| 1. |
- Faraz, Sadia, et al.
(author)
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Effect of annealing atmosphere on the diode behaviourof zno/si heterojunction
- 2021
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In: Elektronika ir Elektrotechnika. - : Kauno Technologijos Universitetas. - 1392-1215 .- 2029-5731. ; 27:4, s. 49-54
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Journal article (peer-reviewed)abstract
- The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.
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| 2. |
- Faraz, S. M., et al.
(author)
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Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
- 2021
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In: Open Physics. - : De Gruyter Open Ltd. - 2391-5471. ; 19:1, s. 467-476
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Journal article (peer-reviewed)abstract
- The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characterization of the ZnO/Si heterojunction diode is done by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. The barrier height (ϕB), ideality factor (n), doping concentration and density of interface states (NSS) are extracted. All HJDs exhibited a nonlinear behavior with rectification factors of 23, 1,596 and 309 at ±5 V for the as-grown, 400 and 600°C-annealed nanorod HJDs, respectively. Barrier heights of 0.81 and 0.63 V are obtained for HJDs of 400 and 600°C-annealed nanorods, respectively. The energy distribution of the interface state density has been investigated and found to be in the range 0.70 × 1010 to 1.05 × 1012 eV/cm2 below the conduction band from EC = 0.03 to EC = 0.58 eV. The highest density of interface states is observed in HJDs of 600°C-annealed nanorods. Overall improved behavior is observed for the heterojunctions diodes of 400°C-annealed ZnO nanorods. © 2021 Sadia Muniza Faraz et al.
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| 3. |
- Haque, Muhammad Fahim Ul
(author)
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Pulse-Width Modulated RF Transmitters
- 2017
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Doctoral thesis (other academic/artistic)abstract
- The market for wireless portable devices has grown signicantly over the recent years.Wireless devices with ever-increased functionality require high rate data transmissionand reduced costs. High data rate is achieved through communication standards such asLTE and WLAN, which generate signals with high peak-to-average-power ratio (PAPR),hence requiring a power amplier (PA) that can handle a large dynamic range signal. Tokeep the costs low, modern CMOS processes allow the integration of the digital, analogand radio functions on to a single chip. However, the design of PAs with large dynamicrange and high eciency is challenging due to the low voltage headroom.To prolong the battery life, the PAs have to be power-ecient as they consume a sizablepercentage of the total power. For LTE and WLAN, traditional transmitters operatethe PA at back-o power, below their peak efficiency, whereas pulse-width modulation(PWM) transmitters use the PA at their peak power, resulting in a higher efficiency.PWM transmitters can use both linear and SMPAs where the latter are more power efficient and easy to implement in nanometer CMOS. The PWM transmitters have a higher efficiency but suffer from image and aliasing distortion, resulting in a lower dynamic range,amplitude and phase resolution.This thesis studies several new transmitter architectures to improve the dynamicrange, amplitude and phase resolution of PWM transmitters with relaxed filtering requirements.The architectures are suited for fully integrated CMOS solutions, in particular forportable applications.The first transmitter (MAF-PWMT) eliminates aliasing and image distortions whileallowing the use of SMPAs by combining RF-PWM and band-limited PWM. The transmittercan be implemented using all-digital techniques and exhibits an improved linearity and spectral performance. The approach is validated using a Class-D PA based transmitter where an improvement of 10.2 dB in the dynamic range compared to a PWM transmitter for a 1.4 MHz of LTE signal is achieved.The second transmitter (AC-PWMT) compensates for aliasing distortion by combining PWM and outphasing. It can be used with switch-mode PAs (SMPAs) or linear PAs at peak power. The