| 1. |
- Kumari, Sulakshna, et al.
(författare)
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Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications
- 2015
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781628414622 ; 9372, s. Art. no. 93720U-
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Konferensbidrag (refereegranskat)abstract
- We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (
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| 2. |
- Haglund, Erik, 1985, et al.
(författare)
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Demonstration of post-growth wavelength control of VCSELs using high-contrast gratings
- 2015
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Ingår i: HP Laboratories Technical Report. ; 70
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate post-growth wavelength setting of vertical-cavity surface-emitting lasers (VCSELs) using high-contrast gratings (HCGs). By fabricating HCGs with different duty-cycle and period, the HCG reflection phase can be varied, in effect giving different optical cavity lengths for HCGVCSELs with different grating parameters. This enables fabrication of monolithic multi-wavelength HCG-VCSEL arrays for wavelength-division multiplexing (WDM). The GaAs HCG is suspended in air by selective removal of an InGaP sacrificial layer. Electrically injected 980-nm HCGVCSELs with sub-mA threshold currents indicate high reflectivity from the GaAs HCGs. Lasing over a wavelength span of 15 nm was achieved, enabling a 4-channel WDM array with 5 nm channel spacing. Device design, fabrication and experimental proof-of-concept are presented.
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| 3. |
- Haglund, Erik, 1985, et al.
(författare)
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Demonstration of post-growth wavelength setting of VCSELs using high-contrast gratings
- 2016
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Ingår i: Optics Express. - : The Optical Society. - 1094-4087 .- 1094-4087. ; 24:3, s. 1999-2005
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate, for the first time, post-growth wavelength setting of electrically-injected vertical-cavity surface-emitting lasers (VCSELs) by using high-contrast gratings (HCGs) with different grating parameters. By fabricating HCGs with different duty cycle and period, the HCG reflection phase can be varied, in effect giving different optical cavity lengths for HCG-VCSELs with different grating parameters. This enables fabrication of monolithic multi-wavelength HCG-VCSEL arrays for wavelength-division multiplexing (WDM). The GaAs HCG is suspended in air by removing a sacrificial layer of InGaP. Electrically-injected 980-nm HCG-VCSELs with sub-mA threshold currents indicate high reflectivity from the GaAs HCGs. Lasing over a wavelength span of 15 nm was achieved, enabling a 4-channel WDM array with 5 nm channel spacing. A large wavelength setting span was enabled by an air-coupled cavity design and the use of only the HCG as top mirror.
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| 4. |
- Haglund, Erik, 1985, et al.
(författare)
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GaAs High-Contrast Gratings with InGaP Sacrificial Layer for Multi-Wavelength VCSEL Arrays
- 2016
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Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; TuD2, s. Article n0 7765746-
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Konferensbidrag (refereegranskat)abstract
- We report on highly reflective suspended GaAs high-contrast gratings (HCGs) using an InGaP sacrificial layer. A high reflectivity approaching 100% was observed both in direct reflectivity measurement and by low threshold currents in fabricated multi-wavelength HCG-VCSEL arrays.
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| 5. |
- Haglund, Erik, 1985, et al.
(författare)
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Multi-wavelength VCSEL arrays using high-contrast gratings
- 2017
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606678 ; 10113
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Konferensbidrag (refereegranskat)abstract
- The use of a high-contrast grating (HCG) as the top mirror in a vertical-cavity surface-emitting laser (VCSEL) allows for setting the resonance wavelength by the grating parameters in a post-epitaxial growth fabrication process. Using this technique, we demonstrate electrically driven multi-wavelength VCSEL arrays at ∼980 nm wavelength. The VCSELs are GaAs-based and the suspended GaAs HCGs were fabricated using electron-beam lithography, dry etching and selective removal of an InGaP sacrificial layer. The air-coupled cavity design enabled 4-channel arrays with 5 nm wavelength spacing and sub-mA threshold currents thanks to the high HCG reflectance.
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| 6. |
- Haglund, Erik, 1985, et al.
(författare)
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Wavelength Control of VCSELs using High-Contrast Gratings
- 2017
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Ingår i: VII Workshop on Physics and Technology of Semiconductor Lasers.
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Konferensbidrag (refereegranskat)abstract
- The vertical-cavity surface-emitting laser (VCSEL) is a well-established light source for sensing and short-reach optical links. The surface emission allows wafer-scale testing enabling low-cost manufacturing, while the VCSELs’ small modal volume leads to low power consumption, high-speed modulation at small currents, and small footprint [1]. Conventional VCSELs consist of an active region sandwiched between two distributed Bragg reflectors (DBRs). Replacing the top DBR with a high-contrast grating reflector offers unique possibilities to engineer and control VCSEL emission wavelength and modal properties [2,3]. A high-contrast grating (HCG) is typically formed by bars of high refractive index suspended in air. HCGs with certain grating parameters (duty cycle, period, and thickness) can function as ultra-thin reflectors with close to 100% reflectivity [4]. Besides the reflectivity, the grating parameters also influence the reflection phase. This enables fabrication of multi-wavelength VCSEL arrays by fabricating HCG-VCSELs with different grating parameters. In order to utilize the extraordinary properties of the HCG, the VCSEL mode must be sensitive to the HCG, which leads to complicated cavity configurations with coupled cavity effects and low optical confinement. This talk will summarize experimental work performed at Chalmers University of Technology in collaboration with Hewlett Packard Enterprise. The design of HCGs and HCG-VCSELs will be presented as well as experimental results from 980 nm HCG-VCSELs and demonstration of post-growth wavelength setting for wavelength-division multiplexing (WDM) VCSEL arrays [5].References[1]Larsson, “Advances in VCSELs for communication and sensing,” IEEE J. Sel. Top. Quantum Electron. 17(6), 1552-1567 (2011).[2]V. Karagodsky, et al., ”Monolithically integrated multi-wavelength VCSEL arrays using high-contrast gratings”, Opt. Express 18(2), 694-699 (2010).[3]S. Inoue, et al., “Highly angular dependent high-contrast grating mirrors and its application for transverse-mode control of VCSELs”, Jpn. J. Appl. Phys. 53, 090306 (2014).[4]C. J. Chang-Hasnain et al., “High-contrast gratings for integrated optoelectronics”, Adv. Opt. Photon. 4, 379-, (2012).[5]E. Haglund, et al., “Demonstration of post-growth wavelength-setting of VCSELs using high-contrast gratings”, Opt, Express 24(3), 1999-2005 (2016).AcknowledgementThis work was been supported by Hewlett Packard Enterprise (HPE), the Swedish Foundation for Strategic Research (SSF) and the Swedish Research Council (VR). The epitaxial material was provided by IQE Europe.
