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Sökning: AMNE:(NATURVETENSKAP Fysik) > Högskolan i Halmstad

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1.
  • Campanini, Donato, et al. (författare)
  • Raising the superconducting T-c of gallium : In situ characterization of the transformation of alpha-Ga into beta-Ga
  • 2018
  • Ingår i: Physical Review B. - : American Physical Society. - 2469-9950 .- 2469-9969. ; 97:18
  • Tidskriftsartikel (refereegranskat)abstract
    • Gallium (Ga) displays several metastable phases. Superconductivity is strongly enhanced in the metastable beta-Ga with a critical temperature T-c = 6.04(5) K, while stable alpha-Ga has a much lower T-c < 1.2 K. Here we use a membrane-based nanocalorimeter to initiate the transition from alpha-Ga to beta-Ga on demand, as well as study the specific heat of the two phases on one and the same sample. The in situ transformation is initiated by bringing the temperature to about 10 K above the melting temperature of alpha-Ga. After such treatment, the liquid supercools down to 232 K, where beta-Ga solidifies. We find that beta-Ga is a strong-coupling type-I superconductor with Delta(0)/k(B)T(c) = 2.00(5) and a Sommerfeld coefficient gamma(n) = 1.53(4) mJ/molK(2), 2.55 times higher than that in the alpha phase. The results allow a detailed comparison of fundamental thermodynamic properties between the two phases.
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2.
  • Willa, K., et al. (författare)
  • Nanocalorimeter platform for in situ specific heat measurements and x-ray diffraction at low temperature
  • 2017
  • Ingår i: Review of Scientific Instruments. - Melville, NY : AIP Publishing. - 0034-6748 .- 1089-7623. ; 88:12
  • Tidskriftsartikel (refereegranskat)abstract
    • Recent advances in electronics and nanofabrication have enabled membrane-based nanocalorimetry for measurements of the specific heat of microgram-sized samples. We have integrated a nanocalorimeter platform into a 4.5 T split-pair vertical-field magnet to allow for the simultaneous measurement of the specific heat and x-ray scattering in magnetic fields and at temperatures as low as 4 K. This multi-modal approach empowers researchers to directly correlate scattering experiments with insights from thermodynamic properties including structural, electronic, orbital, and magnetic phase transitions. The use of a nanocalorimeter sample platform enables numerous technical advantages: precise measurement and control of the sample temperature, quantification of beam heating effects, fast and precise positioning of the sample in the x-ray beam, and fast acquisition of x-ray scans over a wide temperature range without the need for time-consuming re-centering and re-alignment. Furthermore, on an YBa2Cu3O7-delta crystal and a copper foil, we demonstrate a novel approach to x-ray absorption spectroscopy by monitoring the change in sample temperature as a function of incident photon energy. Finally, we illustrate the new insights that can be gained from in situ structural and thermodynamic measurements by investigating the superheated state occurring at the first-order magneto-elastic phase transition of Fe2P, a material that is of interest for magnetocaloric applications.
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3.
  • Höglund, Linda, 1974-, et al. (författare)
  • Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
  • 2008
  • Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 93:10, s. 103501-
  • Tidskriftsartikel (refereegranskat)abstract
    • The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs.
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4.
  • Liu, Ruisheng, et al. (författare)
  • Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
  • 2007
  • Ingår i: Applied Physics Letters. - New York : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 90:12, s. 123111-
  • Tidskriftsartikel (refereegranskat)abstract
    • The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island.
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5.
  • Liu, Ruisheng S., et al. (författare)
  • Magnetoresistance studies on CoAl OX Au and CoAl OX NiAu tunnel structures
  • 2008
  • Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 93:20, s. 203107-203107-3
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on magnetoresistance (MR) studies on CoAl OX Au and CoAl OX NiAu magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field. 2008 American Institute of Physics.
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6.
  • Liu, Ruisheng, et al. (författare)
  • Tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions
  • 2008
  • Ingår i: Nano letters (Print). - Washington : American Chemical Society. - 1530-6984 .- 1530-6992. ; 8:3, s. 848-852
  • Tidskriftsartikel (refereegranskat)abstract
    • We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.
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7.
  • Pettersson, Håkan, et al. (författare)
  • Optically induced charge storage and current generation in InAs quantum dots
  • 2002
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 65:7, s. 0733041-0733044
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on optically induced charge storage effects and current generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.
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8.
  • Suyatin, Dmitry, et al. (författare)
  • Nano-Schottky contacts realized by bottom-up technique
  • 2010
  • Ingår i: INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. - Piscataway, N.J. : IEEE Press. - 9781424435432 ; , s. 252-253
  • Konferensbidrag (refereegranskat)abstract
    • Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts. Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the InAs segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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9.
  • Gooth, Johannes, et al. (författare)
  • Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
  • 2016
  • Ingår i: ACS Nano. - Washington : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 10:7, s. 7180-7188
  • Tidskriftsartikel (refereegranskat)abstract
    • Locally induced, magnetic order on the surface of a topological insulator nanowire could enable room-temperature topological quantum devices. Here we report on the realization of selective magnetic control over topological surface states on a single facet of a rectangular Bi2Te3 nanowire via a magnetic insulating Fe3O4 substrate. Low-temperature magnetotransport studies provide evidence for local time-reversal symmetry breaking and for enhanced gapping of the interfacial 1D energy spectrum by perpendicular magnetic-field components, leaving the remaining nanowire facets unaffected. Our results open up great opportunities for development of dissipation-less electronics and spintronics.
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10.
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