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- Stattin, Martin, 1983, et al.
(författare)
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Graphene as transparent electrode for GaN-based VCSELs
- 2012
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Ingår i: International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan. ; , s. ThP-OD-34-
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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- Sun, Jie, 1977, et al.
(författare)
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Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt
- 2012
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Ingår i: IEEE Transactions on Semiconductor Manufacturing. - : Institute of Electrical and Electronics Engineers (IEEE). - 0894-6507 .- 1558-2345. ; 25:3, s. 494-501
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Tidskriftsartikel (refereegranskat)abstract
- Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950 degrees C. Various characterization methods verify that the synthesized thin films are largely sp(2) bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.
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