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Sökning: WFRF:(Kaczmarczyk M)

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  • Kaczmarczyk, M, et al. (författare)
  • Comprehensive study of InAs/GaAs quantum dots by means of complementary methods
  • 2009
  • Ingår i: Materials Science & Engineering B: Solid-State Materials for Advanced Technology. - : Elsevier BV. - 0921-5107. ; 165:1-2, s. 98-102
  • Konferensbidrag (refereegranskat)abstract
    • Structural, optical, and electronic properties of self-organized InAs/GaAs quantum dots (QDs) were studied by means of atomic force microscopy (AFM), photoluminescence measurements (PL), and deep level transient spectroscopy (DLTS). We found that a well defined group of QDs with low size dispersion as revealed by AFM maintains its properties in PL spectra even if the QDs are covered by GaAs. Two well separated emission lines attributed to the QD-related ground- and excited-state transitions. respectively are found in the PL spectra. Contrary to the optical picture of a characteristic simplicity, DLTS spectra are found with higher complexity. This is due to combined thermal/tunneling processes and multi-particle emission. Despite the relatively good understanding of optical and electrical properties of QDs in PL and DLTS, respectively, there are still discrepancies between electrical and optical data for the energy of the QD ground states, which need more investigations to be explained.
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  • Kaczmarczyk, M., et al. (författare)
  • The influence of inhomogeneous trap distribution on results of DLTS study
  • 2011
  • Ingår i: Microelectronics and Reliability. - : Elsevier BV. - 0026-2714. ; 51:7, s. 1159-1161
  • Tidskriftsartikel (refereegranskat)abstract
    • A model is developed to describe how a narrow distribution of deep traps adjacent to quantum dots (QDs) influences the trap-related signals measured by frequency scanned deep level transient spectroscopy (FS-DLTS). By comparison with experiment, it is demonstrated that traps with a steep concentration gradient, positioned in the so called transition layer close to the edge of the depletion region ("lambda-effect"), have a strong influence on DLTS signal amplitudes. This is manifested by an extreme sensitivity to the change in the Fermi-level position when temperature is varied.
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  • Kaniewska, M., et al. (författare)
  • Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy
  • 2010
  • Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 39:6, s. 766-772
  • Tidskriftsartikel (refereegranskat)abstract
    • The coexistence of quantum confined energy levels and defect energy levels in quantum dot (QD) structures may cause difficulties in distinguishing between their different origin when using deep-level transient spectroscopy (DLTS). Using InAs/GaAs QDs as demonstration vehicles, we present methodologies to obtain such a classification by DLTS. QD-related spectra measured as a function of repetition frequency of electrical pulses, f, or temperature, T, and reverse voltage, V (R), are depicted as contour plots on (f, V (R)) and (T, V (R)) planes, thus reflecting the complex thermal and tunneling emission of electrons from the ground and excited states. Defect-related levels give rise to different contour patterns and undergo modification, exhibiting double-peak structured emission when defects are agglomerated in the vicinity of the QD plane. This effect is interpreted in terms of an interaction between electron states in traps and the confined QD states.
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  • Resultat 11-20 av 33

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