| 1. |
|
|
| 2. |
- Abdalla, Suliman, et al.
(author)
-
Circuit Implementation of Mechanism for Charge-Sharing Suppression for Photon-Counting Pixel Arrays
- 2005
-
In: 23rd NORCHIP Conference 2005. - : IEEE conference proceedings. - 1424400643 ; , s. 137-140
-
Conference paper (peer-reviewed)abstract
- This work proposes an efficient circuit implementation of a mechanism for charge-sharing suppression in photon-counting pixel arrays based on current-mode circuits for the analog parts. The additional circuits needed for charge-sharing suppression in a four-pixel cluster, leads to an increase in power consumption of 36% and only a marginal increase in circuit area. The implemented pixel with window-discrimination, managing charge-sharing in a four-pixel cluster and with an event-counter of 13 bits, consists of 300 transistors and has a power consumption of 2.7 μW when idle. It is implemented in a 120nm CMOS process and the presented results are based on simulations.
|
|
| 3. |
- Akbari-Saatlu, Mehdi, et al.
(author)
-
Silicon Nanowires for Gas Sensing : A Review
- 2020
-
In: Nanomaterials. - : MDPI AG. - 2079-4991. ; 10:11
-
Research review (peer-reviewed)abstract
- The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.
|
|
| 4. |
|
|
| 5. |
- Andersson, Henrik, 1975-, et al.
(author)
-
Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact
- 2008
-
In: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 23:7, s. 1-10
-
Journal article (peer-reviewed)abstract
- In this paper, lateral effect position-sensitive detectors based on the MOS principle have been fabricated in lengths of 15 mm, 45 mm and 60 mm. The gate contact covering the active area consists of indium tin oxide which is a degenerate semiconductor transparent in the visible spectral range. Characterization and analysis have both been performed especially withparticular focus on the nonlinearity believed to be caused by stray stress induced in the inversion channel originating in the indium tin oxide gate contact. Stress in the channel will change the resistance in a non-uniform manner because of the piezoresistance effect, thus causing a nonlinearity in the position determination. It has been shown that the heat treatmentgreatly influences the linearity of the position-sensitive detectors. A heat treatment performed correctly results in 60 mm and 15 mm detectors with nonlinearity within ±0.1% and 45 mm detectors with nonlinearity within ±0.15% over 60% of the active length. This is an improvement over the previous results with this type of MOS position-sensitive detector. By performing a correctly timed heat treatment this PSD type has the potential to be used incommon position-sensing applications.
|
|
| 6. |
- Andersson, Henrik, et al.
(author)
-
Assembling surface mounted components on ink-jet printed double sided paper circuit board
- 2014
-
In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:9
-
Journal article (peer-reviewed)abstract
- Printed electronics is a rapidly developing field where many components can already be manufactured on flexible substrates by printing or by other high speed manufacturing methods. However, the functionality of even the most inexpensive microcontroller or other integrated circuit is, at the present time and for the foreseeable future, out of reach by means of fully printed components. Therefore, it is of interest to investigate hybrid printed electronics, where regular electrical components are mounted on flexible substrates to achieve high functionality at a low cost. Moreover, the use of paper as a substrate for printed electronics is of growing interest because it is an environmentally friendly and renewable material and is, additionally, the main material used for many packages in which electronics functionalities could be integrated. One of the challenges for such hybrid printed electronics is the mounting of the components and the interconnection between layers on flexible substrates with printed conductive tracks that should provide as low a resistance as possible while still being able to be used in a high speed manufacturing process. In this article, several conductive adhesives are evaluated as well as soldering for mounting surface mounted components on a paper circuit board with ink-jet printed tracks and, in addition, a double sided Arduino compatible circuit board is manufactured and programmed.
|
|
| 7. |
|
|
| 8. |
- Andersson, Henrik, et al.
