| 1. |
- Bamiedakis, N., et al.
(författare)
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40 Gb/s Data Transmission Over a 1-m-Long Multimode Polymer Spiral Waveguide for Board-Level Optical Interconnects
- 2015
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 33:4, s. 882-888
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Tidskriftsartikel (refereegranskat)abstract
- Optical interconnects have attracted considerable attention for use in short-reach communication links within high-performance electronic systems, such as data centers, supercomputers, and data storage systems. Multimode polymer waveguides, in particular, constitute an attractive technology for use in board-level interconnects as they can be cost-effectively integrated onto standard PCBs and allow system assembly with relaxed alignment tolerances. However, their highly multimoded nature raises important concerns about their bandwidth limitations and their potential to support very high on-board data rates. In this paper, we report record error-free (BER
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| 2. |
- Bamiedakis, N., et al.
(författare)
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56 Gb/s PAM-4 data transmission over a 1 m long multimode polymer interconnect
- 2015
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Ingår i: CLEO: Science and Innovations, CLEO-SI 2015, San Jose; United States; 10-15 May 2015. - 9781557529688 ; , s. 2267-
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Konferensbidrag (refereegranskat)abstract
- Advanced modulation formats can enable >40 Gb/s data rates in waveguide-based optical interconnects without the need for high-specification optoelectronic components. Record 56Gb/s PAM-4 data transmission is demonstrated over a 1 m-long multimode polymer waveguide.
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| 3. |
- Castro, Jose Manuel, et al.
(författare)
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48.7 Gb/s 4-PAM Transmission over 200 m of High Bandwidth MMF using an 850 nm VCSEL
- 2015
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 27:17, s. 1799-1801
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate 4-PAM 48.67 Gb/s transmission, using a directly modulated VCSEL, over 50, 100 and 200 m of multimode fiber with partial dispersion compensation properties. The results of our experiments indicate that 200 m reach is achievable with forward error correcting codes with small overhead.
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| 4. |
- Castro, Jose Manuel, et al.
(författare)
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50 Gb/s 4-PAM over 200 m of High Bandwidth MMF using a 850 nm VCSEL
- 2015
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Ingår i: Optical Fiber Communication Conference 2015, Los Angeles, California, United States, 22–26 March 2015. - 9781557529374
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Konferensbidrag (refereegranskat)abstract
- Experiments for transmission of 50Gb/s, 4-PAM using direct modulated VCSEL over 100m and 200m of MMF with partial dispersion compensation properties are presented.
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| 5. |
- Haglund, Erik, 1985, et al.
(författare)
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30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25-50 Gbit/s
- 2015
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 51:14, s. 1096-1097
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Tidskriftsartikel (refereegranskat)abstract
- A high-speed and energy-efficient oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) for optical interconnects is presented. A record-high modulation bandwidth of 30 GHz is reached for a 3.5 mu m oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy-efficient transmission with a dissipated heat energy in the VCSEL of
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| 6. |
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| 7. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Impact of Damping on High-Speed Large Signal VCSEL Dynamics
- 2015
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 33:4, s. 795 - 801
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Tidskriftsartikel (refereegranskat)abstract
- An investigation of the optimal relaxation oscillation damping for high-speed 850-nm vertical-cavity surface-emitting laser (VCSEL) under large signal operation is presented, using devices with K-factors ranging from 0.1 to 0.4 ns. Time-domain measurements of turn-on transients are used to quantify damping dependent rise times, overshoots, and signal amplitudes. Optical eye diagrams together with timing jitter and bit error rate measurements reveal a tradeoff between the rise time and the duration of the relaxation oscillations. To produce a high-quality eye at a specific data rate, a proper amount of damping is needed to simultaneously obtain sufficiently high bandwidth and low timing jitter. We found that for error-free transmission, a VCSEL with a 0.3 ns K-factor achieved the best receiver sensitivity at 10 and 25 Gb/s, whereas a less damped VCSEL with a 0.2 ns K-factor achieved the best sensitivity at 40 Gb/s.
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| 8. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Silicon-Integrated 850-nm Hybrid-Cavity VCSEL
- 2015
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Ingår i: Optics and Photonics in Sweden, 28-29 Oct. 2015.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Silicon photonics is a promising energy-efficient and cost-effective platform for optical integrated circuits. However, due to its indirect bandgap silicon cannot be used to produce effective light sources. An attractive solution to this is heterogeneous integration of the GaAs-based vertical-cavity surface-emitting laser (VCSEL) on silicon. The GaAs-based VCSEL has proven to be both high-speed and energy efficient, with data rates above 70 Gb/s and less than 100 fJ/bit dissipated power up to 50 Gb/s.By employing ultra-thin divinylsiloxane-is-benzocyclobutene (DVS-BCB) adhesive bonding a GaAs-based “half-VCSEL” with a gain region and a top distributed Bragg Reflector (DBR) has been attached to a dielectric DBR on silicon. This creates a hybrid cavity where the standing-wave optical field is extending into both the silicon and GaAs-based parts of the cavity.The hybrid-cavity may eventually enable light to be tapped off to an in-plane waveguide, e.g. using a high contrast grating (HCG) instead of the bottom DBR. Replacing the whole bottom DBR with an HCG also gives the possibility to set the wavelength according to the grating parameters, enabling fabrication of multi-wavelength VCSEL arrays that together with integrated wavelength multiplexers could form 850-nm wavelength division multiplexed (WDM) transmitters.A 9 µm oxide aperture diameter VCSEL has a threshold current of 1.2 mA and a maximum output power of 1.6 mW at ~845 nm. The performance is currently limited by the too small gain-to-resonance detuning and the high thermal impedance.
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| 9. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Silicon-integrated short-wavelength hybrid-cavity VCSEL
- 2015
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 23:26, s. 33634-33640
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based “half-VCSEL” has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon- and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.
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| 10. |
- Kuchta, D.M., et al.
(författare)
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A 50 Gb/s NRZ Modulated 850nm VCSEL Transmitter Operating Error Free to 90°C
- 2015
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 33:4, s. 802-810
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Tidskriftsartikel (refereegranskat)abstract
- We report on the properties of an 850nm VCSEL transmitter running at 50Gb/s with NRZ modulation from 30°C to 90°C. This is the highest transmitter operating temperature at 50Gb/s for a VCSEL link of any wavelength. This achievement is made possible by a combination of a high speed VCSEL design and driver and receiver circuits that incorporate equalization. Without equalization, the highest temperature attained with BER
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