| 11. |
- Lavrov, E.V., et al.
(författare)
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Combined infrared absorption and modeling study of a dicarbon-dihydrogen defect in silicon
- 2000
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:19, s. 12859-12867
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Tidskriftsartikel (refereegranskat)abstract
- Crystalline silicon samples doped with carbon were irradiated with electrons and subsequently implanted with protons. Infrared-absorption measurements revealed local modes of hydrogen and carbon at 2967.4, 911.7, and 654.7 cm-1, which originate from the same defect. Measurements on samples codoped with different carbon and hydrogen isotopes showed that the defect contains two equivalent carbon and two equivalent hydrogen atoms. From uniaxial stress measurements, the defect is found to display trigonal symmetry. Ab initio local-density-functional theory was applied to calculate the structure and local vibrational modes of defects with pairs of equivalent carbon and hydrogen atoms. Based on these results, the observed local modes are ascribed to a defect with two adjacent substitutional carbon atoms, each of which binds a hydrogen atom located between the carbon atoms.
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| 12. |
- Lavrov, E. V., et al.
(författare)
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Local vibrational modes of two neighboring substitutional carbon atoms in silicon
- 2000
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:1, s. 158-165
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Tidskriftsartikel (refereegranskat)abstract
- Infrared absorption measurements on n-type silicon doped with carbon and irradiated with electrons at room temperature have revealed new absorption lines at 527.4 and 748.7 cm-1, which originate from the same defect. The 748.7-cm-1 line is observed only when the sample is cooled in the dark and the spectrum is measured through a low-pass filter with cutoff frequency below 6000 cm-1. Light with frequency above 6000 cm-1 removes this line and generates the 527.4-cm-1 line. Comparison with spectra recorded on irradiated silicon doped with 13C shows that the two lines represent local vibrational modes of carbon. The annealing behavior of the 748.7-cm-1 line is identical to that of the EPR signal originating from the negative charge state of two adjacent substitutional carbon atoms (Cs-Cs)-. The 527.4- and 748.7-cm-1 lines are ascribed to the E modes of Cs-Cs in the neutral and negative charge states, respectively. The structure and local vibrational modes of (Cs-Cs)0 and (Cs-Cs)- have been calculated by ab initio local density functional theory. The calculated structures agree qualitatively with those obtained previously by Hartree-Fock methods, but the calculated Si-C and C-C bond lengths differ somewhat. The calculated local mode frequencies are in good agreement with those observed. The formation of Cs-Cs has also been investigated. It is suggested that the center is formed when a vacancy is trapped by the metastable substitutional carbon-interstitial carbon center, Cs-Ci.
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| 13. |
- Nielsen, B. Bach, et al.
(författare)
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Local vibrational modes of weakly bound O-H complexes in SI
- 1997
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Ingår i: Defects in semiconductors. - : Trans Tech Publications Inc.. ; , s. 391-398
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Konferensbidrag (refereegranskat)abstract
- Local vibrational modes of two oxygen-hydrogen complexes have been identified with infrared absorption spectroscopy. Samples of intrinsic silicon and samples doped with 16O or 18O isotopes were implanted with protons and deuterons at ∼20 K. After the implantation, infrared absorbance spectra were measured at 8 K on unannealed samples. An oxygen mode at 1077 cm-1 and a hydrogen mode at 1879 cm-1, which originate from the same defect OHI were observed in the as-implanted samples. Heat-treatment at 200 K produced a new center OHII with modes at 1028 and 1830 cm-1. OHI anneals out at ∼130 K while OHII is stable up to ∼240 K. OHI and OHII are tentatively identified with two complexes of interstitial oxygen and bond-centred hydrogen. Ab initio theory was applied to calculate the structure and local modes of three such complexes. The results qualitatively support our tentative assignments.
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| 14. |
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| 15. |
- Prokunina, Ludmila, et al.
