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1211.
  • Zota, Cezar B., et al. (författare)
  • InGaAs tri-gate MOSFETs with record on-current
  • 2017
  • Ingår i: 62nd IEEE International Electron Devices Meeting, IEDM 2016,San Francisco, United States,2016-12-03 - 2016-12-07. - Institute of Electrical and Electronics Engineers Inc..
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.
1212.
  • Zota, Cezar B., et al. (författare)
  • Junctionless tri-gate InGaAs MOSFETs
  • 2017
  • Ingår i: Japanese Journal of Applied Physics. - Japan Society of Applied Physics. - 0021-4922. ; 56:12
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L g = 25 nm at a nanowire dimension of 7 - 16 nm2. These devices use a single 7-nm-thick In0.80Ga0.20As (N D = 1 - 1019 cm-3) layer as both channel and contacts. The devices show SSsat = 76 mV/dec, peak g m = 1.6 mSm and I ON = 160A/m (at I OFF = 100 nA/m and V DD = 0.5 V), the latter which is the highest reported value for a junctionless FET. We also show that device performance is mainly limited by high parasitic access resistance due to the narrow and thin contact layer.
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1213.
  • Zota, Cezar B., et al. (författare)
  • Record performance for junctionless transistors in InGaAs MOSFETs
  • 2017
  • Ingår i: 37th Symposium on VLSI Technology, VLSI Technology 2017,Kyoto, Japan,2017-06-05 - 2017-06-08. - Institute of Electrical and Electronics Engineers Inc..
  • Konferensbidrag (refereegranskat)abstract
    • We demonstrate junctionless tri-gate MOSFETs utilizing a single layer 7 nm thick In0.80Ga0.20As (ND ∼ 1×1019 cm-3) as both channel and contacts. Devices with source and drain metal separation of 32 nm and Lg of 25 nm exhibit SS = 76 mV/dec., both the highest reported gm = 1.6 mS/μα and Ion = 160 μA/μm (VDD = 0.5 V, IOFF = 100 nA/μm) for a junctionless transistor. We also examine the influence of the contact thickness, comparing double-layer junctionless devices with 37 nm thick contacts with single-layer 7 nm contact devices.
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1214.
  • Zota, Cezar B., et al. (författare)
  • Single suspended InGaAs nanowire MOSFETs
  • 2016
  • Ingår i: Technical Digest - International Electron Devices Meeting, IEDM. - Institute of Electrical and Electronics Engineers Inc.. - 0163-1918. ; s. 1-31
  • Tidskriftsartikel (refereegranskat)
1215.
  • Zota, Cezar, et al. (författare)
  • High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
  • 2014
  • Ingår i: 26th International Conference on Indium Phosphide and Related Materials (IPRM),2014-05-11 - 2014-05-15. - IEEE - Institute of Electrical and Electronics Engineers Inc..
  • Konferensbidrag (refereegranskat)abstract
    • We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.
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1216.
  • Zota, Cezar, et al. (författare)
  • In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
  • 2014
  • Ingår i: IEEE Electron Device Letters. - IEEE - Institute of Electrical and Electronics Engineers Inc.. - 0741-3106. ; 35:3, s. 342-344
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on In0.53Ga0.47As n-channel multiple-gate field-effect transistors (MuGFETs or FinFETs) with a novel method of selectively regrown lateral (parallel to substrate) nanowires as channels. The device exhibits a minimum subthreshold slope of 85 mV/decade and drain-induced barrier lowering of 88 mV/V at V-DS = 0.05 V and L-G = 200 nm. At V-DS = 0.5 V, (gm), (max) = 1.67 mS/mu m is achieved (L-G = 32 nm). The extrapolated cutoff frequency f(T) of 210 GHz and the maximum oscillation frequency f(max) of 250 GHz are the highest of any reported III-V multiple-gate MOSFET.
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1217.
  •  
1218.
  • Zota, Cezar, et al. (författare)
  • Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
  • 2015
  • Ingår i: ACS Nano. - The American Chemical Society (ACS). - 1936-086X. ; 9:10, s. 9892-9897
  • Tidskriftsartikel (refereegranskat)abstract
    • We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 +/- 40 nm and an effective electron mobility of 3300 +/- 300 cm(2)/V.s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as partial strain relaxation.
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1219.
  • Zota, Cezar, et al. (författare)
  • Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
  • 2014
  • Ingår i: IEEE Transactions on Electron Devices. - IEEE - Institute of Electrical and Electronics Engineers Inc.. - 0018-9383. ; 61:12, s. 4078-4083
  • Tidskriftsartikel (refereegranskat)abstract
    • We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. L-g = 32 nm devices exhibit peak transconductance of 1.8 mS/mu m at V-ds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-p model is developed, which includes both the effect of impact ionization and border traps and shows good fit to measurement data. Simultaneously extracted f(t) and fmax are 280 and 312 GHz, respectively, which are the highest reported values of any III-V multiple-gate MOSFET.
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1220.
  • Ärlelid, Mats, et al. (författare)
  • 60 GHz Ultra-Wideband Impulse Radio Transmitter
  • 2009
  • Ingår i: 9th IEEE International Conference on Ultra-Wideband,Vancouver, Canada,2009-09-09 - 2009-09-11. - IEEE - Institute of Electrical and Electronics Engineers Inc..
  • Konferensbidrag (refereegranskat)abstract
    • An impulse radio transmitter at 60 GHz with pulse duration time down to 100 ps is reported. OOK modulation is presented and the results show promise for other modulation schemes. The transmitter consists of a gated tunnel diode in parallel with a coplanar waveguide, which is a design that provides direct conversion from the baseband pulse train to radio frequency wavelets with a center frequency of 60 GHz. This is achieved by turning an oscillator on and off. Pulse repetition rate up to 2 Gpulses/s is measured and the pulse data shows extremely short start up and decay time.
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