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| 2. |
- Bergqvist, Lars, 1976-, et al.
(författare)
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Magnetic and electronic structure of (Ga1-xMnx)As
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:20, s. 205201-
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Tidskriftsartikel (refereegranskat)abstract
- We present theoretical calculations of the magnetic and electronic structure of Mn-doped GaAs (in the zinc-blende structure). The magnetic properties are shown to be very sensitive to structural defects, in particular, As antisite defects and Mn at interstitial positions. Only when considering such defects can the experimental magnetic moments be reproduced by first-principles theory. We present a simple model for understanding the connection between the magnetic ordering and the As antisites, and the way in which the defects help to stabilize a partial disordered local-moment state. The connection between the energetics of the Mn substitution and the As antisite concentration is also analyzed. In addition, we compare the calculated magnetic properties and electronic structures of Mn situated on substitutional sites (Mn replacing a Ga atom) and on interstitial sites, where in agreement with observations the interstitial site is found to be less favorable. Finally, combining our first-principles calculations of the spin-wave excitation energies with a classical Heisenberg Hamiltonian we have calculated interatomic exchange interactions, and using Monte Carlo simulations we present theoretical values of the critical temperature as a function of Mn concentration.
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| 3. |
- Bultmark, Fredrik, 1973-
(författare)
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Distorted Space and Multipoles in Electronic Structure Calculations
- 2009
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- This thesis concerns methods for electronic structure calculations and some applications of the methods. The augmented planewave (APW) basis set and it’s relatives LAPW (linearised APW) and APW+lo (local orbitals) have been widely used for electronic structure calculations. Here a modification of the APW basis set based on a transformation of the basis functions from a curvilinear coordinate system. Applications to a few test systems show that the modified basis set may speed up electronic structure calculations of sparse systems. The local density approximation (LDA) is used in density functional theory. Although it is the simplest possible approximation possible for the unknown exchange-correlation energy functional, it has proven to give quite accurate results for a wide range of systems. LDA fails in systems where the non-local effects are important. By including non-local effects by adding an orbital dependent term to the energy functional, through for example the LDA+U method, the calculated properties of many materials are closer to experimental observations. In the thesis the most general formulation of the LDA+U method is presented and a new way of interpreting the results of a calculations by formulating the orbital dependent part of the energy functional in terms of multipole momentum tensors. Applications to some early actinide systems leads to a reformulations of Hund’s rules for polarisations associated with the spin and orbital magnetic moment and a suggestion for similar rules, Katt’s rules, valid in the strong spin orbit coupling regime.
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| 4. |
- Carvalho, Rodrigo P.
(författare)
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Organic Electrode Battery Materials : A Journey from Quantum Mechanics to Artificial Intelligence
- 2022
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Batteries have become an irreplaceable technology in human life as society becomes progressively more dependent on electricity. The demand for novel battery technologies has increased fast, especially with the popularisation of different portable devices. However, the current battery industry relies heavily on non-renewable resources that are also prone to provoke environmental harm. Among the possible candidates for the next generation of batteries, organic electroactive materials (OEMs) have become attractive due to a series of advantages: vastly accessible from renewable raw materials; highly versatile due to the possible functionalisation mechanisms; possibly lower production costs; reduced environmental impacts; etc. Nevertheless, some drawbacks need to be overcome before OEMs become competitive. Issues with energy density, rate capability and cycling stability hinder their final technological application. This thesis thereby discusses fundamental aspects of OEMs and proposes novel techniques to accelerate the materials discovery process.The first part of this thesis presents a pathway to systematically investigate organic materials by combining quantum mechanics calculations and crystal structure predictions. An evolutionary algorithm predicts the crystal structure of several OEMs, enabling an initial assessment of the electronic structure and the thermodynamics of the ionic insertion mechanism in these compounds. Furthermore, this first part also suggests an approach to tailor OEMs, identifying their charge storage limits and the possible occurrence of metastable phases during the ion insertion process. However, the presented strategy, while accurate, is seriously limited by its high computational demands, which are unrealistic for high-throughput screening of novel materials.Since organic materials represent a possibly limitless universe of compounds, alternative techniques are needed. Thus, the second part of this thesis combines quantum mechanics and artificial intelligence (AI), rendering a powerful platform to aid this task. An “AI-\textit{kernel}” was employed to analyse millions of organic compounds, discovering novel possible organic battery materials. Moreover, the AI accurately identified common functional groups associated with higher-voltage electrodes and suggested features that may aid future materials design. Furthermore, the kernel can also identify materials suitable for Na- and K-ion batteries and anticipate their redox stability.In conclusion, this thesis has focused on investigating fundamental properties of organic electroactive materials, particularly the ionic insertion process in batteries. Furthermore, AI-driven methodologies have also been proposed, accurately evaluating OEMs and enabling fast access to the gigantic organic realm when searching for novel battery electrode materials.
