| 21. |
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| 22. |
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| 23. |
- Luo, Gang, et al.
(författare)
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Nanoimprint lithography for the fabrication of interdigitated cantilever arrays
- 2006
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:8, s. 1906-1910
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Tidskriftsartikel (refereegranskat)abstract
- We report on the realization of a novel interdigitated cantilever array with electrostatic control of the shape of the interdigitated array. It consists of an array of SiO2/metal double-finger cantilevers in a grating configuration together with an electrical connection part. The complete grating structure is fabricated with nanoimprint lithography, UV lithography and reactive ion etching. The patterns of the cantilever arrays are defined by nanoimprint lithography. The electrical contact pads are defined and aligned with the imprinted grating pattern by UV lithography. The two steps of reactive ion etching are optimized to get vertical sidewalls of the SiO2 cantilevers and finally to release them from the Si substrate. By applying a bias, the shape of the cantilever array can be altered due to the electrostatic force. The dimensions of the cantilevers and the spacing between them are optimized to achieve the desired functional operating characteristics of the structures. Since the fabrication scheme is based on nanoimprint lithography, such electrostatically controlled periodic structures may be relatively easily and non-expensively realized in various configurations, allowing them to function as optical switching elements, electrical filters, mass sensors, etc.
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| 24. |
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| 25. |
- Luo, Gang, et al.
(författare)
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Scanning probe lithography for nanoimprinting mould fabrication
- 2006
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:12, s. 3018-3022
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Tidskriftsartikel (refereegranskat)abstract
- We propose a rational fabrication method for nanoimprinting moulds by scanning probe lithography. By wet chemical etching, different kinds of moulds are realized on Si( 110) and Si( 100) surfaces according to the Si crystalline orientation. The structures have line widths of about 200 nm with a high aspect ratio. By reactive ion etching, moulds with patterns free from the limitation of Si crystalline orientation are also obtained. With closed-loop scan control of a scanning probe microscope, the length of patterned lines is more than 100 mu m by integrating several steps of patterning. The fabrication process is optimized in order to produce a mould pattern with a line width about 10 nm. The structures on the mould are further duplicated into PMMA resists through the nanoimprinting process. The method of combining scanning probe lithography with wet chemical etching or reactive ion etching (RIE) provides a resistless route for the fabrication of nanoimprinting moulds.
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| 26. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- 2002
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 666-668
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
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| 27. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 28. |
- Maximov, Ivan, et al.
(författare)
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New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm2. Studies of the resist properties as a function of chemical composition and development conditions are also presented
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| 29. |
- Meng, Fantao, et al.
(författare)
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Efficient methods of nanoimprint stamp cleaning based on imprint self-cleaning effect.
- 2011
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 22:18
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Tidskriftsartikel (refereegranskat)abstract
- Nanoimprint lithography (NIL) is a nonconventional lithographic technique that promises low-cost, high-throughput patterning of structures with sub-10 nm resolution. Contamination of nanoimprint stamps is one of the key obstacles to industrialize the NIL technology. Here, we report two efficient approaches for removal of typical contamination of particles and residual resist from stamps: thermal and ultraviolet (UV) imprinting cleaning-both based on the self-cleaning effect of imprinting process. The contaminated stamps were imprinted onto polymer substrates and after demolding, they were treated with an organic solvent. The images of the stamp before and after the cleaning processes show that the two cleaning approaches can effectively remove contamination from stamps without destroying the stamp structures. The contact angles of the stamp before and after the cleaning processes indicate that the cleaning methods do not significantly degrade the anti-sticking layer. The cleaning processes reported in this work could also be used for substrate cleaning.
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| 30. |
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