| 1. |
- Momozawa, Y, et al.
(författare)
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IBD risk loci are enriched in multigenic regulatory modules encompassing putative causative genes
- 2018
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Ingår i: Nature communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 9:1, s. 2427-
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Tidskriftsartikel (refereegranskat)abstract
- GWAS have identified >200 risk loci for Inflammatory Bowel Disease (IBD). The majority of disease associations are known to be driven by regulatory variants. To identify the putative causative genes that are perturbed by these variants, we generate a large transcriptome data set (nine disease-relevant cell types) and identify 23,650 cis-eQTL. We show that these are determined by ∼9720 regulatory modules, of which ∼3000 operate in multiple tissues and ∼970 on multiple genes. We identify regulatory modules that drive the disease association for 63 of the 200 risk loci, and show that these are enriched in multigenic modules. Based on these analyses, we resequence 45 of the corresponding 100 candidate genes in 6600 Crohn disease (CD) cases and 5500 controls, and show with burden tests that they include likely causative genes. Our analyses indicate that ≥10-fold larger sample sizes will be required to demonstrate the causality of individual genes using this approach.
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| 2. |
- Darakchieva, Vanya, et al.
(författare)
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Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)
- 2013
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:21, s. 213116-
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Tidskriftsartikel (refereegranskat)abstract
- Microfocal spectroscopic ellipsometry mapping of the electronic properties and thickness of epitaxial graphene grown by high-temperature sublimation on 3C-SiC (111) substrates is reported. Growth of one monolayer graphene is demonstrated on both Si- and C-polarity of the 3C-SiC substrates and it is shown that large area homogeneous single monolayer graphene can be achieved on the Si-face substrates. Correlations between the number of graphene monolayers on one hand and the main transition associated with an exciton enhanced van Hove singularity at ∼4.5 eV and the free-charge carrier scattering time, on the other are established. It is shown that the interface structure on the Si- and C-polarity of the 3C-SiC(111) differs and has a determining role for the thickness and electronic properties homogeneity of the epitaxial graphene.
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| 3. |
- Vasiliauskas, Remigijus, et al.
(författare)
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Effect of initial substrate conditions on growth of cubic silicon carbide
- 2011
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Ingår i: Journal of Crystal Growth. - : Elsevier Science B.V., Amsterdam.. - 0022-0248 .- 1873-5002. ; 324:1, s. 7-14
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Tidskriftsartikel (refereegranskat)abstract
- In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H-SiC substrate preparations were used: (i) as-received, (ii) re-polished, (iii) annealed and covered by silicon layer and (iv) with (1 1 1) 3C-SiC buffer layer. Almost 100% coverage and low twin density was achieved when grown on the buffer layer. The XRD and TEM characterizations show better material quality when the layer is grown directly on 6H-SiC substrates. Background doping evaluated by LTPL is in the range of 10(16) cm(-3) for N and 10(16) cm(-3) for Al in all grown layers.
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| 4. |
- Vasiliauskas, Remigijus, et al.
(författare)
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Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
- 2014
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 395, s. 109-115
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Tidskriftsartikel (refereegranskat)abstract
- The 3C-SiC (111) was grown on on-axis 6H-SiC substrates in a temperature interval ranging from 1675oC where 3C-SiC nucleated, to 1825oC where coverage of the substrate by 3C-SiC was nearly 100%. The 6H- to 3C-SiC transformation was not abrupt and two different transitions could be observed. The first one occurs before or during 3C-SiC nucleation and consists of 6H-, 3C-, 15R-SiC and other unresolved stacking sequences. The second one appears due to 6H-SiC and 3C-SiC competition during the growth and results in non flat needle-like interface. A proposed model elucidates connection between four-fold twins nucleating at the 6H-/3C-SiC interface and the formation of depressions at the surface of the 3C-SiC layer.
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| 5. |
- Vasiliauskas, Remigijus, et al.
(författare)
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Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
- 2010
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Ingår i: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 175-178
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Konferensbidrag (refereegranskat)abstract
- Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.
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