| 81. |
- Sun, Jie, et al.
(författare)
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Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
- 2009
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Ingår i: 2009 IEEE Nanotechnology Materials and Devices Conference. ; , s. 183-185
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Konferensbidrag (refereegranskat)abstract
- Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.
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| 82. |
- Sun, Jie, et al.
(författare)
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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
- 2009
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 94:4
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Tidskriftsartikel (refereegranskat)abstract
- Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
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| 83. |
- Sun, Jie, et al.
(författare)
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Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
- 2011
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 32:2, s. 131-133
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.
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| 84. |
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| 85. |
- Sun, Jie, et al.
(författare)
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Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
- 2007
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Ingår i: Physics of Semiconductors, Pts A and B. - : AIP. - 0094-243X .- 1551-7616. ; 893, s. 1471-1472
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Konferensbidrag (refereegranskat)abstract
- Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.
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| 86. |
- Sun, Jie, et al.
(författare)
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Novel room-temperature functional analogue and digital nanoelectronic circuits based on three-terminal ballistic junctions and planar quantum-wire transistors
- 2008
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Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6596 .- 1742-6588. ; 100, s. 052073-052073
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Konferensbidrag (refereegranskat)abstract
- Three-Terminal ballistic junctions (TBJs) and planar quantum-wire transistors (QWTs) are emerging nanoelectronic devices with various novel electrical properties. In this work, we realize novel nanoelectronic analogue and digital circuits with TBJs and planar QWTs made on In0.75Ga0.25As/InP two-dimensional electron gas (2DEG) material. First we show that a single TBJ can work as a frequency mixer or a phase detector. Second, we fabricate an integrated nanostructure containing two planar QWTs, which can be used as an RS flip-flop element. Third, we make a nanoelectronic circuit by the integration of two TBJs and two planar QWTs. This circuit shows the RS flip-flop functionalities with much larger noise margins in both high and low level inputs. All measurements in this work are done at room temperature.
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| 87. |
- Suyatin, Dmitry, et al.
(författare)
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Concept for assembling individual nanostructure-based components into complex devices
- 2015
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 33:6
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Tidskriftsartikel (refereegranskat)abstract
- Minute electronic (bio) devices will likely play an increasingly important role in everyday life and beyond, as overall device size often limits device functionality and applicability, a factor especially critical for brain implants. Recent progress in micro-and nanoelectronics has enabled the production of nanoscale electronic components; however, overall device size is often defined by technical and technological limitations, in particular, the ability to combine heterogeneous components made using incompatible processes on different substrates. Here, the authors suggest and evaluate a concept and approach aimed at the direct three-dimensional assembly of individual nanoscale-based components into complex devices for brain implants. They demonstrate this assembly possibility via the transfer of free-standing GaP nanowires, as well as test devices made of gold film which exhibit good quality electrical contacts. The key features essential for such a functional assembly process are discussed. The authors expect this approach to be generic and to enable the development of complex minute electronic (bio) devices based on nanoscale components. The proposed type of assembly may be especially beneficial for devices with strict size constraints, such as implantable neural interfaces. (C) 2015 American Vacuum Society.
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| 88. |
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| 89. |
- Suyatin, Dmitry, et al.
(författare)
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Electrical properties of self-assembled branched InAs nanowire junctions
- 2008
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 8:4, s. 1100-1104
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Tidskriftsartikel (refereegranskat)abstract
- We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.
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| 90. |
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