| 1. |
- Chalangar, Ebrahim, PhD student, 1984-, et al.
(författare)
-
Nanopatterned rGO/ZnO : Al seed layer for vertical growth of single ZnO nanorods
- 2023
-
Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 34:25, s. 1-7
-
Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.
|
|
| 2. |
- Devi, Chandni, et al.
(författare)
-
Electrical transport properties of InAs nanowires synthesized by a solvothermal method
- 2020
-
Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 31:23
-
Tidskriftsartikel (refereegranskat)abstract
- Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices. © 2020 IOP Publishing Ltd.
|
|
| 3. |
- Devi, Chandni, et al.
(författare)
-
High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers
- 2021
-
Ingår i: Scientific Reports. - London : Nature Publishing Group. - 2045-2322. ; 11:1
-
Tidskriftsartikel (refereegranskat)abstract
- Solid-state sodium ion batteries are frequently referred to as the most promising technology for next-generation energy storage applications. However, developing a suitable solid electrolyte with high ionic conductivity, excellent electrolyte–electrode interfaces, and a wide electrochemical stability window, remains a major challenge. Although solid-polymer electrolytes have attracted great interest due to their low cost, low density and very good processability, they generally have significantly lower ionic conductivity and poor mechanical strength. Here, we report on the development of a low-cost composite solid polymer electrolyte comprised of poly(ethylene oxide), poly(vinylpyrrolidone) and sodium hexafluorophosphate, mixed with indium arsenide nanowires. We show that the addition of 1.0% by weight of indium arsenide nanowires increases the sodium ion conductivity in the polymer to 1.50 × 10−4 Scm−1 at 40 °C. In order to explain this remarkable characteristic, we propose a new transport model in which sodium ions hop between close-spaced defect sites present on the surface of the nanowires, forming an effective complex conductive percolation network. Our work represents a significant advance in the development of novel solid polymer electrolytes with embedded engineered ultrafast 1D percolation networks for near-future generations of low-cost, high-performance batteries with excellent energy storage capabilities. © 2021, The Author(s).
|
|
| 4. |
- Jafari Jam, R., et al.
(författare)
-
Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse
- 2020
-
Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 31:20
-
Tidskriftsartikel (refereegranskat)abstract
- We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis. A silicon nitride template was deposited on a p-type GaAs substrate. Then a pattern was transferred to the substrate by nanoimprint lithography and reactive ion etching. Thermal evaporation was used to define Au seed particles. Metalorganic vapour phase epitaxy was used to grow AlAs-GaAs NWs in the vapour-liquid-solid growth mode. The yield of synthesised nanowires, compared to the number expected from the patterned template, was more than 80%. After growth, the nanowires were embedded in a polymer and mechanically removed from the parent substrate. The parent substrate was then immersed in an HCl:H2O (1:1) mixture to dissolve the remaining stub of the sacrificial AlAs segment. The pattern fidelity was preserved after peeling off the nanowires and cleaning, and the semiconductor surface was flat and ready for reuse. Au seed particles were then deposited on the substrate by use of pulse electrodeposition, which was selective to the openings in the growth template, and then nanowires were regrown. The yield of regrowth was less optimal compared to the first growth but the pattern was preserved. Our results show a promising approach to reduce the final cost of III-V nanowire based solar cells. © 2020 The Author(s). Published by IOP Publishing Ltd.
|
|
| 5. |
- Jafari Jam, Reza, et al.
(författare)
-
Template-assisted vapour-liquid-solid growth of InP nanowires on (001) InP and Si substrates
- 2020
-
Ingår i: Nanoscale. - Cambridge : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 12:2, s. 888-894
-
Tidskriftsartikel (refereegranskat)abstract
- We report on the synthesis of vertical InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour-liquid-solid growth. A thick silicon oxide layer was first deposited on the substrates. The samples were then patterned by electron beam lithography and deep dry etching through the oxide layer down to the substrate surface. Gold seed particles were subsequently deposited in the holes of the pattern by the use of pulse electrodeposition. The subsequent growth of nanowires by the vapour-liquid-solid method was guided towards the [001] direction by the patterned oxide template, and displayed a high growth yield with respect to the array of holes in the template. In order to confirm the versatility and robustness of the process, we have also demonstrated guided growth of InP nanowire p-n junctions and InP/InAs/InP nanowire heterostructures on (001) InP substrates. Our results show a promising route to monolithically integrate III-V nanowire heterostructure devices with commercially viable (001) silicon platforms.
|
|
| 6. |
- Jeddi Abdarloo, Hossein, Doktorand, 1992-, et al.
