| 971. |
- Li, L., et al.
(författare)
-
Toroidal modeling of plasma response to RMP fields in ITER
- 2017
-
Ingår i: Plasma Physics and Controlled Fusion. - : IOP Publishing. - 1361-6587 .- 0741-3335. ; 59:4
-
Tidskriftsartikel (refereegranskat)abstract
- A systematic numerical study is carried out, computing the resistive plasma response to the resonant magnetic perturbation (RMP) fields for ITER plasmas, utilizing the toroidal code MARS-F (Liu et al 2000 Phys. Plasmas 7 3681). A number of factors are taken into account, including the variation of the plasma scenarios (from 15 MA Q = 10 inductive scenario to the 9 MA Q = 5 steady state scenario), the variation of the toroidal spectrum of the applied fields (n = 1, 2, 3, 4, with n being the toroidal mode number), the amplitude and phase variation of the currents in three rows of the RMP coils as designed for ITER, and finally a special case of mixed toroidal spectrum between the n = 3 and n = 4 RMP fields. Two-dimensional parameter scans, for the edge safety factor and the coil phasing between the upper and lower rows of coils, yield 'optimal' curves that maximize a set of figures of merit, that are defined in this work to measure the plasma response. Other two-dimensional scans of the relative coil current phasing among three rows of coils, at fixed coil currents amplitude, reveal a single optimum for each coil configuration with a given n number, for the 15 MA ITER inductive plasma. On the other hand, scanning of the coil current amplitude, at fixed coil phasing, shows either synergy or cancellation effect, for the field contributions between the off-middle rows and the middle row of the RMP coils. Finally, the mixed toroidal spectrum, by combining the n = 3 and the n = 4 RMP field, results in a substantial local reduction of the amplitude of the plasma surface displacement.
|
|
| 972. |
- Liang, C, et al.
(författare)
-
Infertility, recurrent pregnancy loss, and risk of stroke: pooled analysis of individual patient data of 618 851 women
- 2022
-
Ingår i: BMJ (Clinical research ed.). - : BMJ. - 1756-1833. ; 377, s. e070603-
-
Tidskriftsartikel (refereegranskat)abstract
- ObjectiveTo examine the associations of infertility, recurrent miscarriage, and stillbirth with the risk of first non-fatal and fatal stroke, further stratified by stroke subtypes.DesignIndividual participant pooled analysis of eight prospective cohort studies.SettingCohort studies across seven countries (Australia, China, Japan, Netherlands, Sweden, the United Kingdom, and the United States) participating in the InterLACE (International Collaboration for a Life Course Approach to Reproductive Health and Chronic Disease Events) consortium, which was established in June 2012.Participants618 851 women aged 32.0-73.0 years at baseline with data on infertility, miscarriage, or stillbirth, at least one outcome event (non-fatal or fatal stroke), and information on covariates were included; 93 119 women were excluded. Of the participants, 275 863 had data on non-fatal and fatal stroke, 54 716 only had data on non-fatal stroke, and 288 272 only had data on fatal stroke.Main outcome and measuresNon-fatal strokes were identified through self-reported questionnaires, linked hospital data, or national patient registers. Fatal strokes were identified through death registry data.ResultsThe median follow-up for non-fatal stroke and fatal stroke was 13.0 years (interquartile range 12.0-14.0) and 9.4 years (7.6-13.0), respectively. A first non-fatal stroke was experienced by 9265 (2.8%) women and 4003 (0.7%) experienced a fatal stroke. Hazard ratios for non-fatal or fatal stroke were stratified by hypertension and adjusted for race or ethnicity, body mass index, smoking status, education level, and study. Infertility was associated with an increased risk of non-fatal stroke (hazard ratio 1.14, 95% confidence interval 1.08 to 1.20). Recurrent miscarriage (at least three) was associated with higher risk of non-fatal and fatal stroke (1.35, 1.27 to 1.44, and 1.82, 1.58 to 2.10, respectively). Women with stillbirth were at 31% higher risk of non-fatal stroke (1.31, 1.10 to 1.57) and women with recurrent stillbirth were at 26% higher risk of fatal stroke (1.26, 1.15 to 1.39). The increased risk of stroke (non-fatal or fatal) associated with infertility or recurrent stillbirths was mainly driven by a single stroke subtype (non-fatal ischaemic stroke and fatal haemorrhagic stroke), while the increased risk of stroke (non-fatal or fatal) associated with recurrent miscarriages was driven by both subtypes.ConclusionA history of recurrent miscarriages and death or loss of a baby before or during birth could be considered a female specific risk factor for stroke, with differences in risk according to stroke subtypes. These findings could contribute to improved monitoring and stroke prevention for women with such a history.
|
|
| 973. |
|
|
| 974. |
- Liang, D., et al.
