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Sökning: WFRF:(Caymax M)

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2.
  • Peto, G, et al. (författare)
  • Formation of epitaxial CoSi2 films on Si and on Si/Si80Ge20 (100) by reactive deposition epitaxy
  • 2002
  • Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 81:1, s. 37-39
  • Tidskriftsartikel (refereegranskat)abstract
    • CoxTi1-x layers were deposited on Si (100) and on Si/Si80Ge20 (100) capped with 30- or 40-nm-thick Si at 650 degreesC substrate temperature at 1x10(-6) Pa pressure. The Co-silicide films grown by reactive deposition epitaxy were characterized by Rutherford backscattering-channeling, x-ray difraction, by depth profile analysis of the components, and by sheet resistance measurements. The Ti content of the deposited Co layers was between 0.1 and 8 at. %. The epitaxy of the layers on Si and on Si/Si80Ge20 improved by increasing the Ti concentration. The minimum yield of the channeling and the full width at half maximum value of the rocking curve of CoSi2 decreased. The sheet resisitance of the formed layers was also minimal in these cases. The method applied is promising to form epitaxial CoSi2 layers on SixGe1-x substrates.
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3.
  • Jacob, A P, et al. (författare)
  • Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p(+) poly-Si1-xGex and poly-Si gate materials
  • 2002
  • Ingår i: Semiconductor Science and Technology. - : Iop Publishing Ltd. - 0268-1242 .- 1361-6641. ; 17:9, s. 942-946
  • Tidskriftsartikel (refereegranskat)abstract
    • A low-temperature electrical characterization of ultrathin oxide MOS capacitors with p(+) poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFETs. The aim of this study is to compare the low-temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that all the poly-Si and poly-Si1-xGex gated MOS structures exhibit two centres of polarity change (zero-temperature coefficients) in capacitance. The second polarity change leads to an exclusive phenomenon in these structures. The low-temperature capacitance is found to be less than high-temperature capacitance at strong accumulation and this is in contrast to what has been observed so far in metal-gated capacitors. It is also observed that the temperature dependence of the tunnelling current is only on the oxide thickness and not on the gate material used.
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  • Resultat 1-3 av 3

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