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Sökning: WFRF:(Persson Lars Erik)

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21.
  • Egard, Mikael, et al. (författare)
  • Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
  • 2010
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 10:3, s. 809-812
  • Tidskriftsartikel (refereegranskat)abstract
    • In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.
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22.
  • Erlinge, David, et al. (författare)
  • Identification of vulnerable plaques and patients by intracoronary near-infrared spectroscopy and ultrasound (PROSPECT II) : a prospective natural history study
  • 2021
  • Ingår i: The Lancet. - : Elsevier. - 0140-6736 .- 1474-547X. ; 397:10278, s. 985-995
  • Tidskriftsartikel (refereegranskat)abstract
    • Background: Near-infrared spectroscopy (NIRS) and intravascular ultrasound are promising imaging modalities to identify non-obstructive plaques likely to cause coronary-related events. We aimed to assess whether combined NIRS and intravascular ultrasound can identify high-risk plaques and patients that are at risk for future major adverse cardiac events (MACEs).Methods: PROSPECT II is an investigator-sponsored, multicentre, prospective natural history study done at 14 university hospitals and two community hospitals in Denmark, Norway, and Sweden. We recruited patients of any age with recent (within past 4 weeks) myocardial infarction. After treatment of all flow-limiting coronary lesions, three-vessel imaging was done with a combined NIRS and intravascular ultrasound catheter. Untreated lesions (also known as non-culprit lesions) were identified by intravascular ultrasound and their lipid content was assessed by NIRS. The primary outcome was the covariate-adjusted rate of MACEs (the composite of cardiac death, myocardial infarction, unstable angina, or progressive angina) arising from untreated non-culprit lesions during follow-up. The relations between plaques with high lipid content, large plaque burden, and small lumen areas and patient-level and lesion-level events were determined. This trial is registered with ClinicalTrials.gov, NCT02171065.Findings: Between June 10, 2014, and Dec 20, 2017, 3629 non-culprit lesions were characterised in 898 patients (153 [17%] women, 745 [83%] men; median age 63 [IQR 55-70] years). Median follow-up was 3.7 (IQR 3.0-4.4) years. Adverse events within 4 years occurred in 112 (13.2%, 95% CI 11.0-15.6) of 898 patients, with 66 (8.0%, 95% CI 6.2-10.0) arising from 78 untreated non-culprit lesions (mean baseline angiographic diameter stenosis 46.9% [SD 15.9]). Highly lipidic lesions (851 [24%] of 3500 lesions, present in 520 [59%] of 884 patients) were an independent predictor of patient-level non-culprit lesion-related MACEs (adjusted odds ratio 2.27, 95% CI 1.25-4.13) and nonculprit lesion-specific MACEs (7.83, 4.12-14.89). Large plaque burden (787 [22%] of 3629 lesions, present in 530 [59%] of 898 patients) was also an independent predictor of non-culprit lesion-related MACEs. Lesions with both large plaque burden by intravascular ultrasound and large lipid-rich cores by NIRS had a 4-year non-culprit lesion-related MACE rate of 7.0% (95% CI 4.0-10.0). Patients in whom one or more such lesions were identified had a 4-year non-culprit lesion-related MACE rate of 13.2% (95% CI 9.4-17.6).Interpretation: Combined NIRS and intravascular ultrasound detects angiographically non-obstructive lesions with a high lipid content and large plaque burden that are at increased risk for future adverse cardiac outcomes.
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23.
  • Frisk, Karin, et al. (författare)
  • Characterisation of EBM-built shelled samples of Ti6Al4V compacted by HIP
  • 2016
  • Ingår i: World PM 2016 Congress and Exhibition. - : European Powder Metallurgy Association (EPMA). - 9781899072484
  • Konferensbidrag (refereegranskat)abstract
    • Compaction of additively manufactured Ti6Al4V components by Hot Isostatic Pressing (HIP) is often applied to eliminate porosity, producing fully dense material. In the present work shelled samples produced by Electron Beam Melting with the Arcam process (EBM) were compacted by HIP to produce fully dense samples. Cylindrical samples were studied. The walls of the cylinders were built with EBM, and the powder from the process was left uncompacted inside the cylinders. Samples with different wall thicknesses were produced. The samples were thereafter subjected to a HIP compaction. The critical wall thicknesses needed for compaction were evaluated, and the microstructures characterized. The results show that fully dense samples, with very fine microstructures, are possible.
