| 1. |
- L'Huillier, Anne, et al.
(författare)
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High-order Harmonic-generation Cutoff
- 1993
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Ingår i: Physical Review A (Atomic, Molecular and Optical Physics). - 1050-2947. ; 48:5
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Tidskriftsartikel (refereegranskat)abstract
- We have experimentally determined the harmonic-generation cutoff as a function of the laser intensity in neon using an intense, short-pulse Ti:sapphire laser. The experimental cutoff is lower than that obtained in single-atom calculations. Using a simple quantum-mechanical approach to harmonic generation valid at high intensity, we show that the difference is due to the effect of propagation.
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| 2. |
- Sjöström, H, et al.
(författare)
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Reactive magnetron sputter deposition of CNx films on Si(001) substrates : film growth, microstructure and mechanical properties
- 1994
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 246:1-2, s. 103-109
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Tidskriftsartikel (refereegranskat)abstract
- There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron microscopy (TEM). Auger electron spectroscopy, Rutherford backscattering and nano-indentation tests. Typically the films were grown at rates of 5 nm s-1 to total thicknesses of 300 nm. Owing to an extensive re-sputtering, only low negative bias voltages (-80
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| 3. |
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| 4. |
- Yi, H R, et al.
(författare)
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Improved step edges on LaAlO3 substrates by using amorphous carbon etch masks
- 1994
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 65, s. 1177-1179
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Tidskriftsartikel (refereegranskat)abstract
- We report a technique for the fabrication of sharp and straight step edges on LaAlO3 (LAO) substrates by ion milling. An electron beam lithography defined amorphous carbon film was used as an etch mask. It had very low ion milling rate and was easily prepared and removed. Atomic force microscopy was used to determine the step profile. YBa2Cu3O7 step edge junctions fabricated at the LAO steps show promising results. An IcRn product of 1 mV was obtained at 30 K. A Fraunhofer-like magnetic field dependence of Ic was obtained up to ±2 0. One weak link or possibly identical weak links in series for these step edge junctions were observed from the current-voltage (I-V) curves as well as from the magnetic field dependence of the I-V curves. Applied Physics Letters is copyrighted by The American Institute of Physics.
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