(author)
-
Chemically programmed ink-jet printed resistive WORM memory array and readout circuit
- 2014
-
In: Materials Research Express. - : Institute of Physics (IOP). - 2053-1591. ; 1:3, s. 035021-
-
Journal article (peer-reviewed)abstract
- In this paper an ink-jet printed write once read many (WORM) resistive memory fabricated on paper substrate is presented. The memory elements are programmed for different resistance states by printing triethylene glycol monoethyl ether on the substrate before the actual memory element is printed using silver nano particle ink. The resistance is thus able to be set to a broad range of values without changing the geometry of the elements. A memory card consisting of 16 elements is manufactured for which the elements are each programmed to one of four defined logic levels, providing a total of 4294 967 296 unique possible combinations. Using a readout circuit, originally developed for resistive sensors to avoid crosstalk between elements, a memory card reader is manufactured that is able to read the values of the memory card and transfer the data to a PC. Such printed memory cards can be used in various applications.
|
|
| 9. |
- Andersson, Henrik
(author)
-
Development of Process Technology for Photon Radiation Measurement Applications
- 2007
-
Licentiate thesis (other academic/artistic)abstract
- This thesis presents work related to new types of photo detectors and their applications. The focus has been on the development of process technology and methods by means of experimentation and measurements. The overall aim has been to develop and improve photon radiation measurement applications which are possible to manufacture using standard Si processing technology. A new type of position sensitive detector that has switching possibilities based on the MOS principle has been fabricated and characterized. The influence of mechanical stress on the linearity of position sensitive detectors has been investigated. The results show that mechanical stress arising, for example, by the mounting of detectors in capsules can have an impact on device performance. Under normal circumstances these effects are rather small, but are considered to be worthwhile taking into account. Electroless deposition of Nickel including various dopants in porous silicon was performed to manufacture electrical contacts for this interesting material. After heat treatment it was confirmed by X-ray diffraction that Nickel silicide had been formed and I-V measurements show that different contacts exhibit Ohmic and rectifying behaviour. Spectrometers are used extensively in the process and food industry to measure both the chemical content and the amount of substances used during manufacturing. These instruments are often rather bulky and costly, though the trend is towards smaller and more portable equipment. A spectrometer based on an array of Fabry-Perot interferometers mounted close to an array detector is shown to be a viable option for the manufacture of a very compact device. Such a device has minimal intermediate optics and it may be possible, in the future, for it to be developed and completely integrated with a detector array into a single unit.
|
|
| 10. |
- Andersson, Henrik, et al.
(author)
-
Electroless deposition and silicidation of Ni contacts into p-type Porous Silicon
- 2008
-
In: Journal of porous materials. - : Springer Science and Business Media LLC. - 1380-2224 .- 1573-4854. ; 15:3, s. 335-341
-
Journal article (peer-reviewed)abstract
- Porous Silicon (PS) has attracted much attention since the discovery of its photo luminescent behavior. It has also been used for various other applications such as electroluminescent light emitting-diodes (LEDs), photodetectors and solar cells. For such devices, it is important to make good metallic Ohmic contacts to the PS in order to maximize the efficiency. In order to produce buried contacts, barrier layers, Schottky devices, etc. in PS, it is advantageous to deposit metal that covers not only the surface of the porous layer, but also the inside walls and the bottom of the pores. In this work experiments were performed to examine the morphology and properties of electroless deposition of Nickel into p-type PS and subsequent formation of Nickel silicide after heat treatment. Circular PS samples of 6 mm diameter were produced by anodizing p-type Silicon wafers for 15 min and were subsequently plated with Ni using three different plating baths. The pores are on average 20 µm deep and 4 µm wide. Two samples of each type were heat treated in an nitrogen atmosphere for one hour at 400 and 600°C respectively to produce Nickel silicide. Reference samples were made by means of electron beam evaporation of Ni. SEM micrographs show that the best pore coverage was achieved using the Ni plating bath containing hypophosphite. I–V characterization shows that different rectifying and Ohmic contacts can be formed between electroless deposited Ni and PS depending on the conditions of the heat treatment. XRD and EDX characterizations show that both the NiSi and Ni2Si phases exist in the sample at the same time.
|
|
