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Resultat 31-40 av 83

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Numrering	Referens	Omslagsbild	Hitta
31.	Haglund, Åsa, 1976, et al. (författare) Design and evaluation of fundamental mode and polarization stabilized VCSELs with a sub-wavelength surface grating 2006 Ingår i: IEEE Journal of Quantum Electronics. ; 42:3, s. 231-240 Tidskriftsartikel (refereegranskat)
32.	Haglund, Åsa, 1976, et al. (författare) Dynamic mode stability analysis of single-mode VCSELs using a shallow surface relief 2005 Ingår i: Conference on Lasers and Electrooptics (CLEO) Europe. Konferensbidrag (refereegranskat)
33.	Haglund, Åsa, 1976, et al. (författare) Dynamic mode stability analysis of surface relief VCSELs under strong RF modulation 2005 Ingår i: IEEE Photonics Technology Letters. ; 17:8, s. 1602-1604 Tidskriftsartikel (refereegranskat)
34.	Haglund, Åsa, 1976, et al. (författare) Experimental Study of the Combined Mode and Polarization Control in VCSELs with a Sub-Wavelength Surface Grating 2005 Ingår i: Annual Lasers and Electro Optics Society Meeting, Sydney. Konferensbidrag (refereegranskat)
35.	Haglund, Åsa, 1976, et al. (författare) Single fundamental mode output power exceeding 6 mW from VCSELs with a shallow surface relief 2004 Ingår i: IEEE Photonic Technology Lettters. ; 16:2, s. 368,370- Tidskriftsartikel (refereegranskat)
36.	Haglund, Åsa, 1976, et al. (författare) Sub-Wavelength Surface Grating Application for High-Power Fundamental-Mode and Polarization Stabilization of the VCSELs 2005 Ingår i: IEEE ETFA 2005, pp.. Konferensbidrag (refereegranskat)abstract We present a monolithic technique for simultaneous mode and polarization control in oxide-confined VCSELs using a locally etched sub-wavelength surface grating. A single-fundamental mode emission with an SMSR >30 dB and an OPSR ~20 dB is achieved over the entire operational current range, with a maximum output power of 4.1 mW.
37.	Hashemi, Seyed Ehsan, 1986, et al. (författare) Engineering the transverse optical guiding in GaN-based VCSELs to avoid detrimental optical loss 2012 Ingår i: International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan, p. ThP-OD-33. Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract In order to improve the current injection in GaN-based blue vertical cavity surface emitting lasers (VCSELs) a dielectric aperture is generally used in combination with an indium-tin-oxide (ITO) layer on the top intracavity p-contact layer. The most straightforward way to realize this introduces a depression of the structure near the optical axis and we show, by using a 2D effective index method and a 3D coupled-cavity beam propagation method, that this typically results in optically anti-guided structures with associated high optical losses and thus very high threshold gains. Remarkably, the threshold gain reduces with increased negative guiding, which is due to improved lateral confinement and reduction of lateral leakage. Still, moderately positively guided designs should be preferred to avoid the detrimental effect of lateral leakage and high diffraction loss. To ensure positive index guiding, we propose to planarize the structure or introduce an elevation near the optical axis by additional processing, with an associated reduction in threshold material gain from 6000 cm-1 to 2000 cm-1 for the studied structures.
38.	Healy, S. B., et al. (författare) Active Region Design for High-Speed 850-nm VCSELs 2010 Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 46:4, s. 506-512 Tidskriftsartikel (refereegranskat)abstract Higher speed short-wavelength (850 nm) VCSELs are required for future high-capacity, short-reach data communication links. The modulation bandwidth of such devices is intrinsically limited by the differential gain of the quantum wells (QWs) used in the active region. We present gain calculations using an 8-band k.p Hamiltonian which show that the incorporation of 10% In in an InGaAs/AlGaAs QW structure can approximately double the differential gain compared to a GaAs/AlGaAs QW structure, with little additional improvement achieved by further increasing the In composition in the QW. This improvement is confirmed by extracting the differential gain value from measurements of the modulation response of VCSELs with optimized InGaAs/AlGaAs QW and conventional GaAs/AlGaAs QW active regions. Excellent agreement is obtained between the theoretically and experimentally determined values of the differential gain, confirming the benefits of strained InGaAs QW structures for high-speed 850-nm VCSEL applications.
39.	Ingham, J.D., et al. (författare) 32 Gb/s multilevel modulation of an 850 nm VCSEL for next-generation datacommunication standards 2011 Ingår i: 2011 Conference on Lasers and Electro-Optics, CLEO 2011; Baltimore, MD; 1 May 2011 through 6 May 2011. - Washington, D.C. : OSA. - 2162-2701. - 9781557529107 Konferensbidrag (refereegranskat)abstract An 850 nm vertical-cavity surface-emitting laser is modulated at 32 Gb/s using pulseamplitude modulation with four levels. Transmitter predistortion generates an optimized modulation waveform, which requires a receiver bandwidth of only 15 GHz.
40.	Ingham, Jonathan D., et al. (författare) Orthogonal multipulse modulation for next-generation datacommunication links 2011 Ingår i: 37th European Conference on Optical Communication and Exhibition, ECOC 2011, Geneva, 18 September 2011 through 22 September 2011. - 9781557529312 Konferensbidrag (refereegranskat)

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Resultat 31-40 av 83

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Typ av publikation: konferensbidrag (48); tidskriftsartikel (35)

Typ av innehåll: refereegranskat (68); övrigt vetenskapligt/konstnärligt (15)

Författare/redaktör: Larsson, Anders,... (83)Ta bort avgränsningen; Haglund, Åsa, 19... (83)Ta bort avgränsningen; Gustavsson, Johan, 1 ... (76); Westbergh, Petter, 1 ... (54); Kögel, Benjamin, 197 ... (26); Haglund, Erik, 1985 (23); visa fler...; Bengtsson, Jörgen, 1 ... (22); Modh, Peter, 1968 (10); Szczerba, Krzysztof, ... (8); Debernardi, P. (8); Karlsson, Magnus, 19 ... (6); Andrekson, Peter, 19 ... (6); Jedrasik, Piotr, 195 ... (6); Safaisini, Rashid, 1 ... (6); Joel, A. (5); Fattal, David (5); Sorin, W. V. (5); Wang, Shu Min, 1963 (4); Sadeghi, Mahdad, 196 ... (4); Amann, M. C. (4); Vukusic, Josip, 1972 (4); Agrell, Erik, 1965 (3); Stattin, Martin, 198 ... (3); Zhao Ternehäll, Huan ... (3); Baveja, P. P. (3); Gierl, Christian (3); Meissner, Peter (3); Hopfer, Friedhelm (3); Bimberg, Dieter (3); O'Reilly, E. P. (3); Haglund, Emanuel, 19 ... (3); Tan, Michael (3); Sun, Jie, 1977 (2); Adolfsson, Göran, 19 ... (2); Yurgens, Avgust, 195 ... (2); Olsson, Bengt-Erik, ... (2); White, I. H. (2); Maywar, D. N. (2); Agrawal, G. P. (2); Bimberg, D. (2); Carlsson, Christina, ... (2); Davani, Hooman A. (2); Grasse, Christian (2); Zogal, Karolina (2); Gründl, Tobias (2); Küppers, F. (2); Ortsiefer, M. (2); Fiol, Gerrit (2); Healy, S. B. (2); Söderberg, Emma, 198 ... (2); visa färre...

Lärosäte: Chalmers tekniska högskola (83); Linköpings universitet (1)

Språk: Engelska (83)

Forskningsämne (UKÄ/SCB): Teknik (71); Naturvetenskap (20)

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