| 1. |
- Bruzzi, M, et al.
(författare)
-
Radiation-hard semiconductor detectors for SuperLHC
- 2005
-
Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
-
Tidskriftsartikel (refereegranskat)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
|
|
| 2. |
- Adey, J., et al.
(författare)
-
Theory of boron-vacancy complexes in silicon
- 2005
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:16, s. 165211-
-
Tidskriftsartikel (refereegranskat)abstract
- The substitutional boron-vacancy BsV complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the experimentally reported, well established metastability of the boron-related defect observed in p-type silicon irradiated at low temperature and of the two hole transitions that are observed to be associated with one of the configurations of the metastable defect. BsV is found to have several stable configurations, depending on charge state. In the positive charge state the second nearest neighbor configuration with C1 symmetry is almost degenerate with the second nearest neighbor configuration that has C1h symmetry since the bond reconstruction is weakened by the removal of electrons from the center. A third nearest neighbor configuration of BsV has the lowest energy in the negative charge state. An assignment of the three energy levels associated with BsV is made. The experimentally observed Ev+0.31 eV and Ev+0.37 eV levels are related to the donor levels of second nearest neighbor BsV with C1 and C1h symmetry respectively. The observed Ev+0.11 eV level is assigned to the vertical donor level of the third nearest neighbor configuration. The boron-divacancy complex BsV2 is also studied and is found to be stable with a binding energy between V2 and Bs of around 0.2 eV. Its energy levels lie close to those of the V2. However, the defect is likely to be an important defect only in heavily doped material.
|
|
| 3. |
- Larsen, A. Nylandsted, et al.
(författare)
-
E center in silicon has a donor level in the band gap
- 2006
-
Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 97:10, s. 106402/1-106402/4
-
Tidskriftsartikel (refereegranskat)abstract
- It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity-vacancy pair)-one of the most studied defects in semiconductors-has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.
|
|
| 4. |
- Poulton, Alex J., et al.
(författare)
-
Phytoplankton carbon fixation, chlorophyll-biomass and diagnostic pigments in the Atlantic Ocean
- 2006
-
Ingår i: Deep-sea research. Part II, Topical studies in oceanography. - : Elsevier BV. - 0967-0645 .- 1879-0100. ; 53:14-16, s. 1593-1610
-
Tidskriftsartikel (refereegranskat)abstract
- We have made daily measurements of phytoplankton pigments, size-fractionated (< 2 and > 2-mu m) carbon fixation and chlorophyll-a concentration during four Atlantic Meridional Transect (AMT) cruises in 2003-04. Surface rates of carbon fixation ranged from < 0.2-mmol C m(-3) d(-1) in the subtropical gyres to 0.2-0.5-mmol C m(-3) d(-1) in the tropical equatorial Atlantic. Significant intercruise variability was restricted to the subtropical gyres, with higher chlorophyll-a concentrations and carbon fixation in the subsurface chlorophyll maximum during spring in either hemisphere. In surface waters, although picoplankton (<-mu m) represented the dominant fraction in terms of both carbon fixation (50-70%) and chlorophyll-alpha (80-90%), nanoplankton (> 2-mu m) contributions to total carbon fixation (30-50%) were higher than to total chlorophyll-alpha (10-20%). However, in the subsurface chlorophyll maximum picoplankton dominated both carbon fixation (70-90%) and chlorophyll-alpha (70-90%). Thus, in surface waters chlorophyll-normalised carbon fixation was 2-3 times higher for nanoplankton and differences in picoplankton and nanoplankton carbon to chlorophyll-alpha ratios may lead to either higher or similar growth rates. These low chlorophyll-normalised carbon fixation rates for picoplankton may also reflect losses of fixed carbon (cell leakage or respiration), decreases in photosynthetic efficiency, grazing losses during the incubations, or some combination of all these. Comparison of nitrate concentrations in the subsurface chlorophyll maximum with estimates of those required to support the observed rates of carbon fixation (assuming Redfield stoichiometry) indicate that primary production in the chlorophyll maximum may be light rather than nutrient limited.
|
|
