| 41. |
- Wang, Shu Min, 1963, et al.
(författare)
-
Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
- 2011
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Ingår i: 13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011. - 2162-7339. - 9781457708800
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Konferensbidrag (refereegranskat)abstract
- III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
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| 42. |
- Wang, Shu Min, 1963, et al.
(författare)
-
Metamorphic InGaAs Materials and Telecom Lasers
- 2009
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Ingår i: International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper).
-
Konferensbidrag (refereegranskat)
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| 43. |
- Wang, Shu Min, 1963, et al.
(författare)
-
Novel Dilute Bismides for IR Optoelectronics Applications
- 2013
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Ingår i: Asia Communications and Photonics Conference, ACP. - Washington, D.C. : OSA. - 2162-108X.
-
Konferensbidrag (refereegranskat)abstract
- III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).
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| 44. |
- Wiesner, M., et al.
(författare)
-
The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1
-
Tidskriftsartikel (refereegranskat)abstract
- It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
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| 45. |
- Wu, X. Y., et al.
(författare)
-
Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
- 2015
-
Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 30:9
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.
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| 46. |
- Xu, H., et al.
(författare)
-
Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
- 2015
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 5:8
-
Tidskriftsartikel (refereegranskat)abstract
- Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.
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| 47. |
- Ye, Hong, 1987, et al.
(författare)
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High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
- 2013
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Ingår i: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1610-1642 .- 1862-6351. ; 10:5, s. 765-768
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Tidskriftsartikel (refereegranskat)abstract
- Intermediate band solar cells have attracted significant interest as a possible means of achieving high conversion efficiency. Under optimized growth parameters, we successfully achieve a high density of uniform InAs QDs grown on various matrixes by molecular beam epitaxy. Incorporating N atoms into GaAs and AlGaAs barriers effectively compensates the internal compressive strain and avoids formation of dislocations and defects. The 50 stacking of high density and uniform InAs QDs was demonstrated without detectable dislocations using 26 nm GaNAs as a barrier.
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| 48. |
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| 49. |
- Ye, Hong, 1987, et al.
(författare)
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Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
- 2012
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 2:4, s. 042158-
-
Tidskriftsartikel (refereegranskat)abstract
- Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 °C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.
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| 50. |
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