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- Schuh, P., et al.
(författare)
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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers
- 2017
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Ingår i: Journal of Crystal Growth. - : ELSEVIER SCIENCE BV. - 0022-0248 .- 1873-5002. ; 478, s. 159-162
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a transfer process of 3C-SiC-on-Si (100) seeding layers grown by chemical vapor deposition onto a poly-or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [100] direction resulting in large area crystals (up to approximate to 11 cm(2)) with a thickness of up to approximately 850 lm. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals. (C) 2017 Elsevier B.V. All rights reserved.
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