| 41. |
- Suyatin, Dmitry, et al.
(författare)
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Gallium phosphide nanowire arrays and their possible application in cellular force investigations
- 2009
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Ingår i: Journal of Vacuum Science and Technology B. - : American Vacuum Society. - 1520-8567. ; 27:6, s. 3092-3094
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Tidskriftsartikel (refereegranskat)abstract
- The authors report the fabrication of gallium phosphide nanowire arrays that can be used for cellular force measurements. The nanowire positions are defined using electron beam lithography and the nanowires are grown using metal organic vapor phase epitaxy. By varying the nanowire diameter, length, and spacing from substrate to substrate, they can expect to probe cell forces over several orders of magnitude, depending on the chosen substrate. The small diameter of the nanowires allows them to densely pack the array and to achieve unprecedented spatial resolution for future cell force-array applications.
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| 42. |
- Suyatin, Dmitry, et al.
(författare)
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Nano-Schottky contacts realized by bottom-up technique
- 2010
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Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - Piscataway, N.J. : IEEE Press. - 9781424435432 ; , s. 252-253
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Konferensbidrag (refereegranskat)abstract
- Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts. Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the InAs segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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| 43. |
- Suyatin, Dmitry, et al.
(författare)
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Nanowire-Based Electrode for Acute In Vivo Neural Recordings in the Brain
- 2013
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Ingår i: PLoS ONE. - : Public Library of Science (PLoS). - 1932-6203. ; 8:2
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Tidskriftsartikel (refereegranskat)abstract
- We present an electrode, based on structurally controlled nanowires, as a first step towards developing a useful nanostructured device for neurophysiological measurements in vivo. The sensing part of the electrode is made of a metal film deposited on top of an array of epitaxially grown gallium phosphide nanowires. We achieved the first functional testing of the nanowire-based electrode by performing acute in vivo recordings in the rat cerebral cortex and withstanding multiple brain implantations. Due to the controllable geometry of the nanowires, this type of electrode can be used as a model system for further analysis of the functional properties of nanostructured neuronal interfaces in vivo.
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| 44. |
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| 45. |
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| 46. |
- Suyatin, Dmitry, et al.
(författare)
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Properties of electrical contacts to filamentary nanocrystals
- 2007
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Ingår i: Vestnik Voronezskogo Gosudarstvennogo Tehnicheskogo Universiteta. ; 3:11, s. 67-70
-
Tidskriftsartikel (refereegranskat)abstract
- We investigated properties of electrical contacts to filamentary nanocrystals based on InAs, synthesized by chemical-beam epitaxy. Robust, low resistive Ohmic contacts were manufactured to InAs segment of filamentary nanocrystals both directly and indirectly, through a catalytic particle at the top of nanocrystals. Current-voltage characteristics and degradation characteristics of devices based on InAs nanocrystals with electrical contacts are presented. It was determined, that properties of electrical contacts to nanocrystals can be improved by excluding natural oxide layer on the interface between metal and nanocrystal material.
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| 47. |
- Suyatin, Dmitry, et al.
(författare)
-
Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning
- 2014
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Ingår i: Nature Communications. - London : Springer Science and Business Media LLC. - 2041-1723. ; 5
-
Tidskriftsartikel (refereegranskat)abstract
- Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~1017 m−2) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.
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| 48. |
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| 49. |
- Suyatin, Dmitry, et al.
(författare)
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Sulfur passivation for ohmic contact formation to InAs nanowires
- 2007
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:10
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Tidskriftsartikel (refereegranskat)abstract
- We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivation of the contact areas in an ammonium polysulfide, (NH4)(2)S-x, water solution. The nanowires were exposed to different dilution levels of the (NH4)(2)Sx solution before contact metal evaporation. A process based on a highly diluted ( NH4)S-2(x) solution was found to be self-terminating, with minimal etching of the InAs. The stability of the contacts was investigated with electrical measurements as a function of storage time in vacuum and air.
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| 50. |
- Suyatin, Dmitry
(författare)
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Technology and studies of electron transport in InAs nanowire junctions
- 2007
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The topic of this thesis is technology and experimental studies of electron transport in Indium Arsenide (InAs) nanowires and InAs nanowire junctions. The aim of this work has been fabrication of nanoelectronic devices which have possibilities for future nanoelectronics. The first chapter gives an introduction to modern electronics and some important concepts. The second chapter presents an overview of electron transport in three-terminal conductor junctions. The third chapter introduces the InAs self-forming nanowires. The paper attached to the thesis deals with the technology of the formation of electrical contacts to InAs nanowires. The electrical properties of the three-terminal nanowire junction devices and the device applications are shown and discussed in the manuscript attached to the thesis.
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