| 1. |
- Fu, Y., et al.
(författare)
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Reduced effective temperature of hot electrons in nano-sized metal-oxide-semiconductor field-effect transistors
- 2003
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Ingår i: Applied Physics A. - Berlin / Heidelberg : Springer Berlin/Heidelberg. - 0947-8396 .- 1432-0630. ; 77:6, s. 799-803
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Tidskriftsartikel (refereegranskat)abstract
- Hot electron effects have been extensively studied in metal-oxide-semiconductor field-effect transistors (MOSFETs). The importance of these effects when the dimensions are drastically reduced has so far not been thoroughly investigated. The scope of this paper is therefore to present a detailed study of the effective temperature of excess electrons in nanoscale MOSFETs by solving coupled Schrödinger and Poisson equations. It is found that the increased doping levels and reduced junction depths lead to substantially higher local Fermi levels in the source and drain regions. As a result, the temperature difference between electrons injected into the drain and local electrons is reduced. The scaling of the gate oxide thickness, as well as the drain voltage furthermore reduces the electron temperature in the drain. The detrimental effects of hot electron injection are therefore expected to be decreased by scaling the MOSFET.
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| 2. |
- Jeppson, Kjell, 1947, et al.
(författare)
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Theory of a room-temperature silicon quantum dot device as a sensitive electrometer
- 2004
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Ingår i: Journal of Applied Physics. - Melville, NY : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 95:1, s. 323-326
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Tidskriftsartikel (refereegranskat)abstract
- We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dotand quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current-voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometerapplications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes indevice power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width. (©2004 American Institute of Physics)
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| 3. |
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| 4. |
- Nilsson, Pernilla, 1969-, et al.
(författare)
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Learning physics with the body
- 2004
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Konferensbidrag (refereegranskat)abstract
- Experiments can be one way to interest pupils in science. Here, we describe experiments that incorporate children’s experiences of the body in a setting outside the classroom and shared with teacher students. Pre- and post-tests show that children recalled a number of significant observations concerning the concepts of gravity and inertia. In interviews after the event, the children had a chance to reflect on their experiences. Their responses are analysed and categorised with a socio-cultural approach of learning.
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| 5. |
- Pettersson, Håkan, 1962-, et al.
(författare)
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Case study of an InAs quantum dot memory : Optical storing and deletion of charge
- 2001
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Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 79:1, s. 78-80
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Tidskriftsartikel (refereegranskat)abstract
- We have studied self-assembled InAs quantum dots embedded in an InP matrix using photocapacitance and photocurrent spectroscopy. These dots are potentially promising for memories due to the large confinement energy for holes. In this work we have realized simple quantum dot memory by placing the dots in the space–charge region of a Schottky junction. Our measurements reveal that a maximum of about one hole can be stored per dot. We also find that illumination for an extended period deletes the stored charge. We show that these limitations do not reflect the intrinsic properties of the dots, but rather the sample structure in combination with deep traps present in the sample.
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| 6. |
- Öjekull, Jenny, 1973, et al.
(författare)
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Dissociative recombination of NH4+ and ND4+ ions : Storage ring experiments and ab initio molecular dynamics
- 2004
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Ingår i: Journal of Chemical Physics. - : AIP Publishing. - 0021-9606 .- 1089-7690. ; 120:16, s. 7391-7399
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Tidskriftsartikel (refereegranskat)abstract
- The dissociative recombination (DR) process of NH4+ and ND4+ molecular ions with free electrons has been studied at the heavy-ion storage ring CRYRING (Manne Siegbahn Laboratory, Stockholm University). The absolute cross sections for DR of NH4+ and ND4+ in the collision energy range 0.001-1 eV are reported, and thermal rate coefficients for the temperature interval from 10 to 2000 K are calculated from the experimental data. The absolute cross section for NH4+ agrees well with earlier work and is about a factor of 2 larger than the cross section for ND4+. The dissociative recombination of NH4+ is dominated by the product channels NH3+H (0.85+/-0.04) and NH2+2H (0.13+/-0.01), while the DR of ND4+ mainly results in ND3+D (0.94+/-0.03). Ab initio direct dynamics simulations, based on the assumption that the dissociation dynamics is governed by the neutral ground-state potential energy surface, suggest that the primary product formed in the DR process is NH3+H. The ejection of the H atom is direct and leaves the NH3 molecule highly vibrationally excited. A fraction of the excited ammonia molecules may subsequently undergo secondary fragmentation forming NH2+H. It is concluded that the model results are consistent with gross features of the experimental results, including the sensitivity of the branching ratio for the three-body channel NH2+2H to isotopic exchange.
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