| 1. |
- Ahmed, Istaq, 1972, et al.
(författare)
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Improved Proton Conductivity in Spark-Plasma Sintered Dense Ceramic BaZr0.5In0.5O3-delta
- 2010
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Ingår i: Electrochemical and Solid State Letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 13:11
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Tidskriftsartikel (refereegranskat)abstract
- Spark-plasma sintering method was used to prepare dense proton conducting perovskite oxide BaZr0.5In0.5O3-delta. Analysis of X-ray powder diffraction data showed that the sample adopt the cubic crystal structure having the space group Pm3m. Thermogravimetric analysis of prehydrated samples showed significant mass losses beyond 300 degrees C due to loss of protons as water vapor. Scanning electron microscope images show that the grain size of the spark-plasma sintered dense sample was smaller than that of solid-state sintered porous sample. The highest total proton conductivity (2 X 10(-3) S cm(-1) at 450 degrees C) was found for dense spark-plasma sintered sample under wet H-2 than the samples prepared by other routes.
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| 2. |
- Badel, Xavier, et al.
(författare)
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Electrochemical etching of n-type silicon based on carrier injection from a back side p-n junction
- 2003
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 6:6, s. C79-C81
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Tidskriftsartikel (refereegranskat)abstract
- A technique for electrochemical etching of n-type silicon in aqueous hydrofluoric acid is presented. This technique differs from photoelectrochemical etching because the holes (positive carriers) needed for the dissolution reaction to occur, are not photogenerated. The principle developed here is to inject these positive carriers using a p-n junction under forward bias formed at the back side of the sample. Drift-diffusion of holes through the wafer thickness allows a chemical dissolution reaction at the interface with the electrolyte. To enable holes diffusing through the wafer the minority carrier lifetime must be sufficiently high making the technique well adapted for high resistivity silicon. However, extension to low resistivity wafers has been achieved. Results show the possibility of forming pore arrays and diverse 3D structures.
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| 3. |
- Barrios, C. A., et al.
(författare)
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GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP : Fe regrowth
- 2000
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Ingår i: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 3:9, s. 439-441
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Tidskriftsartikel (refereegranskat)abstract
- Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 degrees C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP: Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.
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| 4. |
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| 5. |
- Björkbacka, Åsa, et al.
(författare)
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Radiation Induced Corrosion of Copper in Anoxic Aqueous Solution
- 2012
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Ingår i: Electrochemical and solid-state letters. - : ELECTROCHEMICAL SOC INC. - 1099-0062 .- 1944-8775. ; 15:5, s. C5-C7
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Tidskriftsartikel (refereegranskat)abstract
- The effect of gamma radiation on corrosion of copper under anoxic conditions in pure water has been studied experimentally. Copper samples submerged in water were exposed to dose rates of 0.37 or 0.77 kGy/h. Reference samples were used throughout. The copper surfaces have been examined using the techniques of SEM-EDS, IRAS, CR spectroscopy and AFM. Dissolution of copper was measured using ICP-OES. The results show that irradiated samples are more corroded than corresponding reference samples. This is also reflected by the increased concentration of copper in water after irradiation. Surface examination also reveals local corrosion features.
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| 6. |
- Chen, Si, et al.
(författare)
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Current Instability for Silicon Nanowire Field-Effect Sensors Operating in Electrolyte with Platinum Gate Electrodes
- 2011
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:7, s. J34-J37
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Tidskriftsartikel (refereegranskat)abstract
- Current instability is observed for silicon nanowire field-effect transistors operating in electrolytes with Pt gate electrodes. A comparative study involving an Ag/AgCl-reference gate electrode reveals that the effect results from a drift in the potential at the Pt-electrode/electrolyte interface. In a phosphate buffer saline of pH 7.4, the stabilization of the potential of the Pt electrode was found to require approximately 1000 s. A concurrent potential drift, with a comparable time constant, occurring at the electrolyte/oxidized-nanowire interface rendered a complex device current response which complicated the interpretation of the results.
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| 7. |
- Davoodi, Ali, et al.
(författare)
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In-situ investigation of localized corrosion of aluminum alloys in chloride solution using integrated EC-AFM/SECM technique
- 2005
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 8:6, s. B21-B24
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Tidskriftsartikel (refereegranskat)abstract
- Scanning electrochemical microscopy (SECM) has been integrated with electrochemical atomic force microscopy (EC-AFM), and applied for in situ studies of localized corrosion of Al alloys in NaCl solution. The instrument utilizes a dual mode probe, which functions both as a normal cantilever and as an ultramicroelectrode. The I-/I3- redox mediator was used for mapping of local electrochemical current. Concurrent topography and electrochemical activity maps have been obtained on the same surface area with micrometer lateral resolution. Preliminary results show ongoing localized dissolution related to intermetallic particles in the Al alloys, which may occur well below the breakdown potential.
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| 8. |
- Feng, B., et al.
(författare)
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Catalysts and performances for direct methanol low-temperature (300 to 600 degrees C) solid oxide fuel cells
- 2006
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 9:2, s. A80-A81
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Tidskriftsartikel (refereegranskat)abstract
- A novel anode catalyst, C-MO-SDC (C=activated carbon/carbon black, M=Cu, Ni, Co, SDC=Ce0.9Sm0.1O1.95) was synthesized by employing a citrate/nitrate combustion technique. Carbon materials, e.g., activated carbon and carbon black were first used to improve the solid oxide fuel cell (SOFC) anode properties, especially to improve the microstructure and to enhance the anode conductivity and catalyst function for directly operating methanol as the fuel. The resulting anode catalyst C-MO-SDC materials used in a SOFC device have successfully achieved a high power density of 0.25 W cm(-2) by directly operating the methanol at 560 degrees C.
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| 9. |
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| 10. |
- Gao, Xindong, et al.
(författare)
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Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness
- 2011
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:7, s. H268-H270
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 mu Omega cm.
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