(författare)
-
Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
- 2023
-
Ingår i: ACS Photonics. - Washington, DC : American Chemical Society (ACS). - 2330-4022. ; 10:6, s. 1748-1755
-
Tidskriftsartikel (refereegranskat)abstract
- High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 μW) @ VGS = 1.0 V/VDS = 0.5 V with a gain-bandwidth product of around 1 MHz, in excellent agreement with a comprehensive real-device model. © 2023 The Authors. Published by American Chemical Society.
|
|
| 7. |
- Kumari, Renu, et al.
(författare)
-
Artificial synaptic characteristics of PVA:ZnO nanocomposite memristive devices
- 2023
-
Ingår i: APL Materials. - Melville : American Institute of Physics (AIP). - 2166-532X. ; 11:10
-
Tidskriftsartikel (refereegranskat)abstract
- Computational efficiency is significantly enhanced using artificial neural network-based computing. A two-terminal memristive device is a powerful electronic device that can mimic the behavior of a biological synapse in addition to storing information and performing logic operations. This work focuses on the fabrication of a memristive device that utilizes a resistive switching layer composed of polyvinyl alcohol infused with ZnO nanoparticles. By incorporating ZnO nanoparticles into the polymer film, the fabricated memristive devices exhibit functionalities that closely resemble those of biological synapses, including short-term and long-term plasticity, paired-pulse facilitation, and spike time-dependent plasticity. These findings establish the ZnO nanoparticle-polymer nanocomposite as a highly promising material for future neuromorphic systems. © 2023 Author(s).
|
|
| 8. |
- Menon, Heera, et al.
(författare)
-
Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
- 2023
-
Ingår i: Nanoscale Advances. - Cambridge : Royal Society of Chemistry. - 2516-0230. ; 5:4, s. 1152-1162
-
Tidskriftsartikel (refereegranskat)abstract
- Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W−1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K. © 2023 RSC.
|
|
| 9. |
- Prakash, Jai, et al.
(författare)
-
Characterization, sources, and atmospheric transformation of a few key short-lived climate pollutants (SLCPs) at a rural super-site in the Indo-Gangetic Plain (IGP) of India
- 2022
-
Ingår i: Environmental Science: Atmospheres. - : Royal Society of Chemistry (RSC). - 2634-3606. ; 2, s. 517-538
-
Tidskriftsartikel (refereegranskat)abstract
- The Indo-Gangetic Plain (IGP) region of India faces some of the most severe air pollution problems on Earth that threaten human health, food security, ecosystems, environmental sustainability, and the climate. The aim of this study is to identify and characterize the sources of key short-lived climate pollutants (SLCPs) - black carbon (BC), brown carbon (BrC), and ozone (O3) - as well as other pollutants [carbon monoxide (CO) and nitrogen oxides NOX = NO and NO2], and interlinked atmospheric processes of their formation and transformation at our long-term air pollution monitoring station in a remote rural IGP site, the Indo-Gangetic Plains Centre for Air Research and Education (IGP-CARE). Because of its location, measurements acquired at IGP-CARE provide otherwise new information on the key SLCPs in the IGP region at a remote and rural location. The year-long measurement data at this remote site provided new insights into the variability of SLCP concentration and interlinked atmospheric processes that affect air quality in the rural IGP region. Thirteen episodic events (E1-E13) of elevated BC and BrC concentrations were identified, which can largely be attributed to the local biomass burning activities in the neighboring rural communities. It is suggested that high concentrations of BrC were mostly primary in nature and thought to be co-emitted with BC from biomass burning. Also, secondary pollutant tropospheric O3 showed elevated concentration. O3 peaks were mostly attributed to local ozone formation. Nevertheless, on several occasions, O3 emission was also attributed to regional urban areas. This study's most important finding is that BrC concentrations were relatively high throughout the year with very pronounced diurnal variation with distinct morning and evening peaks in general and a minimum at around noon time; this is hypothesized to be associated with daytime photochemical processes. Analyses using a conditional bivariate probability function (CBPF) and potential source contribution function (PSCF) suggest that regional sources likely affected the local concentrations of SLCPs. These results partly explain the high concentrations and spatial distributions of SLCPs at the local and regional scales at the IGP-CARE site in winter and autumn. In contrast, in the summer and monsoon seasons, strong convection likely favored the dilution of pollutants.
|
|