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| 5. |
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| 6. |
- Castleton, Christopher, 1969-, et al.
(författare)
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Managing the supercell approximation for charged defects in semiconductors : Finite-size scaling, charge correction factors, the band-gap problem, and the ab initio dielectric constant
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 73:035215, s. 11-
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Tidskriftsartikel (refereegranskat)abstract
- The errors arising in ab initio density functional theory studies of semiconductor point defects using the supercell approximation are analyzed. It is demonstrated that (a) the leading finite size errors are inverse linear and inverse cubic in the supercell size and (b) finite size scaling over a series of supercells gives reliable isolated charged defect formation energies to around +-0.05 eV. The scaled results are used to test three correction methods. The Makov-Payne method is insufficient, but combined with the scaling parameters yields an ab initio dielectric constant of 11.6+-4.1 for InP. Gamma point corrections for defect level dispersion are completely incorrect, even for shallow levels, but realigning the total potential in real-space between defect and bulk cells actually corrects the electrostatic defect-defect interaction errors as well. Isolated defect energies to +-0.1 eV are then obtained using a 64 atom supercell, though this does not improve for larger cells. Finally, finite size scaling of known dopant levels shows how to treat the band gap problem: in < or = 200 atom supercells with no corrections, continuing to consider levels into the theoretical conductin band (extended gap) comes closest to experiment. However, for larger cells or when supercell approximation errors are removed, a scissors scheme stretching the theoretical band gap onto the experimental one is in fact correct.
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| 8. |
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| 9. |
- Castleton, C. W. M., et al.
(författare)
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Density functional theory calculations of defect energies using supercells
- 2009
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Ingår i: Modelling and Simulation in Materials Science and Engineering. - : IOP Publishing. - 0965-0393 .- 1361-651X. ; 17:8, s. 084003-
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Tidskriftsartikel (refereegranskat)abstract
- Reliable calculations of defect properties may be obtained with density functional theory (DFT) using the supercell approximation. We systematically review the known sources of error and suggest how to perform calculations of defect properties in order to minimize errors. We argue that any analytical error-correction scheme relying on electrostatic considerations alone is not appropriate to derive reliable defect formation energies, certainly not for relaxed geometries. Instead we propose finite size scaling of the calculated defect formation energies, and compare the application of this with both fully converged and 'Gamma' (Gamma) point only k-point integration. We provide a recipe for practical DFT calculations which will help to obtain reliable defect formation energies and demonstrate it using examples from III-V semiconductors.
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| 10. |
- Castleton, C. W. M., et al.
(författare)
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Hydrogen on III-V (110) surfaces : Charge accumulation and STM signatures
- 2013
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 88:4, s. 045319-
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Tidskriftsartikel (refereegranskat)abstract
- The behavior of hydrogen on the 110 surfaces of III-V semiconductors is examined using ab initio density functional theory. It is confirmed that adsorbed hydrogen should lead to a charge accumulation layer in the case of InAs, but shown here that it should not do so for other related III-V semiconductors. It is shown that the hydrogen levels due to surface adsorbed hydrogen behave in a material dependent manner related to the ionicity of the material, and hence do not line up in the universal manner reported by others for hydrogen in the bulk of semiconductors and insulators. This fact, combined with the unusually deep Gamma point conduction band well of InAs, accounts for the occurrence of an accumulation layer on InAs(110) but not elsewhere. Furthermore, it is shown that adsorbed hydrogen should be extremely hard to distinguish from native defects (particularly vacancies) using scanning tunneling and atomic force microscopy, on both InAs(110) and other III-V (110) surfaces.
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