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| 7. |
- Bergmann, Michael Alexander, 1989, et al.
(författare)
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Electrochemical etching of AlGaN for the realization of thin-film devices
- 2019
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 115:18, s. 182103-
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Tidskriftsartikel (refereegranskat)abstract
- Heterogeneously integrated AlGaN epitaxial layers will be essential for future optical and electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical-cavity surface-emitting lasers, and high-electron mobility transistors on efficient heat sinks. Such AlGaN-membranes will also enable flexible and micromechanical devices. However, to develop a method to separate the AlGaN-device membranes from the substrate has proven to be challenging, in particular, for high-quality device materials, which require the use of a lattice-matched AlGaN sacrificial layer. We demonstrate an electrochemical etching method by which it is possible to achieve complete lateral etching of an AlGaN sacrificial layer with up to 50% Al-content. The influence of etching voltage and the Al-content of the sacrificial layer on the etching process is investigated. The etched N-polar surface shows the same macroscopic topography as that of the as-grown epitaxial structure, and the root-mean square roughness is 3.5 nm for 1 µm x 1 µm scan areas. Separated device layers have a well-defined thickness and smooth etched surfaces. Transferred multi-quantum-well structures were fabricated and investigated by time-resolved photoluminescence measurements. The quantum wells showed no sign of degradation caused by the thin-film process.
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| 8. |
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| 9. |
- Bergmann, Michael Alexander, 1989, et al.
(författare)
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Towards ultraviolet and blue microcavity lasers
- 2018
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Ingår i: Northen Optics and Photonics conference. - 9789163964886 ; 2018
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Konferensbidrag (refereegranskat)abstract
- The development of III-nitride-based (Al,Ga,In(N)) microcavity lasers is a challenging task. Significant progress in recent years has resulted in realizations of electrically pumped devices with optical output power in the mW-range and with threshold current densities below 20 kA/cm2. However, to become practical, the lifetime and power conversion efficiency of these devices must be improved. Among the challenges are achieving transverse optical mode confinement, highreflectivity mirrors and control over the resonator length. We will highlight our theoretical work on transverse optical mode confinement, emphasising the overwhelming risk of ending up with an optically anti-guided cavity, and its consequences such as very high optical losses that easily could double the threshold gain for lasing. We will show some anti-guided cavities with reasonable threshold gain and built-in modal discrimination. However, all anti-guided cavities are very sensitive to temperature effects and small structural changes in the cavity caused by fabrication imperfections. We have explored electrically conductive distributed Bragg reflectors (DBRs) in both AlN/GaN and ZnO/GaN. The AlN/GaN DBRs were grown with different strain-compensating interlayers, and the DBR without interlayers had the lowest vertical resistivity with a specific series resistance of 0.044 cmfor eight DBRpairs. In the ZnO/GaN DBR, the measured resistance was dominated by lateral and contact contributions, setting a lower measurable limit of ~10 for three DBR-pairs. Numerical simulations show the importance of having in-plane strained layers in the ZnO/GaN DBR, since that leads to cancellation of the spontaneous and piezoelectric polarization. This results in a dramatically reduced vertical resistance, potentially three orders of magnitude lower than what could be measured. cm An alternative to an epitaxially grown DBR is a dielectric DBR, which offers high reflectivity over a broader wavelength range, relaxing the requirements on resonator length control. To deposit a dielectric DBR on the bottom side of the cavity, the sample must first be bonded to a carrier wafer before the substrate can be removed. We used thermocompression gold-gold bonding to successfully bond the laser structure to a Si carrier wafer. The subsequent substrate removal is a challenging process due to the chemical inertness of the III-nitride-based materials. A doping-dependent electrochemical etch technique was used, which allows for the selective removal of a sacrificial (n-doped) layer between the cavity and the substrate. This resulted in nm-precise cavity lift-off with a low root-mean-square surface roughness down to 0.3 nm. Thus, the process is suitable for the fabrication of high-quality optical devices such as microcavity lasers. In addition, the technique offers a new alternative to create III-nitridebased optical resonators, mechanical resonators, thin film LEDs and transistors.
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| 10. |
- Chang, Tsu-Chi, 1990, et al.
(författare)
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GaN vertical-cavity surface-emitting laser with a high-contrast grating reflector
- 2018
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 10542
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Konferensbidrag (refereegranskat)abstract
- We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.69MW/cm2 and a lasing wavelength at 369.1 nm. This first demonstration of lasing in a HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.
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