proposed transmitter shows better linearity, improved spectral performanceand increased dynamic range as it does not suffer from AM-AM distortion of the PAs and aliasing distortion due to digital PWM. The idea is validated using push-pull PAs and the proposed transmitter shows an improvement of 9 dB in the dynamic rangeas compared to a PWM transmitter using digital pulse-width modulation for a 1.4 MHzLTE signal.The third transmitter (MD-PWMT) is an all-digital implementation of the second transmitter. The PWM is implemented using a Field Programmable Gate Array(FPGA) core, and outphasing is implemented as pulse-position modulation using FPGA transceivers, which drive two class-D PAs. The digital implementation offers the exibility to adapt the transmitter for multi-standard and multi-band signals. From the measurement results, an improvement of 5 dB in the dynamic range is observed as compared to an all-digital PWM transmitter for a 1.4 MHz LTE signal.The fourth transmitter (EP-PWMT) improves the phase linearity of an all-digital PWM transmitter using PWM and asymmetric outphasing. The transmitter uses PWM to encode the amplitude, and outphasing for enhanced phase control thus doubling the phase resolution. The measurement setup uses Class-D PAs to amplify a 1.4 MHz LTEup-link signal. An improvement of 2.8 dB in the adjacent channel leakage ratio is observed whereas the EVM is reduced by 3.3 % as compared to an all-digital PWM transmitter.The fifth transmitter (CRF-ML-PWMT) combines multilevel and RF-PWM, whereas the sixth transmitter (CRF-MP-PMWT) combines multiphase PWM and RF-PWM. Both transmitters have smaller chip area as compared to the conventional multiphase and multilevel PWM transmitters, as a combiner is not required. The proposed transmitters also show better dynamic range and improved amplitude resolution as compared to conventional RF-PWM transmitters.The solutions presented in this thesis aims to enhance the performance and simplify the digital implementation of PWM-based RF transmitters.
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| 4. |
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| 5. |
- Ahuja, Rajeev, et al.
(author)
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Optical properties of 4H-SiC
- 2002
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:4, s. 2099-2103
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Journal article (peer-reviewed)abstract
- The optical band gap energy and the dielectric functions of n-type 4H-SiC have been investigated experimentally by transmission spectroscopy and spectroscopic ellipsometry and theoretically by an ab initio full-potential linear muffin-tin-orbital method. We present the real and imaginary parts of the dielectric functions, resolved into the transverse and longitudinal photon moment a, and we show that the anisotropy is small in 4H-SiC. The measurements and the calculations fall closely together in a wide range of energies.
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| 6. |
- Arshad, Sana, et al.
(author)
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50-830 MHz noise and distortion canceling CMOS low noise amplifier
- 2018
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In: Integration. - : Elsevier. - 0167-9260 .- 1872-7522. ; 60, s. 63-73
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Journal article (peer-reviewed)abstract
- In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced by the main stage. The proposed topology has a bandwidth similar to a resistive shunt feedback LNA, but with a superior noise figure (NF) and linearity. The proposed wideband LNA is fabricated in 130 nm CMOS technology and occupies an area of 0.5 mm(2). Measured results depict 3-dB bandwidth from 50 to 830 MHz. The measured gain and NF at 420 MHz are 17 dB and 2.2 dB, respectively. The high value of the 1/f noise is one of the key problems in low frequency CMOS designs. The proposed topology also addresses this challenge and a low NF is attained at low frequencies. Measured 811 and S22 are better than -8.9 dB and -8.5 dB, respectively within the 0.05-1 GHz band. The 1-dB compression point is -11.5 dBm at 700 MHz, while the IIP3 is -6.3 dBm. The forward core consumes 14 mW from a 1.8 V supply. This LNA is suitable for VHF and UHF SDR communication receivers.
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| 7. |
- Arshad, Sana, et al.