(författare)
-
Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
- 2019
-
Ingår i: Nanoscale Research Letters. - : Springer Science and Business Media LLC. - 1556-276X .- 1931-7573. ; 14
-
Tidskriftsartikel (refereegranskat)abstract
- To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy, and substrate strain of InGaNBi versus In and Bi compositions are studied by using first-principles calculations. The lattice parameters increase almost linearly with increasing In and Bi compositions. By bismuth doping, the quaternary InGaNBi bandgap could cover a wide energy range from 3.273 to 0.651 eV for Bi up to 9.375% and In up to 50%, corresponding to the wavelength range from 0.38-1.9 µm. The calculated spin-orbit splitting energy are about 0.220 eV for 3.125%, 0.360 eV for 6.25%, and 0.600 eV for 9.375% Bi, respectively. We have also shown the strain of InGaNBi on GaN; it indicates that through adjusting In and Bi compositions, InGaNBi can be designed on GaN with an acceptable strain.
|
|
| 975. |
- Liang, D., et al.
(författare)
-
Electronic and excitonic properties of two-dimensional and bulk InN crystals
- 2017
-
Ingår i: RSC Advances. - : Royal Society of Chemistry (RSC). - 2046-2069. ; 7:67, s. 42455-42461
-
Tidskriftsartikel (refereegranskat)abstract
- Motivated by potential extensive applications in nanoelectronics devices of III-Vmaterials, we calculate the structural and optoelectronic properties of two-dimensional (2D) InN as well as its three-dimensional (3D) counterparts by using density functional theory (DFT). Compared with the 3D form, the In-N bonding in the 2D InN layer is stronger in terms of the shorter bond length, and the formation of the 2D one is higher in terms of the lower cohesive energy. The bandgap of monolayer InN is 0.31 eV at PBE level and 2.02 eV at GW(0) level. By many-body GW(0) and BSE within RPA calculations, monolayer InN presents an exciton binding energy of 0.12 eV. The fundamental bandgap increases along with layer reduction and is converted from direct (0.7-0.9 eV) in bulk InN to indirect (2.02 eV) in monolayer InN. Under biaxial compressive strain, the bandgap of 2D-InN can be further tuned from indirect to direct.
|
|
| 976. |
- Liang, D., et al.
(författare)
-
Structural, electronic, vibrational and optical properties of Bi-n clusters
- 2017
-
Ingår i: Modern Physics Letters B. - : World Scientific Pub Co Pte Lt. - 0217-9849 .- 1793-6640. ; 31:28
-
Tidskriftsartikel (refereegranskat)abstract
- The neutral, anionic and cationic bismuth clusters with the size n up to 14 are investigated by using B3LYP functional within the regime of density functional theory and the LAN2DZ basis set. By analysis of the geometries of the Bin (n = 2-14)clusters, where cationic and anionic bismuth clusters are largely similar to those of neutral ones, a periodic effect by adding units with one to four atoms into smaller cluster to form larger cluster is drawn for the stable structures of bismuth clusters. An even odd alteration is shown for the properties of the clusters, such as the calculated binding energies and dissociation energies, as well as frontier orbital energies, electron affinities, ionization energies. All the properties indicate that the Bi-4 cluster is the most possible existence in bismuth-containing materials, which supports the most recent experiment. The orbital compositions, infrared and Raman activities and the ultraviolet absorption of the most possible tetramer bismuth cluster are given in detail to reveal the periodic tendency of adding bismuth atoms and the stability of tetramer bismuth cluster.
|
|
| 977. |
- Liang, D., et al.
(författare)
-
Tunable band gaps in stanene/MoS2 heterostructures
- 2017
-
Ingår i: Journal of Materials Science. - : Springer Science and Business Media LLC. - 0022-2461 .- 1573-4803. ; 52:10, s. 5799-5806
-
Tidskriftsartikel (refereegranskat)abstract
- First-principles calculations have been performed to investigate the geometric and electronic properties of stanene layer paired with monolayer MoS2 substrate with van der Waals corrections. It is found that the stanene can absorb on the monolayer MoS2 substrate forming stanene/MoS2 heterostructures, indicating a weak interface interaction. The Dirac point of stanene is still preserved on MoS2 substrate, and the band gap is opened about 67 meV due to the influence of the substrate. Moreover, the band gap is able to be effectively modulated under an external strain and a perpendicular electric field. These results are helpful for exploring the tunability of the electronic properties of stanene absorbed on semiconducting substrate.
|
|
| 978. |
|
|
| 979. |
|
|
| 980. |
|
|