(författare)
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A regulatory polymorphism in PDCD1 is associated with susceptibility to systemic lupus erythematosus in humans
- 2002
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 32:4, s. 666-669
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Recension (övrigt vetenskapligt/konstnärligt)abstract
- Systemic lupus erythematosus (SLE, OMIM 152700) is a complex autoimmune disease that affects 0.05% of the Western population, predominantly women. A number of susceptibility loci for SLE have been suggested in different populations, but the nature of the susceptibility genes and mutations is yet to be identified. We previously reported a susceptibility locus (SLEB2) for Nordic multi-case families. Within this locus, the programmed cell death 1 gene (PDCD1, also called PD-1) was considered the strongest candidate for association with the disease. Here, we analyzed 2,510 individuals, including members of five independent sets of families as well as unrelated individuals affected with SLE, for single-nucleotide polymorphisms (SNPs) that we identified in PDCD1. We show that one intronic SNP in PDCD1 is associated with development of SLE in Europeans (found in 12% of affected individuals versus 5% of controls; P = 0.00001, r.r. (relative risk) = 2.6) and Mexicans (found in 7% of affected individuals versus 2% of controls; P = 0.0009, r.r. = 3.5). The associated allele of this SNP alters a binding site for the runt-related transcription factor 1 (RUNX1, also called AML1) located in an intronic enhancer, suggesting a mechanism through which it can contribute to the development of SLE in humans.
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| 16. |
- Rahbi, R., et al.
(författare)
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Neutralisation of group vi donors by hydrogen in gallium arsenide
- 1994
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Ingår i: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 91:3, s. 187-190
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Tidskriftsartikel (refereegranskat)abstract
- The infrared absorption of GaAs:S and GaAs:Te samples partially neutralised by hydrogen show two local modes with very similar frequencies. These modes are comparable to the ones already reported in GaAs:Se. These results are interpreted by assuming that neutralisation takes place by the formation of a bond between a Ga atom first neighbour of the chalcogen and a H atom in an antibonding location. This assumption is strengthened by ab initio calculations that provide also frequencies of the right order of magnitude.
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| 17. |
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| 18. |
- Wagner, J, et al.
(författare)
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Di-Carbon defects in annealed highly carbon doped GaAs
- 1997
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 78:1, s. 74-77
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Tidskriftsartikel (refereegranskat)abstract
- Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm -1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm -1 from a different C-C complex.
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| 19. |
- Zhang, Xiaoliang, et al.
(författare)
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Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells
- 2018
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Ingår i: Advanced Energy Materials. - : Wiley-VCH Verlagsgesellschaft. - 1614-6832 .- 1614-6840. ; 8:6
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Tidskriftsartikel (refereegranskat)abstract
- Solution-processed colloidal quantum dot (CQD) solar cells harvesting the infrared part of the solar spectrum are especially interesting for future use in semitransparent windows or multilayer solar cells. To improve the device power conversion efficiency (PCE) and stability of the solar cells, surface passivation of the quantum dots is vital in the research of CQD solar cells. Herein, inorganic CsPbI3 perovskite (CsPbI3-P) coating on PbS CQDs with a low-temperature, solution-processed approach is reported. The PbS CQD solar cell with CsPbI3-P coating gives a high PCE of 10.5% and exhibits remarkable stability both under long-term constant illumination and storage under ambient conditions. Detailed characterization and analysis reveal improved passivation of the PbS CQDs with the CsPbI3-P coating, and the results suggest that the lattice coherence between CsPbI3-P and PbS results in epitaxial induced growth of the CsPbI3-P coating. The improved passivation significantly diminishes the sub-bandgap trap-state assisted recombination, leading to improved charge collection and therefore higher photovoltaic performance. This work therefore provides important insight to improve the CQD passivation by coating with an inorganic perovskite ligand for photovoltaics or other optoelectronic applications.
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| 20. |
- Andersen, O., et al.
(författare)
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Electrical activity of carbon-hydrogen centers in Si
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:23, s. 235205-1
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Tidskriftsartikel (refereegranskat)abstract
- The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
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