Pekko (9)
Amann, M. C. (9)
Mathai, S (9)
Torres Company, Vict ... (8)
Bull, S (8)
Goyvaerts, J. (8)
Agrell, Erik, 1965 (7)
Borgentun, Carl, 197 ... (7)
Song, Yuxin, 1981 (7)
Tan, M. R. (7)
Strassner, Martin (7)
Lavrencik, Justin (7)
Ralph, Stephen E. (7)
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Chalmers tekniska högskola (344)
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