Diffusion of hydrogen in 6H silicon carbide

• 6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50-keV H(+) ions and subsequently annealed at temperatures between 200 and 1150 C. Using depth profiling by secondary ion mass spectrometry, the motion of hydrogen is observed in the implanted region for temperatures above 700 C. A diffusion coefficient of about 10 exp -14 sq cm/s is extracted at 800 C with an approximate activation energy of about 3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects, and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900 C, and are tentatively identified as carbon-hydrogen centers at a Si vacancy.

Nyckelord

SILICON CARBIDES

HYDROGEN IONS

IONIC DIFFUSION

N-TYPE SEMICONDUCTORS

DIFFUSION COEFFICIENT

CRYSTAL DEFECTS

GASEOUS DIFFUSION

ANNEALING

MASS SPECTROSCOPY

TECHNOLOGY

TEKNIKVETENSKAP

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