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24.
  • Grevholm, Barbro, et al. (författare)
  • Hva er matematikk?
  • 2013
  • Ingår i: Matematikkundervisning 1-7. - : Cappelen Damm Akademisk. - 9788202405458 ; , s. 31-51
  • Bokkapitel (övrigt vetenskapligt/konstnärligt)
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25.
  • Henriksnäs, Johanna, 1973- (författare)
  • Helicobacter pylori and Gastric Protection Mechanisms : An in vivo Study in Mice and Rats
  • 2005
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • The stomach is frequently exposed to hazardous agents and to resist this harsh environment, several protective mechanisms exist. Of special interest is the gastric pathogen Helicobacter pylori which causes gastritis, ulcers and cancer but the mechanism leading to these diseases are still unclear. However it is very likely that H. pylori negatively influence the protection mechanisms that exist in the stomach. The aims of the present investigation were first to develop an in vivo mouse model in which different protection mechanisms could be studied, and second to investigate the influence of H. pylori on these mechanisms. An in vivo preparation of the gastric mucosa in mice was developed. This preparation allows studies of different gastric mucosal variables and can also be applied for studies in other gastro-intestinal organs. Mice chronically infected with H. pylori, were shown to have a reduced ability of the mucosa to maintain a neutral pH at the epithelial cell surface. This could be due to the thinner inner, firmly adherent mucus gel layer, and/or to defective bicarbonate transport across the epithelium. The Cl-/HCO3- exchanger SLC26A9 was inhibited by NH4+, which also is produced by H. pylori. The mRNA levels of SLC26A9 were upregulated in infected mice, suggesting a way to overcome the inhibition of the transporter. Furthermore, the hyperemic response to acid pH 2 and 1.5 was abolished in these mice. The mechanisms by which the bacteria could alter the blood flow response might involve inhibition of the epithelial iNOS.Water extracts of H. pylori (HPE) reduces the blood flow acutely through an iNOS and nerve-mediated pathway, possibly through the endogenous iNOS inhibitor ADMA. Furthermore, HPE alters the blood flow response to acid as the hyperemic response to acid pH 0.8 is accentuated in mice treated with HPE.
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26.
  • Håkanson, Ulf, et al. (författare)
  • Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy
  • 2002
  • Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Konferensbidrag (refereegranskat)abstract
    • Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made
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27.
  • Håkanson, Ulf, et al. (författare)
  • Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
  • 2002
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:3, s. 494-496
  • Tidskriftsartikel (refereegranskat)abstract
    • We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.
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28.
  • Johansson, Mikael, et al. (författare)
  • Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots
  • 2003
  • Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 68:12
  • Tidskriftsartikel (refereegranskat)abstract
    • We have studied the early stages of GaInP overgrowth on InP quantum dots (QD's) experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy (STM) and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy (TEM). The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the [110] direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase laterally in size and GaInP also starts to grow between the islands, but not covering the top of the InP QD's. The growth of GaInP on top of the QD's commences once the islands have begun to coalesce. Using a model based on the STM and TEM results the electronic structures of the QD's have been calculated by eight-band k.p theory. The calculations are in good agreement with the experimental results. Our findings unravel the details of the strain induced energy shift of the QD luminescence previously reported [Pistol , Appl. Phys. Lett. 67, 1438 (1995)].
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29.
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30.
  • Kilpi, Olli Pekka, et al. (författare)
  • High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
  • 2020
  • Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 41:8, s. 1161-1164
  • Tidskriftsartikel (refereegranskat)abstract
    • Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high Ion. One main bottleneck for the vertical MOSFETs is the large access resistance arising from the contacts and ungated regions. We demonstrate a process to reduce the access resistance by combining a gate-last process with ALD gate-metal deposition. The devices demonstrate fully scalable gm down to Lg = 25 nm. These vertical core/shell InAs/InGaAs MOSFETs demonstrate gm = 3.1 mS/μm and Ron = 190 Ωμm. This is the highest gm demonstrated on Si. Transmission line measurement verifies a low contact resistance with RC = 115 Ωμm, demonstrating that most of the MOSFET access resistance is located in the contact regions.
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