| 1. |
- A Atlasov, Kirill, et al.
(author)
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1D photonic band formation and photon localization in finite-size photonic-crystal waveguides
- 2010
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In: OPTICS EXPRESS. - 1094-4087. ; 18:1, s. 117-122
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Journal article (peer-reviewed)abstract
- A transition from discrete optical modes to 1D photonic bands is experimentally observed and numerically studied in planar photonic-crystal (PhC) L-N microcavities of length N. For increasing N the confined modes progressively acquire a well-defined momentum, eventually reconstructing the band dispersion of the corresponding waveguide. Furthermore, photon localization due to disorder is observed experimentally in the membrane PhCs using spatially resolved photoluminescence spectroscopy. Implications on single-photon sources and transfer lines based on quasi-1D PhC structures are discussed.
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| 2. |
- Atlasov, K. A., et al.
(author)
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Site-controlled quantum-wire and quantum-dot photonic-crystal microcavity lasers
- 2010
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In: Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE. - 9781424452415 ; , s. 149-150
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Conference paper (peer-reviewed)abstract
- Based on site- and energy-controlled quantum wires (QWR) and quantum dots (QD), diverse photonic-crystal microcavity laser systems are proposed and discussed. Results demonstrating QWR lasing, cavity coupling and QD ordered arrays are presented.
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| 3. |
- Atlasow, Kirill A., et al.
(author)
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Photonic-crystal microcavity laser with site-controlled quantum-wire active medium
- 2009
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In: Optics Express. - 1094-4087. ; 17:20, s. 18178-18183
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Journal article (peer-reviewed)abstract
- Site-controlled quantum-wire photonic-crystal microcavity laser is experimentally demonstrated using optical pumping. The single-mode lasing and threshold are established based on the transient laser response, linewidth narrowing, and the details of the non-linear power input-output charateristics. Average-power threshold as low as ~240 nW (absorbed power) and spontaneous emission coupling coefficient β~0.3 are derived.
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| 4. |
- Sagalowicz, Laurent, et al.
(author)
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Structure of the wafer fused InP (001)-GaAs (001) interface
- 1997
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In: Philosophical Magazine Letters. - : Informa UK Limited. - 0950-0839 .- 1362-3036. ; 76:6, s. 445-452
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Journal article (peer-reviewed)abstract
- A structural study of wafer fused InP-GaAs interfaces has been carried out. The geometry of the dislocation network which accommodates the twist and the lattice mismatch is first given using a geometrical approach. Cross-sectional transmission electron microscopy and plan view observations are presented. Two different misfit cases are observed. (1) When no twist is present, the 3.7% lattice mismatch is relaxed by a regular square network of dislocations with pure edge character. (2) When an additional twist is present, a square network of dislocations results as well but here the dislocations have a mixed character; 60° dislocations are also observed, some form closed defect circuits and others very likely accommodate a small tilt. The interaction between the 60° dislocations and the edge dislocations is explained in detail. Voids or inclusions are also observed as well as additional dislocations which may accommodate part of the thermal mismatch. © 1997 Taylor & Francis Ltd.
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| 5. |
- Zhu, Qing, et al.
(author)
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Hybridization of Electron and Hole States in Semiconductor Quantum-Dot Molecules
- 2009
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In: Small. - : Wiley. - 1613-6810 .- 1613-6829. ; 5:3, s. 329-335
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Journal article (peer-reviewed)abstract
- A novel QD-molecule system is realized using metal–organic vapor-phase epitaxy growth. The dots are tunnel coupled via connected quantum wires (QWRs). The stronger tunnel coupling in this integrated QD-QWR system allows the hybridization of both electron and hole states, yielding direct-real-space excitonic molecules (see image). The structure holds promise for nanophotonic devices for quantum-information-processing applications.
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