| 1. |
- ANDERSSON, CBM, et al.
(författare)
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CORE-LEVEL PHOTOEMISSION FROM (III)-TYPE INAS SURFACES
- 1994
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Ingår i: Journal de Physique IV. - : EDP Sciences. - 1155-4339 .- 1764-7177. ; 4:C9, s. 209-212
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Tidskriftsartikel (refereegranskat)abstract
- The InAs(111)2x2 and InAs(($$$) over bar 111)1x1 surfaces have been studied with high resolution core level spectroscopy. For the InAs(($$$) over bar 111)1x1 surface both the In 4d and the As 3d core levels display strong surface core level shifts, while for the InAs(111)2x2 surface only the In 4d level shows a detectable surface shift. The results indicate that the InAs(($$$) over bar 111)1x1 surface is relaxed, with atom layer displacement extending to subsurface layers. Unexpectedly, we find no surface shifted anion core level for the InAs(111)2x2 surface.
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| 2. |
- ANDERSSON, CBM, et al.
(författare)
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SPUTTERED AND ANNEALED INAS(111)OVER-BAR - AN UNRECONSTRUCTED SURFACE
- 1994
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028 .- 1879-2758. ; 307, s. 885-889
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of the InAs(111BAR)1 X 1 surface has been investigated by angle resolved photoelectron spectroscopy along the symmetry lines GAMMAKBAR, GAMMAMBAR, and GAMMAMBAR of the surface Brillouin zone. The bulk valence band structure was calculated using a combination of the linear augmented plane-wave method and the relativistic augmented plane-wave method. We have projected the theoretical bulk band structure onto the surface Brillouin zone to separate surface states from surface resonances. Two surface related structures, S1 and S2, have been observed and their E(i)(k(parallel-to)) dispersions are established. Both S1 and S2 show the symmetry of the 1 X 1 surface Brillouin zone, which is consistent with the observed 1 X 1 LEED pattern. We identify S1 as the As-derived dangling bond state, and S2 is associated with the backbonds connecting the As atoms in the surface layer with the underlying In layer.
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| 3. |
- ANDERSSON, CBM, et al.
(författare)
-
SURFACE ELECTRONIC-STRUCTURE OF INAS(110)
- 1993
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 47:4, s. 2427-2430
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Tidskriftsartikel (refereegranskat)abstract
- The electronic structure of the InAs(I 10) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines GAMMA-XBARBAR and GAMMA-YBARBAR of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k parallel-to dispersion along the line GAMMA-XBARBAR and the line GAMMA-YBARBAR of the SBZ has been determined. The structures are identified as A5, A4, and A3 along GAMMA-XBARBAR and as A5, A4, and C2 along GAMMA-YBARBAR.
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| 4. |
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