| 1. |
- Bogdanov, Alex, 1962, et al.
(författare)
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Dual pass electron beam writing of bit arrays with sub-100 nm bits on imprint lithography masters for patterned media production
- 2003
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Ingår i: Microelectronic Engineering. - 0167-9317. ; 67-68, s. 381-389
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Konferensbidrag (refereegranskat)abstract
- A model and experimental results of a new method for exposing bit arrays with electron beam lithography are presented. The method allows the reduction of the amount of pattern data by orders of magnitude. The method utilises two overlapped exposures. In the first exposure a 1-D array of parallel stripes is written and in the second exposure another I-D array of parallel stripes orthogonal to the first ones. Exposure dose is chosen so that after development only the areas where a positive resist have been subjected to overlapped exposure are fully developed. The bit size is determined by the widths of the stripes. In order to compensate for an approximately 50% loss of contrast a contrast enhancement scheme utilizing a trilayer resist was used.
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| 2. |
- Jedrasik, Piotr, 1957, et al.
(författare)
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Application of calixarene for nanometer magnetic particle fabrication
- 2000
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Ingår i: Microelectronic Engineering. - 0167-9317. ; 53, s. 497-500
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Konferensbidrag (refereegranskat)abstract
- An application of the negative tone electron beam resist Calixarene for fabrication of nanometer magnetic particles is reported. Thorough resist characterisation is performed. Proximity tests for characterization of the intraproximity behaviour of the resist on the tested substrate is investigated to compensate for modulation of lateral dimensions due to electron scattering. Magnetic particles were fabricated by a combination of EBL and ion beam milling using Calixarene as a transfer layer down to Fe. We fabricated arrays of circular particles with characteristic dimensions down to 40 nm. Initial results of topographic and magnetic force microscopy are reported
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| 6. |
- Jedrasik, Piotr, 1957
(författare)
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HSQ application for sub-10nm scale lithography.
- 2004
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Ingår i: Nano and Giga Challenges in Microelectronics, proceedings.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- An application of hydrogen silsesquioxane (HSQ) negative tone electron beam resist for a sub-10 nanometerscale fabrication is reported.
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