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Sökning: WFRF:(Rault Julien E.)

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1.
  • Kramer, K. P., et al. (författare)
  • Revealing the Orbital Composition of Heavy Fermion Quasiparticles in CeRu 2 Si 2
  • 2023
  • Ingår i: Journal of the Physical Society of Japan. - 1347-4073 .- 0031-9015. ; 92:10
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a resonant angle-resolved photoemission spectroscopy (ARPES) study of the electronic band structure and heavy fermion quasiparticles in CeRu2Si2. Using light polarization analysis, considerations of the crystal field environment and hybridization between conduction and f electronic states, we identify the d-electronic orbital character of conduction bands crossing the Fermi level. Resonant ARPES spectra suggest that the localized Ce f states hybridize with eg and t2g states around the zone center. In this fashion, we reveal the orbital structure of the heavy fermion quasiparticles in CeRu2Si2 and discuss its implications for metamagnetism and superconductivity in the related compound CeCu2Si2
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2.
  • Marinova, Maya, et al. (författare)
  • Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator
  • 2015
  • Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 15:4, s. 2533-2541
  • Tidskriftsartikel (refereegranskat)abstract
    • The electric field control of functional properties is a crucial goal in oxide-based electronics. Nonvolatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here, we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
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