Theoretical investigation of energy shifts at the GaAs/Au interface

• We have used an image screening model to calculate the shift of the Ga(3d−1) core-level distribution when a GaAs surface is covered with metal. Using the GaAs bulk dielectric constant we find a shift of 0.1 (0.18) eV with a mean free path of 25 (8) Å. These shifts are comparable to the measured ones,1 indicating that final-state (image) screening represents an important part of core-level shifts in the vicinity of the interface.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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