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  • Xie, Mengyao, et al. (författare)
  • Effect of Mg doping on the structural and free-charge carrier properties of InN
  • 2014
  • Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 115:16, s. 163504-
  • Tidskriftsartikel (refereegranskat)abstract
    • We study the structural and free-charge carrier properties of two sets of InN films grown by molecular beam epitaxy doped with different Mg concentrations from 1x1018 cm-3 to 3.9x1021 cm-3. We determine the effect of Mg doping on surface morphology, lattice parameters, structural characteristics and carrier properties. We show that infrared spectroscopic ellipsometry can be used to evidence successful p-type doping in InN, which is an important issue in InN. High resolution X-ray diffraction, combined with atomic force microscopy measurements reveals a drastic decrease in structural quality of the film for Mg concentrations above 1020 cm-3, accompanied with a significant increase in surface roughness. In addition, a decrease of the c-lattice parameter and an increase of the a-lattice parameter are found with increasing Mg concentration. Different contributions to the strain are discussed and it is suggested that the incorporation of Mg leads to a change of growth mode and generation of tensile growth strain. At high Mg concentrations zinc-blende InN inclusions appear which are suggested to originate from higher densities of stacking faults. Infrared spectroscopic ellipsometry analysis shows a reduced LPP-coupling, manifested as a characteristic dip in the IRSE data, and qualitatively different broadening behavior for Mg concentrations between 1.1x1018 cm−3 and 2.9x1019 cm−3 indicate the existence of a p-type conducting bulk InN layer for these Mg concentrations.
  • Zweidinger, S., et al. (författare)
  • In situ studies of the oxidation of HCl over RuO2 model catalysts: Stability and reactivity
  • 2010
  • Ingår i: Journal of Catalysis. - : Elsevier. - 1090-2694. ; 272:1, s. 169-175
  • Tidskriftsartikel (refereegranskat)abstract
    • Structure-activity experiments were performed for the HCl oxidation reaction (Deacon-like process) over RuO2 model catalysts - RuO2(1 1 0) and RuO2(1 0 0) - applying in situ surface X-ray diffraction (SXRD) combined with on-line mass spectrometry. The studied model catalysts turned out to be long-term stable under reaction conditions with gas feed ratios p(HCl):p(O-2) ranging from 1:4 to 4:1 in the mbar pressure regime and temperatures as high as 685 K. Even pure HCl exposure in the mbar regime was not able to reduce RuO2 below 600 K; above 650 K chemical reduction of the oxide sets in. Under strongly oxidizing reaction conditions, the (surface) oxides grow slowly in thickness. On-line reactivity experiments of both types of model catalysts in a batch reactor yield a mean turn-over frequency (TOP) of 0.6 Cl-2 molecules per second and active site for the HCl oxidation at 650 K and initial partial pressures of p(HCl) = 2 mbar and p(O-2) = 0.5 mbar. The HCl oxidation over RuO2 is therefore considered to be structure insensitive. (C) 2010 Elsevier Inc. All rights reserved.
  • Zweidinger, S., et al. (författare)
  • Reaction mechanism of the oxidation of HCl over RuO2(110)
  • 2008
  • Ingår i: Journal of Physical Chemistry C. - : The American Chemical Society (ACS). - 1932-7447. ; 112:27, s. 9966-9969
  • Tidskriftsartikel (refereegranskat)abstract
    • High-resolution core-level shift spectroscopy and temperature-programmed reaction experiments together with density functional theory calculations reveal that the oxidation of HCl with oxygen producing Cl-2 and water proceeds on the chlorine-stabilized RuO2(110)surface via a one-dimensional Langmuir-Hinshelwood mechanism. The recombination of two adjacent chlorine atoms on the catalyst's surface constitutes the rate-determining step in this novel Deacon-like process.
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