| 1. |
- Bozkurt, M., et al.
(författare)
-
Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field
- 2013
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical society. - 1098-0121 .- 1550-235X. ; 88, s. Article ID: 205203-
-
Tidskriftsartikel (refereegranskat)abstract
- We investigate the effect of an external magnetic field on the physical properties of the acceptor hole statesassociated with single Mn acceptors placed near the (110) surface of GaAs. Cross-sectional scanning tunnelingmicroscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported bytheoretical calculations based on a tight-binding model of Mn acceptors in GaAs. For Mn acceptors on the (110)surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantlythe magnetic anisotropy landscape. However, the acceptor hole wave function is strongly localized around theMn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mnacceptors placed on deeper layers below the surface, the acceptor hole wave function is more delocalized andthe corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However, themagnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 Tcan hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis.We predict that substantially larger magnetic fields are required to observe a significant field dependence of thetunneling current for impurities located several layers below the GaAs surface.
|
|
| 2. |
- Borschel, Christian, et al.
(författare)
-
A New Route toward Semiconductor Nanospintronics : Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
- 2011
-
Ingår i: Nano letters (Print). - Washington : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 11:9, s. 3935-3940
-
Tidskriftsartikel (refereegranskat)abstract
- We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.
|
|
| 3. |
- Islam, Fhokrul, et al.
(författare)
-
Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform
- 2018
-
Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 97:15
-
Tidskriftsartikel (refereegranskat)abstract
- The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here, we report on a detailed and systematic investigation of transition metal (TM) doped Sb2Te3. By combining density functional theory calculations with complementary experimental techniques, i.e., scanning tunneling microscopy, resonant photoemission, and x-raymagnetic circular dichroism, we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM doped topological insulators. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V-and Fe-doped Sb2Te3 display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity dependent and can vary from in plane to out of plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM doped Sb2Te3 in the ferromagnetic state.
|
|
| 4. |
- Liu, R. S., et al.
(författare)
-
CoFe alloy as middle layer for strong spin dependent quantum well resonant tunneling in MgO double barrier magnetic tunnel junctions
- 2013
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 87:2, s. 024411-
-
Tidskriftsartikel (refereegranskat)abstract
- We report on spin dependent quantum well (QW) resonances in the CoFe alloy middle layer of CoFe/MgO/CoFe/MgO/CoFeB double barrier magnetic tunnel junctions. The dI/dV spectra reveal clear resonant peaks for the parallel magnetization configurations, which can be related to the existence of QW resonances obtained from first-principles calculations. We observe that the differential tunneling magnetoresistance (TMR) exhibits an oscillatory behavior as a function of voltage with a sign change as well as a pronounced TMR enhancement at resonant voltages at room temperature. The observation of strong QW resonances indicates that the CoFe film possesses a long majority spin mean-free path, and the substitutional disorder does not cause a significant increase of scattering. Both points are confirmed by first-principles electronic structure calculation. DOI: 10.1103/PhysRevB.87.024411
|
|
| 5. |
|
|
| 6. |
- Nossa, Javier, et al.
(författare)
-
Electric control of a {Fe4} single-molecule magnet in a single-electron transistor
- 2013
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 88:22, s. Article ID: 224423-
-
Tidskriftsartikel (refereegranskat)abstract
- Using first-principles methods, we study theoretically the properties of an individual {Fe-4} single-molecule magnet (SMM) attached to metallic leads in a single-electron transistor geometry. We show that the conductive leads do not affect the spin ordering and magnetic anisotropy of the neutral SMM. On the other hand, the leads have a strong effect on the anisotropy of the charged states of the molecule, which are probed in Coulomb blockade transport. Furthermore, we demonstrate that an external electric potential, modeling a gate electrode, can be used to manipulate the magnetic properties of the system. For a charged molecule, by localizing the extra charge with the gate voltage closer to the magnetic core, the anisotropy magnitude and spin ordering converges to the values found for the isolated {Fe-4} SMM. We compare these findings with the results of recent quantum transport experiments in three-terminal devices.
|
|
| 7. |
- Nossa, Javier, 1979-, et al.
(författare)
-
Electric control of spin states in frustrated triangular molecular magnets
- 2023
-
Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 107:24
-
Tidskriftsartikel (refereegranskat)abstract
- Frustrated triangular molecular magnets are a very important class of magnetic molecules since the absence of inversion symmetry allows an external electric field to couple directly with the spin chirality that characterizes their ground state. The spin-electric coupling in these molecular magnets leads to an efficient and fast method of manipulating spin states, making them an exciting candidate for quantum information processing. The efficiency of the spin-electric coupling depends on the spin-induced electric-dipole moment of the frustrated spin configurations contributing to the chiral ground state. In this paper, we report on first-principles calculations of spin-electric coupling in a {V3} triangular magnetic molecule. We have explicitly calculated the spin-induced charge redistribution within the magnetic centers that is responsible for the spin-electric coupling. Furthermore, we have generalized the method of calculating the strength of the spin-electric coupling to calculate any triangular spin-1/2 molecule with C3 symmetry and have applied it to calculate the coupling strength in {V15} molecular magnets.
|
|
| 8. |
- Sadowski, Janusz, et al.
(författare)
-
Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
- 2017
-
Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 9:6, s. 2129-2137
-
Tidskriftsartikel (refereegranskat)abstract
- (Ga,Mn)As having a wurtzite crystal structure was coherently grown by molecular beam epitaxy on the 1100 side facets of wurtzite (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time, a truly long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by the proper selection/choice of both the core and outer shell materials. © The Royal Society of Chemistry.
|
|
| 9. |
- Wu, Phillip M., et al.
(författare)
-
Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
- 2012
-
Ingår i: Journal of Nanotechnology. - New York : Hindawi Publishing Corporation. - 1687-9503 .- 1687-9511. ; 2012
-
Tidskriftsartikel (refereegranskat)abstract
- Nanowires with magnetic doping centers are an exciting candidate for the study of spin physics and proof-of-principle spintronics devices. The required heavy doping can be expected to have a significant impact on the nanowires' electron transport properties. Here, we use thermopower and conductance measurements for transport characterization of Ga 0.95Mn 0.05As nanowires over a broad temperature range. We determine the carrier type (holes) and concentration and find a sharp increase of the thermopower below temperatures of 120 K that can be qualitatively described by a hopping conduction model. However, the unusually large thermopower suggests that additional mechanisms must be considered as well. © 2012 Phillip M. Wu et al.
|
|
| 10. |
- Aikebaier, Faluke, et al.
(författare)
-
Effects of short-range electron-electron interactions in doped graphene
- 2015
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 92:15
-
Tidskriftsartikel (refereegranskat)abstract
- We study theoretically the effects of short-range electron-electron interactions on the electronic structure of graphene, in the presence of substitutional impurities. Our computational approach is based on the π orbital tight-binding model for graphene, with the electron-electron interactions treated self-consistently at the level of the mean-field Hubbard model. The finite impurity concentration is modeled using the supercell approach. We compare explicitly noninteracting and interacting cases with varying interaction strength and impurity potential strength. We focus in particular on the interaction-induced modifications in the local density of states around the impurity, which is a quantity that can be directly probed by scanning tunneling spectroscopy of doped graphene. We find that the resonant character of the impurity states near the Fermi level is enhanced by the interactions. Furthermore, the size of the energy gap, which opens up at high-symmetry points of the Brillouin zone of the supercell upon doping, is significantly affected by the interactions. The details of this effect depend subtly on the supercell geometry. We use a perturbative model to explain these features and find quantitative agreement with numerical results.
|
|