(author)
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Highly Linear Inductively Degenerated 0.13 mu m CMOS LNA using FDC Technique
- 2014
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In: 2014 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS). - : IEEE. - 9781479952304 ; , s. 225-228
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Conference paper (peer-reviewed)abstract
- In this paper, a highly linear, inductively degenerated, common source narrowband LNA is presented. An extremely simple feed-forward distortion circuit (FDC) which consists of an appropriately sized ac-coupled diode connected NMOS is proposed. This circuit generates distortion components at output, when added at the input node as a feed forward element (M-6). These distortion components partially cancel the 3rd order nonlinearity of the cascode pair (M-2 and M-3), thus improving the overall linearity of LNA. The prototype is manufactured in standard 0.13 mu m CMOS process from IBM. Simulation and partial measurement results show the S11 and S22 to be -19.27dB and -7.14dB respectively at 2.45GHz. The simulation results of the LNA demonstrate a power gain of 18.5dB, NF of 4.38dB, input referred 1dBCP of -11.76dBm and IIP3 of +0.7dBm consuming 27.7mA from 1.0V power supply. The proposed LNA achieves the best input referred IIP3 reported in recent literature using 0.13 mu m CMOS in 2.4GHz frequency band.
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| 8. |
- Asghar, M., et al.
(author)
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Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy
- 2007
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 101:7
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Journal article (peer-reviewed)abstract
- Characterization of dominant electron trap in as-grown SiC epilayers has been carried out using deep level transient spectroscopy. Two electron traps E1 and Z1 at Ec-0.21 and Ec-0.61 are observed, respectively, Z1 being the dominant level. Line shape fitting, capture cross section, and insensitivity with doping concentration have revealed interesting features of Z1 center. Spatial distribution discloses that the level is generated in the vicinity of epilayers/substrate interface and the rest of the overgrown layers is defect-free. Owing to the Si-rich growth conditions, the depth profile of Z1 relates it to carbon vacancy. The alpha particle irradiation transforms Z1 level into Z 1/Z2 center involving silicon and carbon vacancies. Isochronal annealing study further strengthens the proposed origin of the debated level. © 2007 American Institute of Physics.
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| 9. |
- Ashraf, H., et al.
(author)
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Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
- 2010
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In: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 108:10
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Journal article (peer-reviewed)abstract
- Electric field-enhanced emission of electrons from a deep level defect in GaN grown by hydride vapor phase epitaxy has been studied. Using the field dependent mode of conventional deep level transient spectroscopy (DLTS), several frequency scans were performed keeping applied electric field (12.8-31.4 MV/m) and sample temperature (300-360 K) constant. Arrhenius plots of the resultant data yielded an activation energy of the electron trap E ranging from E-c -0.48 +/- 0.02 eV to E-c-0.35 +/- 0.02 eV, respectively. The extrapolation of the as-measured field dependent data (activation energy) revealed the zero-field emission energy (pure thermal activation energy) of the trap to be 0.55 +/- 0.02 eV. Various theoretical models were applied to justify the field-enhanced emission of the carriers from the trap. Eventually it was found that the Poole-Frenkel model associated with a square well potential of radius r=4.8 nm was consistent with the experimental data, and, as a result, the trap is attributed to a charged impurity. Earlier, qualitative measurements like current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed, and screening parameters of the device were extracted to ascertain the reliability of DLTS data.
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| 10. |
- Azam, Sher, et al.
(author)
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Comparison of Two GaN Transistor Technologies in Broadband Power Amplifiers
- 2010
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In: MICROWAVE JOURNAL. - : Horizon House Publications, Inc.. - 0192-6225. ; 53:4, s. 184-192
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Journal article (peer-reviewed)abstract
- This article compares the performance of two different GaN transistor technologies, GaN HEMT on silicon substrate (PA1) and GaN on SiC (PA2), utilized in two broadband power amplifiers operating at 0.7 to 1.8 GHz. The study explores the broadband power amplifier potential of both GaN HEMT technologies for phased-array radar (PAR) and electronic warfare (EW) systems. The measured maximum output power for PA1 is 42.5 dBm (18 W) with a maximum PAE of 66 percent and a gain of 19.5 dB. The measured maximum output power for PA2 is 40 dBm with a PAE of 37 percent and a power gain slightly above 10 dB. The high power gain, ME, wider bandwidth and unconditional stability was obtained without feedback for the amplifier based on GaN HEMT technology, fabricated on Si substrate.
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