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Träfflista för sökning "WFRF:(Suvorov S.) srt2:(2005-2009)"

Sökning: WFRF:(Suvorov S.) > (2005-2009)

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1.
  • Bruzzi, M, et al. (författare)
  • Radiation-hard semiconductor detectors for SuperLHC
  • 2005
  • Ingår i: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
  • Tidskriftsartikel (refereegranskat)abstract
    • An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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2.
  • Scandale, W., et al. (författare)
  • High-efficiency deflection of high-energy negative particles through axial channeling in a bent crystal
  • 2009
  • Ingår i: Physics Letters B. - : Elsevier BV. - 0370-2693 .- 1873-2445. ; 680:4, s. 301-304
  • Tidskriftsartikel (refereegranskat)abstract
    • Deflection due to axial channeling in a silicon crystal bent along the 〈111〉 axis was observed for 150 GeV/c negative particles, mainly π- mesons, at one of the secondary beams of the CERN SPS. The whole beam was deflected to one side with the efficiency of about 90% and with the peak position at the bend crystal angle α = 43 μrad. The deflection occurs mainly due to doughnut scattering of above-barrier particles by the atomic strings of the crystal. However, due to a high probability of particle recapture into bound states with the atomic strings their contribution to the deflection should be about 15% for our case according to simulation results. © 2009 Elsevier B.V. All rights reserved.
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3.
  • Scandale, W., et al. (författare)
  • Observation of channeling and volume reflection in bent crystals for high-energy negative particles
  • 2009
  • Ingår i: Physics Letters B. - : Elsevier BV. - 0370-2693 .- 1873-2445. ; 681:3, s. 233-236
  • Tidskriftsartikel (refereegranskat)abstract
    • Deflection due to planar channeling and volume reflection in short bent silicon crystals was observed for the first time for 150 GeV / c negative particles, π- mesons, at one of the secondary beams of the CERN SPS. The deflection efficiency was about 30% for channeling and higher than 80% for volume reflection. Volume reflection occurs, in spite of the attractive character of the forces acting between the particles and the crystal planes, in a wide angular range of the crystal orientations determined by the crystal bend angle. © 2009 Elsevier B.V. All rights reserved.
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5.
  • Scandale, W., et al. (författare)
  • First observation of multiple volume reflection by different planes in one bent silicon crystal for high-energy protons
  • 2009
  • Ingår i: Physics Letters B. - : Elsevier BV. - 0370-2693 .- 1873-2445. ; 682:3, s. 274-277
  • Tidskriftsartikel (refereegranskat)abstract
    • Multiple volume reflection by different planes in a bent silicon crystal with its 〈111〉 axis orientation close to the beam direction was observed for the first time for 400 GeV/c protons at the CERN SPS. The proton beam was deflected to the side opposite to the crystal bend by an angle of about 67 μrad, which is five times larger than in a single volume reflection by the (110) bent planes. The registered efficiency of one side deflection was about 84%. It was shown that multiple volume reflection transforms to a single volume reflection when the orientation angle of the 〈111〉 axis relative to the beam direction is increased. © 2009 Elsevier B.V. All rights reserved.
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6.
  • Scandale, W., et al. (författare)
  • Observation of nuclear dechanneling for high-energy protons in crystals
  • 2009
  • Ingår i: Physics Letters B. - : Elsevier BV. - 0370-2693 .- 1873-2445. ; 680:2, s. 129-132
  • Tidskriftsartikel (refereegranskat)abstract
    • Channeling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c protons with an angular spread much narrower than the critical channeling angle. Particle dechanneling due to multiple scattering on the atomic nuclei of the crystal was observed and its dechanneling length was measured to be about 1.5 mm. For a crystal with length comparable to such dechanneling length, an efficiency of 83.4% was recorded, which is close to the maximum value expected for a parallel beam and exceeds the previously known limitation of deflection efficiency for long crystals. © 2009 Elsevier B.V. All rights reserved.
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7.
  • Scandale, Walter, et al. (författare)
  • Apparatus to study crystal channeling and volume reflection phenomena at the SPS H8 beamline
  • 2008
  • Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 79:2
  • Tidskriftsartikel (refereegranskat)abstract
    • A high performance apparatus has been designed and built by the H8-RD22 collaboration for the study of channeling and volume reflection phenomena in the interaction of 400 GeVc protons with bent silicon crystals, during the 2006 data taking in the external beamline H8 of the CERN SPS. High-quality silicon short crystals were bent by either anticlastic or quasimosaic effects. Alignment with the highly parallel (8 μrad divergence) proton beam was guaranteed through a submicroradian goniometric system equipped with both rotational and translational stages. Particle tracking was possible by a series of silicon microstrip detectors with high-resolution and a parallel plate gas chamber, triggered by various scintillating detectors located along the beamline. Experimental observation of volume reflection with 400 GeVc protons proved true with a deflection angle of (10.4±0.5) μrad with respect to the unperturbed beam, with a silicon crystal whose (111) planes were parallel to the beam. © 2008 American Institute of Physics.
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8.
  • Scandale, Walter, et al. (författare)
  • Deflection of 400GeV/c proton beam with bent silicon crystals at the CERN Super Proton Synchrotron
  • 2008
  • Ingår i: Physical Review Special Topics - Accelerators and Beams. - 1098-4402. ; 11:6
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper presents a detailed study of the deflection phenomena of a 400GeV/c proton beam impinging on a new generation of bent silicon crystals; the tests have been performed at the CERN Super Proton Synchrotron H8 beam line. Channeling and volume reflection angles are measured with an extremely precise goniometer and with high resolution silicon microstrip detectors. Volume reflection has been observed and measured for the first time at this energy, with a single-pass efficiency as large as 98%, in good agreement with the simulation results. This efficiency makes volume reflection a possible candidate for collimation with bent crystals at the CERN Large Hadron Collider. © 2008 The American Physical Society.
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