| 1. |
- Thinh, N. Q., et al.
(författare)
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Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 70:12, s. 121201-
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Tidskriftsartikel (refereegranskat)abstract
- Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .
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| 2. |
- Izadifard, Morteza, 1965-, et al.
(författare)
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Effects of rapid thermal annealing on optical quality of GaNP alloys
- 2004
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Ingår i: EMRS-2004 Spring Meeting,2004. - : Institution of Engineering and Technology (IET). ; , s. 335-
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Konferensbidrag (refereegranskat)abstract
- Significant improvements in radiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy (MBE) are achieved by post-growth rapid thermal annealing (RTA). From temperature-dependent CW and time-resolved photoluminescence (PL) spectroscopies combined with PL excitation measurements, the observed improvements are attributed to annealing out of competing nonradiative centres. This conclusion is supported by the following experimental evidence: reduced thermal quenching of the PL intensity resulting in a substantial (up to 18 times) increase at room temperature (RT) after RTA, and simultaneous improvements in carrier lifetime at RT deduced from time-resolved PL measurements.
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| 3. |
- Izadifard, Morteza, 1965-, et al.
(författare)
-
Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 6347-
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Tidskriftsartikel (refereegranskat)abstract
- By using a variety of optical characterization techniques, including cathodoluminescence, temperature-dependent cw- and time-resolved photoluminescence (PL), and PL excitation spectroscopies, high optical quality of the GaN0.018P0.982 epilayers lattice matched to Si substrates is demonstrated and is shown to be comparable to that of the “state-of-the-art” GaNP alloys grown on GaP substrates. The growth of GaNP on Si is, however, found to facilitate the formation of several point defects, including complexes involving Ga interstitial atoms (Gai).
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