| 41. |
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| 42. |
- Dragioti, Elena, Ph.D., et al.
(författare)
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Does psychotherapy work? An umbrella review of meta-analyses of randomized controlled trials
- 2017
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Ingår i: Acta Psychiatrica Scandinavica. - : WILEY. - 0001-690X .- 1600-0447. ; 136:3, s. 236-246
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Forskningsöversikt (refereegranskat)abstract
- Objective: To map and evaluate the evidence across meta-analyses of randomized controlled trials (RCTs) of psychotherapies for various outcomes. Methods: We identified 173 eligible studies, including 247 meta-analyses that synthesized data from 5157 RCTs via a systematic search from inception to December 2016 in the PubMed, PsycINFO and Cochrane Database of Systematic Reviews. We calculated summary effects using random-effects models, and we assessed between-study heterogeneity. We estimated whether large studies had significantly more conservative results compared to smaller studies (small-study effects) and whether the observed positive studies were more than expected by chance. Finally, we assessed the credibility of the evidence using several criteria. Results: One hundred and ninety-nine meta-analyses were significant at P-value amp;lt;= 0.05, and almost all (n = 196) favoured psychotherapy. Large and very large heterogeneity was observed in 130 meta-analyses. Evidence for small-study effects was found in 72 meta-analyses, while 95 had evidence of excess of significant findings. Only 16 (7%) provided convincing evidence that psychotherapy is effective. These pertained to cognitive behavioural therapy (n = 6), meditation therapy (n = 1), cognitive remediation (n = 1), counselling (n = 1) and mixed types of psychotherapies (n = 7). Conclusions: Although almost 80% meta-analyses reported a nominally statistically significant finding favouring psychotherapy, only a few meta-analyses provided convincing evidence without biases.
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| 43. |
- Evangelou, Evangelos, et al.
(författare)
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Meta-analysis of genome-wide association studies confirms a susceptibility locus for knee osteoarthritis on chromosome 7q22
- 2011
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Ingår i: Annals of the Rheumatic Diseases. - : BMJ. - 1468-2060 .- 0003-4967. ; 70:2, s. 349-355
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Tidskriftsartikel (refereegranskat)abstract
- Objectives Osteoarthritis (OA) is the most prevalent form of arthritis and accounts for substantial morbidity and disability, particularly in older people. It is characterised by changes in joint structure, including degeneration of the articular cartilage, and its aetiology is multifactorial with a strong postulated genetic component. Methods A meta-analysis was performed of four genome-wide association (GWA) studies of 2371 cases of knee OA and 35 909 controls in Caucasian populations. Replication of the top hits was attempted with data from 10 additional replication datasets. Results With a cumulative sample size of 6709 cases and 44 439 controls, one genome-wide significant locus was identified on chromosome 7q22 for knee OA (rs4730250, p = 9.2 x 10(-9)), thereby confirming its role as a susceptibility locus for OA. Conclusion The associated signal is located within a large (500 kb) linkage disequilibrium block that contains six genes: PRKAR2B (protein kinase, cAMP-dependent, regulatory, type II, beta), HPB1 (HMG-box transcription factor 1), COG5 (component of oligomeric golgi complex 5), GPR22 (G protein-coupled receptor 22), DUS4L (dihydrouridine synthase 4-like) and BCAP29 (B cell receptor-associated protein 29). Gene expression analyses of the (six) genes in primary cells derived from different joint tissues confirmed expression of all the genes in the joint environment.
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| 44. |
- Konofaos, N., et al.
(författare)
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Electrical characterisation of SrTiO3/Si interfaces
- 2002
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Ingår i: Journal of Non-Crystalline Solids. - 0022-3093 .- 1873-4812. ; 303:1, s. 185-189
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Tidskriftsartikel (refereegranskat)abstract
- Deposition of SrTiO3 (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (Dit) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of Dit between 2 × 1011 and 3.5 × 1012 eV-1 cm-2 while the higher temperature deposited samples had a higher Dit ranging between 1 × 1011 and 1 × 1013 eV-1 cm-2. The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry. © 2002 Elsevier Science Ltd. All rights reserved.
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| 45. |
- Konofaos, N., et al.
