| 11. |
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| 12. |
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| 13. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
- 2009
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:134, s. 134-136
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Tidskriftsartikel (refereegranskat)abstract
- We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.
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| 14. |
- Adolfsson, Göran, 1981, et al.
(författare)
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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3 um Double Quantum-Well GaInNAs/GaAs Lasers
- 2008
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Ingår i: IEEE Journal of Quantum Electronics. ; 44:7, s. 607-616
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Tidskriftsartikel (refereegranskat)abstract
- We present an experimental and theoretical investigationof the temperature dependence of the threshold current fordouble quantum well GaInNAs–GaAs lasers in the temperaturerange 10 C–110 C. Pulsed measurements of the threshold current have been performed on broad and narrow ridge wave guide(RWG) lasers. The narrow RWG lasers exhibit high characteristic temperatures (T0)of 200 K up to a critical temperature (Tc), above which T0 is reduced by approximately a factor of 2. The T0-values for broad RWG lasers are significantly lower than those for the narrow RWG lasers, with characteristic temperatures on the order of 100 (60) K below (above). Numerical simulations, using a model that accounts for lateral diffusion effects, show good agreement with experimental data and reveal that a weakly temperature dependent lateral diffusion current dominates thethreshold current for narrow RWG lasers.
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| 15. |
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| 16. |
- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:7, s. 1195-7
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Tidskriftsartikel (refereegranskat)abstract
- In this letter we investigate the changes in the surface morphology and emission wavelength of InAs quantum dots (QDs) during initial GaAs encapsulation by atomic force microscopy and photoluminescence. The density (2.9×1010 cm-2) and height (7.9±0.4 nm) of the uncapped QDs decrease and saturate at 0.6×1010 cm-2 and 4 nm, respectively, after the deposition of 4 monolayers (MLs) of GaAs. A model for the evolution of surface morphology is proposed. Photoluminescence spectra of the surface dots show a wavelength shift from 1.58 to 1.22 ?m when the GaAs capping layer thickness increases from 0 to 8 MLs.
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| 17. |
- Ferdos, Fariba, 1966, et al.
(författare)
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Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
- 2003
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 251:1-4, s. 145-9
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Tidskriftsartikel (refereegranskat)abstract
- Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.
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| 18. |
- Ferdos, Fariba, 1966, et al.
(författare)
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Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence
- 2001
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Ingår i: Journal of Crystal Growth. - 0022-0248. ; 227-228, s. 1140-5
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Tidskriftsartikel (refereegranskat)abstract
- We present a study of the optimised growth conditions for InAs quantum dots (QDs) grown on GaAs substrates by solid source molecular beam epitaxy (SSMBE). Growth conditions for best luminescence intensity and linewidth were found within narrow windows of substrate temperature (500-520°C) and nominal InAs layer thickness (3.3-3.7 monolayers). The emission wavelength of such InAs QDs capped by GaAs was around 1.24 ?m. However, this is redshifted to 1.3 ?m or more by capping the InAs QDs with a thin layer of InxGa1-xAs. The results show that both In content and thickness of the capping layer can be used to tune the emission wavelength. Atomic force microscopy images show that the surface recovers to two-dimensional when depositing In0.2Ga0.8As while remaining three-dimensional when depositing In0.4Ga0.6As.
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| 19. |
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| 20. |
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