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Sökning: WFRF:(Montelius Lars)

  • Resultat 171-174 av 174
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171.
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172.
  • Zakharov, Alexei, et al. (författare)
  • Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Konferensbidrag (refereegranskat)abstract
    • We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO2 surfaces after electron beam exposure and resist development. The attenuation of the SiO2 valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found that correctly exposed and developed PMMA resist leaves residues with an average thickness of about 0.7 nm. Higher exposure doses result in decrease of the film thickness, but still with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices
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173.
  • Zankovych, S, et al. (författare)
  • Nanoimprint-induced effects on electrical and optical properties of quantum well structures
  • 2003
  • Ingår i: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 214-220
  • Konferensbidrag (refereegranskat)abstract
    • A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As-InP and GaAs-Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
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174.
  • ZhiQiang, Guan, et al. (författare)
  • Surface-enhanced Raman scattering on dual-layer metallic grating structures
  • 2010
  • Ingår i: Chinese Science Bulletin. - : Springer Science and Business Media LLC. - 1001-6538 .- 1861-9541. ; 55:24, s. 2643-2648
  • Tidskriftsartikel (refereegranskat)abstract
    • Dual-layer Metallic grating (DMG) structures as surface-enhanced Raman scattering (SERS) substrates are studied using benzenethiol as the probe analyte. The DMG structure consists of a SiO2 grating and 100-nm-thick gold coating layers. An enhancement factor of 10(5) is achieved by optimizing the SiO2 grating height within the range from 165 to 550 nm. The enhancement factor dependence on the SiO2 grating height is due to the surface plasmon excitation, which is dependent on the polarization of the incident light, and confirmed by finite difference time domain simulations. This study demonstrates the advantages of high uniformity, reproducibility and sensitivity in the DMG structures for SERS applications.
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  • Resultat 171-174 av 174
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