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Sökning: WFRF:(Westlinder J)

  • Resultat 1-8 av 8
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1.
  • Sudireddy, B. R., et al. (författare)
  • Development of Robust Metal-Supported SOFCs and Stack Components in EU METSAPP Consortium
  • 2017
  • Ingår i: Fuel Cells. - : Wiley. - 1615-6846 .- 1615-6854. ; 17:4, s. 508-516
  • Tidskriftsartikel (refereegranskat)abstract
    • The potential of MS-SOFCs was demonstrated through the previous EU METSOFC project, which concluded that the development of oxidation resistant novel metal-supported solid oxide fule cell (MS-SOFC) design and stack is the requirement to advance this technology to the next level. The following EU METSAPP project has been executed with an overall aim of developing advanced metal-supported cells and stacks based on a robust, reliable and up-scalable technology. During the project, oxidation resistant nanostructured anodes based on modified SrTiO3 were developed and integrated into MS-SOFCs to enhance their robustness. In addition, the manufacturing of metal-supported cells with different geometries, scalability of the manufacturing process was demonstrated and more than 200 cells with an area of approximate to 150 cm(2) were produced. The electrochemical performance of different cell generations was evaluated and best performance and stability combination was observed with doped SrTiO3 based anode designs. Furthermore, numerical models to understand the corrosion behavior of the MS-SOFCs were developed and validated. Finally, the cost effective concept of coated metal interconnects was developed, which resulted in 90% reduction in Cr evaporation, three times lower Cr2O3 scale thickness and increased lifetime. The possibility of assembling these cells into two radically different stack designs was demonstrated.
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2.
  • von Haartman, Martin, et al. (författare)
  • Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics
  • 2005
  • Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 49:6, s. 907-914
  • Tidskriftsartikel (refereegranskat)abstract
    • Carrier mobility and low-frequency noise were investigated in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics. The devices were annealed in H2O Vapor, which reduced the negative charge in the gate dielectrics. The carrier mobility was characterized versus change in oxide charge, which allowed an estimation of the Coulomb scattering from the charge in the Al2O3. The low-frequency noise was measured between subthreshold and strong inversion conditions in the H2O annealed and the un-annealed devices. The combined number fluctuation and correlated mobility fluctuation noise model could successfully explain the observed 1/f noise. The mobility fluctuations were negatively correlated to the number fluctuations in the un-annealed devices, which contained a negative oxide charge. In the H2O annealed devices, on the other hand, a positive correlation could be observed. The maximum magnitude of the scattering parameter a was found to be around 1 X 10(4) Vs/C. The H2O annealing was used in this work as a non-destructive tool to modify the charge in the Al2O3, but it can also be a viable method to improve device performance by introducing/passivating charge.
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3.
  • Froitzheim, Jan, 1981, et al. (författare)
  • Nano coated interconnects for SOFC (NaCoSOFC)
  • 2013
  • Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; 57:1, s. 2187-2193
  • Konferensbidrag (refereegranskat)abstract
    • The NaCoSOFC project is focused on the development of nano coatings for SOFC interconnects. The project is sponsored by the Nordic Top Level Research Initiative and has four project partners: Sandvik Materials Technology which is producing coated interconnects, Chalmers University of Technology and the University of Oslo that characterize samples with respect to e.g. corrosion, Cr evaporation and ASR as well as Topsoe Fuel Cell that is testing the developed interconnects in its stacks. The developed coatings are based on a combination of Co with RE elements and exhibit high corrosion resistance, 10 fold decrease in Cr evaporation and ASR values that are approximately 50% of the uncoated material.
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4.
  • Goebel, Claudia, 1988, et al. (författare)
  • Long-term (4 year) degradation behavior of coated stainless steel 441 used for solid oxide fuel cell interconnect applications
  • 2020
  • Ingår i: Journal of Power Sources. - : Elsevier BV. - 0378-7753. ; 449
  • Tidskriftsartikel (refereegranskat)abstract
    • The present work aims to investigate the long-term stability of Ce/Co coated AISI 441 used as an interconnect material in solid oxide fuel cells (SOFC). Being a commercially available alloy the use of AISI 441 would greatly reduce the cost of SOFCs in comparison to tailor-made interconnect materials such as Crofer 22 APU. To analyze the long-term stability Ce/Co coated AISI 441 is exposed in air at 800 °C for up to 38 000 h. Mass gain values are recorded continuously. After 7 000, 23 000, and 35 000 h area specific resistance (ASR) measurements are performed, and cross-sections are prepared and analyzed using scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) spectroscopy. Cr-evaporation measurements are conducted on samples exposed for up to 38 000 h.
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5.
  • Goebel, Claudia, 1988, et al. (författare)
  • Long term (4 years) performance of Co/Ce coated 441 for SOFC interconnect applications
  • 2017
  • Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; 78:1, s. 1675-1679
  • Konferensbidrag (refereegranskat)abstract
    • Co/Ce coated 441 samples were exposed at 800°C in laboratory air for up to 37 000 h and subsequently characterized using different techniques. Mass gain data of all samples were recorded throughout exposure. Cr-evaporation measurements were conducted and compared with unexposed Co/Ce coated AISI 441 as well as unexposed and uncoated AISI 441. Furthermore SEM analysis on BIB cross-sections was performed on 7 000 h, 23 000 h and 35 000 h exposed Co/Ce coated 441.
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6.
  • Liu, Fang, 1975, et al. (författare)
  • Cyclic oxidation of two FeCrAlRE foils at 1100 oC - The influence of the concentration of minor alloying elements on scale microstructure
  • 2008
  • Ingår i: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 595-598, s. 707-716
  • Konferensbidrag (refereegranskat)abstract
    • Two FeCrAlRE alloys, a commercial, 0C404, and a model alloy in the form of thin foils,with different Mn, Nb, Mo and Ti concentrations were subjected to cyclic oxidation in lab air at1100°C. The oxidized samples were studied by gravimetry, Grazing-Incidence X-ray Diffraction(GI-XRD), Scanning Transmission Electron Microscopy (STEM), and Energy Dispersive X-ray(EDX) analysis. The two FeCrAl alloys exhibit different oxidation kinetics; however, both alloyshave the same weight gain after 500 hours exposure. During the early stages the scale consistsmainly of α-Al2O3 together with some oxide particles containing Mn, Al, Fe and Cr formed on thealloys. After 500 hours the 0C404 scale locally also consists of larger polycrystalline regions ofMn-Cr-Al spinel. In addition, Si-rich oxide, chromia and Al-Cr oxide could be observed at themetal/oxide interface.
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7.
  • Platzer-Bjorkman, Charlotte, et al. (författare)
  • Diffusion of Fe and Na in co-evaporated Cu(In, Ga) Se-2 devices on steel substrates
  • 2013
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 535, s. 188-192
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work we study impurity diffusion into Cu(In, Ga) Se-2 from stainless steel substrates with and without Cr diffusion barriers using secondary ion mass spectrometry. For these substrate configurations we compare cases with and without adding NaF as a sodium precursor. A clear increase in impurity diffusion from the substrate is observed for samples with NaF. Devices made using our micro pilot line show the expected correlation between Fe content, Na content and efficiency, but the highest device efficiency obtained for steel substrates is still slightly below that of the glass substrate reference. We discuss reasons for the observed device performance.
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  • Resultat 1-8 av 8

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