(författare)
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Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications
- 2004
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 51:7, s. 1202-1205
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Tidskriftsartikel (refereegranskat)abstract
- Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent AI metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and electrical measurements, revealing the films transparency, the dielectric constant, the switching time characteristics, and the trapped charges density. Dielectric constant values as high as 120 were obtained for low frequencies of around 2 kHz, the switching time was found to be 3.2 µs and the trapped charges were found equal to 2.9 nCcm-2. The results showed that the films were suitable for use in electronic devices where high capacitance is required and for potential applications in optical devices. © 2004 IEEE.
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| 46. |
- Schumann, Gunter, et al.
(författare)
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KLB is associated with alcohol drinking, and its gene product beta-Klotho is necessary for FGF21 regulation of alcohol preference
- 2016
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Ingår i: Proceedings of the National Academy of Sciences of the United States of America. - : Proceedings of the National Academy of Sciences. - 0027-8424 .- 1091-6490. ; 113:50, s. 14372-14377
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Tidskriftsartikel (refereegranskat)abstract
- Excessive alcohol consumption is a major public health problem worldwide. Although drinking habits are known to be inherited, few genes have been identified that are robustly linked to alcohol drinking. We conducted a genome-wide association metaanalysis and replication study among >105,000 individuals of European ancestry and identified beta-Klotho (KLB) as a locus associated with alcohol consumption (rs11940694; P = 9.2 x 10(-12)). beta-Klotho is an obligate coreceptor for the hormone FGF21, which is secreted from the liver and implicated in macronutrient preference in humans. We show that brain-specific beta-Klotho KO mice have an increased alcohol preference and that FGF21 inhibits alcohol drinking by acting on the brain. These data suggest that a liver-brain endocrine axis may play an important role in the regulation of alcohol drinking behavior and provide a unique pharmacologic target for reducing alcohol consumption.
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| 47. |
- Wang, Z., et al.
(författare)
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Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures
- 2002
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Ingår i: Philosophical Magazine B. - : Informa UK Limited. - 1364-2812 .- 1463-6417. ; 82:8, s. 891-903
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Tidskriftsartikel (refereegranskat)abstract
- SrTiO3 (STO) thin films were deposited on p-type Si(100) substrates by rf magnetron sputtering at various substrate temperatures, and their structural and electrical properties were investigated without post-deposition annealing. The thickness of the films was in the range from 300 to 500 nm while the deposition temperature was varied between room temperature and 550°C. Compositional and structural characterizations included X-ray diffraction, Rutherford back-scattering spectroscopy and variable-angle spectroscopic ellipsometry. Metal-insulator-semiconductor diodes with the configuration of Al/STO/p-Si/Al were fabricated and characterized by capacitance-voltage, current voltage and admittance spectroscopy measurements. Depending on the substrate temperatures, the dielectric constant of the films varied between 60 and 120 and the loss factor between 0.019 and 0.051 at 100 kHz. All films showed high charge storage capacity, varying between 1.9 and 3 µm cm-2. However, the films deposited at 200°C showed the lowest density of bulk trapped charges (150nC cm-2) and interface states ((1.2-6.1) × 1011 cm-2 eV-1), and are therefore considered to be the most suitable for device applications.
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| 48. |
- Wang, Z., et al.
(författare)
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Electrical properties of SrTiO3 thin films on Si deposited by magnetron sputtering at low temperature
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:10, s. 1513-1515
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Tidskriftsartikel (refereegranskat)abstract
- Deposition of SrTiO3 (STO) thin films by radio-frequency magnetron sputtering in an ultrahigh vacuum system at a low substrate temperature (~200°C) was performed in order to produce high-quality STO/p-Si (100) interfaces and STO insulator layers with dielectric constants of high magnitude. The STO films were identified as polycrystalline by x-ray diffraction, and were approximated with a layered structure according to the best fitting results of raw data from both Rutherford backscattering spectroscopy and variable angle spectroscopic ellipsometry. Room-temperature current-voltage and capacitance-voltage (C-V) measurements on Al/STO/p-Si diodes clearly revealed metal-insulator-semiconductor behavior, and the STO/p-Si interface state densities were of the order of 1011 eV-1 cm-2. The dielectric constant of the STO film was 65, and the dielectric loss factor varied between 0.05 and 0.55 for a frequency range of 1 kHz-10 MHz. For a 387 nm thick STO film, the dielectric breakdown field was 0.31 MV cm-1, and the charge storage capacity was 2.1 µC cm-2. These results indicate that STO films are suitable for applications as insulator layers in dynamic random access memories or as cladding layers in electroluminescent devices. © 2001 American Institute of Physics.
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