1. |
|
|
2. |
|
|
3. |
- Hermannsson, P.G., et al.
(författare)
-
Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface
- 2013
-
Ingår i: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 740-742, s. 749-752
-
Konferensbidrag (refereegranskat)abstract
- We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.
|
|