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| 2. |
- da Silva, AF, et al.
(författare)
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Impurity resistivity of the double-donor system Si : P,Bi
- 1999
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 60:23, s. 15824-15828
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Tidskriftsartikel (refereegranskat)abstract
- The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].
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| 3. |
- Aboelfotoh, M. O., et al.
(författare)
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Schottky-barrier behavior of metals on n- and p-type 6H-SiC
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:7, s. 075312-
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky-barrier height of a number of metals (Ti, Ni, Cu, and Au) on n- and p-type Si-terminated 6H-SiC has been measured in the temperature range 150-500 K. It is found that the barrier height to n-type 6H-SiC does not exhibit a temperature dependence, while for p-type 6H-SiC the change in the barrier height with temperature follows very closely the change in the indirect energy gap in 6H-SiC. These results are inconsistent with models of Schottky-barrier formation based on the concept of a charge neutrality level. Furthermore, the present results cannot be reconciled with a defect pinning mechanism, contrary to the conclusions of earlier studies on III-V compound semiconductors. We suggest that chemical bonding at the metal-semiconductor interface plays an important role in determining the Schottky-barrier height.
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| 4. |
- Abrashev, M. V., et al.
(författare)
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Raman spectroscopy of CaMnO(3) : Mode assignment and relationship between Raman line intensities and structural distortions
- 2002
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 65:18, s. 1-9
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Tidskriftsartikel (refereegranskat)abstract
- Polarized Raman spectra of oriented finely twinned CaMnO(3) thin films and nonpolarized Raman spectra of CaMnO(3) ceramics were studied at room temperature using several excitation laser wavelengths. The selection rules for the polarized Raman spectra, obtained from samples consisting of finely twinned orthorhombic domains, were calculated and the symmetry of all observed Raman lines was determined. The relationship between the intensity of the Raman lines and the distortions in the ABO(3) perovskites with GdFeO(3)-type structure is discussed. These distortions can be described as superposition of four simple basic distortions: two MnO(6) octahedral tilts, Jahn-Teller deformation of Mn(3+) O(6) octahedra, and shift of the A ions from their sites in the ideal perovskite. Twenty of the 24 Raman-allowed modes in the real GdFeO(3)-type structure have counterparts in only one of the four simpler structures, obtained by a single basic distortion. The assignment of the Raman lines of CaMnO(3) to definite atomic vibrations, most of them activated by a single basic distortion, was made in close comparison with the results of lattice dynamical calculations and the Raman spectra of isostructural LaMnO(3) and CaGeO(3).
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| 5. |
- Ahlberg, Martina, et al.
(författare)
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Effect of ferromagnetic proximity on critical behavior
- 2012
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 85:22, s. 224425-1-224425-6
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated the magnetic phase transition in amorphous Fe93Zr7(x angstrom)/Co95Zr5(1 angstrom) multilayers, where x = 25, 50, and 75. The extremely thin CoZr layer induces magnetic order at temperatures well above the inherent ordering temperature of Fe93Zr7. The changes in the critical exponent beta, associated with the temperature dependence of the magnetization, imply a crossover from two-to three-dimensional behavior as the FeZr thickness is reduced, consistent with a substantial magnetic induction in the FeZr layers. In addition we determined the exponents delta and gamma, of the critical isotherm and the susceptibility, respectively, and their values confirm the nonuniversal character of the phase transition. Scaling of the results yields an excellent data collapse and is found to hold in the crossover regime where the universality hypothesis is not applicable.
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| 9. |
- Akerman, J. J., et al.
(författare)
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Dislocation-mediated creep of highly separated vortices in a-axis-oriented HgBa2CaCu2O6+delta thin films
- 2001
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 64:2
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Tidskriftsartikel (refereegranskat)abstract
- Using ac susceptibility, we determine the critical current density J(c) and the flux creep activation energy U of an a-axis-oriented HgBa2CaCu2O6+delta thin film. The critical current density at helium temperatures is found to be 4.6 x 10(4) A/cm(2), i.e., about two orders of magnitude smaller than for corresponding films with c-axis orientation. The temperature and ac field dependent activation energy is consistent with dislocation-mediated flux creep and well described by U(T,H-ac)=U-o(1-t(4))H-ac(-1/2) with t=T/T-c, T-c=120K, and U-o = 0.77 eV Oe(1/2) for temperatures T>45 K and in the field range studied. The activation energy is of the same order as that found in c-axis-oriented films. Below T = 45 K the activation energy is observed to decrease as thermally assisted quantum creep becomes increasingly important.
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| 10. |
- Akerman, J. J., et al.
(författare)
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Two-stage crossover from thermal to quantum flux creep of dilute vortex ensembles in various high-T-c superconducting thin films
- 2001
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 64:9
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Tidskriftsartikel (refereegranskat)abstract
- The thermal-to-quantum flux creep crossover at low vortex densities has been studied in YBa2Cu3O7, TlBa2CaCu2O7-delta, and HgBa2CaCu2O6+delta thin films using ac susceptibility. The crossover temperatures T-cr are 10-11, 17, and 30 K, respectively. Both thermal and quantum flux creep is suppressed as the vortex density is decreased. We observe a two-stage nature in the crossover behavior which appears to be a general property of all the three materials studied.
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