41. |
- Persson, Karl-Magnus, et al.
(författare)
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InAs nanowire MOSFET differential active mixer on Si-substrate
- 2014
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 50:9, s. 682-682
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Tidskriftsartikel (refereegranskat)abstract
- An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.
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42. |
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43. |
- Persson, Karl-Magnus, et al.
(författare)
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Low-frequency noise in vertical InAs nanowire FETs
- 2010
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 31:5, s. 428-430
-
Tidskriftsartikel (refereegranskat)abstract
- This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
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44. |
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45. |
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46. |
- Persson, Olof, et al.
(författare)
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Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2013
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 3:7
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Tidskriftsartikel (refereegranskat)abstract
- MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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47. |
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48. |
- Abdikalikova, Zamira, et al.
(författare)
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Boundedness and compactness of the embedding between spaces with multiweighted derivatives when 1
- 2011
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Ingår i: Czechoslovak Mathematical Journal. - : Institute of Mathematics, Czech Academy of Sciences. - 0011-4642 .- 1572-9141. ; 61:1, s. 7-26
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Tidskriftsartikel (refereegranskat)abstract
- We consider a new Sobolev type function space called the space with multiweighted derivatives W-p(n),(alpha) over bar, where (alpha) over bar = (alpha(0), alpha(1), ......, alpha(n)), alpha(i) is an element of R, i = 0, 1,......,n, and parallel to f parallel to W-p(n),((alpha) over bar) = parallel to D((alpha) over bar)(n)f parallel to(p) + Sigma(n-1) (i=0) vertical bar D((alpha) over bar)(i)f(1)vertical bar, D((alpha) over bar)(0)f(t) = t(alpha 0) f(t), d((alpha) over bar)(i)f(t) = t(alpha i) d/dt D-(alpha) over bar(i-1) f(t), i = 1, 2, ....., n. We establish necessary and sufficient conditions for the boundedness and compactness of the embedding W-p,(alpha) over bar(n) -> W-q,(beta) over bar,(m) when 1 <= q < p < infinity, 0 <= m < n
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49. |
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50. |
- Abramovic, Shoshana, et al.
(författare)
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Fejer and Hermite–Hadamard Type Inequalitiesfor N-Quasiconvex Functions
- 2017
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Ingår i: Mathematical notes of the Academy of Sciences of the USSR. - : Maik Nauka-Interperiodica Publishing. - 0001-4346 .- 1573-8876. ; 102:5-6, s. 599-609
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Tidskriftsartikel (refereegranskat)abstract
- Some new extensions and refinements of Hermite–Hadamard and Fejer type inequali-ties for functions which are N-quasiconvex are derived and discussed.
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