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Sökning: WFRF:(Westlinder Jörgen)

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  • Forsgren, Katarina, et al. (författare)
  • Deposition of HfO2 thin films in HfI4-based processes
  • 2002
  • Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 149:10, s. F139-F144
  • Tidskriftsartikel (refereegranskat)abstract
    • This study describes deposition of HfO2 thin films by chemical vapor deposition (CVD) and atomic layer deposition (ALD) using HfI4 as the metal precursor. The layer-by-layer growth was also studied in real time with a quartz crystal microbalance. In ALD, the deposition rate was independent of the growth temperature, whereas in CVD, an exponential rate increase was observed. Monoclinic HfO2 was deposited on MgO and poly-Si substrates in a wide temperature range, and the choice of substrate had a strong influence on the orientation of the films. Epitaxial growth of HfO2 was observed on MgO(001) substrates at 400-500°C in the ALD process and at 500-600°C in the CVD process. The electrical characterization showed that the crystallinity of the films had a stronger influence on the dielectric constant than did the film thickness.
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  • Forsgren, Katarina, et al. (författare)
  • Iodide-Based Atomic Layer Deposition of ZrO2 : Aspects of Phase Stability and Dielectric Properties
  • 2002
  • Ingår i: Chemical Vapor Deposition. - 0948-1907 .- 1521-3862. ; 8:3, s. 105-109
  • Tidskriftsartikel (refereegranskat)abstract
    • This study is an investigation into the influence of temperature, substrate, and thickness on the properties of ZrO2 thin films grown by atomic layer deposition (ALD). ZrI4 and H2O2 were used as source materials, and films deposited at temperatures between 250 °C and 500 °C consisted of mixed tetragonal and monoclinic ZrO2. The phase content and electrical properties of films of 3–30 nm thickness were studied for different temperatures and substrates. The films crystallized at smaller thicknesses on the Pt/Ti/SiO2/Si (denoted Pt in the following text) substrate than on polycrystalline Si (poly-Si) and MgO(001). It was also found that the film thickness had a stronger effect on the dielectric constant than either the growth temperature or the substrate.
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  • Resultat 1-10 av 28

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