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Sökning: WFRF:(Alekseev G. D.) > (2020-2023)

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2.
  • Alekseev, A. Yu, et al. (författare)
  • Curvature-induced effects in semiconducting alkaline-earth metal silicide nanotubes
  • 2021
  • Ingår i: Physica. E, Low-Dimensional systems and nanostructures. - : Elsevier BV. - 1386-9477 .- 1873-1759. ; 128
  • Tidskriftsartikel (refereegranskat)abstract
    • By means of ab-initio techniques we have investigated changes in the structure and electronic properties of alkaline-earth metal silicide (Ca2Si, Mg2Si and MgCaSi) nanotubes caused by the curvature-induced effects. It is revealed that the curvature-induced effects can: 1) stabilize Mg2Si nanotubes in a phase, which is metastable for the parent 2D Mg2Si; 2) lead to an energy gain as a result of 2D to nanotube structural transformation in the case of ternary MgCaSi nanotubes; 3) modify the band dispersion and band gaps for nanotubes with the diameters less than 30 angstrom. In addition, Mg2Si and MgCaSi nanotubes are found to be direct band-gap (0.5-1.2 eV) materials with appreciable oscillator strength of the first direct transitions.
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3.
  • Alekseev, A. Yu, et al. (författare)
  • Interplay between structural changes, surface states and quantum confinement effects in semiconducting Mg2Si and Ca2Si thin films
  • 2023
  • Ingår i: Physical Chemistry, Chemical Physics - PCCP. - : Royal Society of Chemistry (RSC). - 1463-9076 .- 1463-9084. ; 25:29, s. 19952-19962
  • Tidskriftsartikel (refereegranskat)abstract
    • Ab initio techniques have been used to investigate structural changes in semiconducting Mg2Si and Ca2Si thin films (from 17 nm down to 0.2 nm corresponding to the 2D structure) along with band-gap variations due to quantum confinement. Cubic Mg2Si(111) thin films being dynamically stable at thicknesses (d) larger than 0.3 nm displayed an indirect band gap, the reduction of which with increasing d could be reasonably well described by the simple effective mass approximation. Only 2D Mg2Si has a unique structure because of the orthorhombic distortion and the direct band gap. Since the surface energy of cubic Ca2Si(111) films was lower with respect to any surface of the orthorhombic phase, which is the ground state for the Ca2Si bulk, the metastable in-bulk cubic phase in the form of thin films turned out to be preferable in total energy than any orthorhombic Ca2Si thin film for d < 3 nm. Sizable structural distortion and the appearance of surface states in the gap region of Ca2Si thin films with d < 3 nm could be the reason for an odd dependence of the band-gap variation on d.
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