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Sökning: AMNE:(TEKNIKVETENSKAP) > Chalmers tekniska högskola

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1.
  • Aazh, H, et al. (författare)
  • Influence of ear canal occlusion and static pressure difference on bone conduction thresholds: Implications for mechanisms of bone conduction
  • 2005
  • Ingår i: International Journal of Audiology. - : Informa Healthcare. - 1499-2027 .- 1708-8186. ; 44:5, s. 302-306
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of air pressure change on bone conduction (BC) hearing thresholds in the occluded ear was investigated. The pump manometer system of an impedance bridge was used to change the air pressure in the ear canal of twenty-two normally hearing subjects. BC thresholds were measured with: (1) open ear; (2) the ear canal occluded with a probe tube and application of 0 daPa air pressure; and (3) the ear canal occluded with a probe tube and application of -350 daPa air pressure. Thresholds were lower in condition 2 than in condition 1, the difference decreasing from 27 dB at 2500 Hz to 4.5 dB at 2000 Hz. Thresholds were higher in condition 3 than in condition 2. The results are interpreted in terms of changes in the relative contribution of the three routes of transmission for BC sound produced by occlusion and by a static pressure difference.
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2.
  • Abadei, S., et al. (författare)
  • Microwave properties of tunable capacitors basee on magnetron sputtered ferroelectric Na0.5K0.5NbO3 film on low and high resistivity silicon substrates
  • 2001
  • Ingår i: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 39:1-4, s. 359-366
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • In this work, small signal DC voltage dependent dielectric permittivity, loss tangent, and tuneability of magnetron sputtered epitaxial Na0.5K0.5NO3 films are studied experimentally. (100)-oriented Na0.5K0.5NbO3 films are deposited onto SiO2-buffered CMOS grade low resistivity (p = 10-20 cm) and high resistivity (p = 15-45 kcm) silicon substrates. Planar capacitors with 2 or 4 m gaps between electrodes have been fabricated on top of ferroelectric films. These devices have been characterized in the frequency range 1.0 MHz to 50 GHz at temperatures 30 - 300K. Na0.5K0.5NbO3/SiO2/Si structures on high resistivity silicon substrate exhibit C-V performances typical for Metal-Insulator- Semiconductor (MIS) capacitors. At low frequencies, f 1.0 GHz, the large tuneability and large losses are associated with the MIS structure, while at higher microwave frequencies the tuneability is mainly associated with the ferroelectric, film. At 1.0 MHz and room temperature, the tuneability of Na0.5K0.5NbO3/SiO2/Si structures more than 90%, reducing to 10-15 % at 50 GHz. The losses decrease with increasing the DC bias and frequency. A Q-factor more than 15 at 50 GHz is observed. The dielectric permittivity of the Na0.5K0.5NbO3 film is in the range 50-150 at frequencies 0.045-50 GHz. On low resistivity substrate the performance of Na0.5K0.5NbO3 films is completely screened by the high losses in silicon, and the tuneability is negligible. © 2001 Taylor and Francis.
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3.
  • Aggerstam, Thomas, et al. (författare)
  • GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 mu m intersubband absorption
  • 2007
  • Ingår i: Quantum Sensing and Nanophotonic Devices IV. - : SPIE. - 9780819465924 ; 6479, s. 64791E-
  • Konferensbidrag (refereegranskat)abstract
    • We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-mu m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.
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4.
  • Alexander-Webber, J. A., et al. (författare)
  • Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
  • 2013
  • Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 111:9, s. e096601-
  • Tidskriftsartikel (refereegranskat)abstract
    • We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρxx=0) shows a [1-(T/Tc)2] dependence and persists up to Tc>45  K at 29 T. With magnetic field Ic was found to increase ∝B3/2 and Tc∝B2. As the Fermi energy approaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.
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5.
  • Alfredsson, Svante (författare)
  • Constitutive Behaviour and Fracture of Adhesive Layers : Inverse Methods and Energetic Balance
  • 2004
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • In the automobile industry, current demands on reduced emissions with maintained or even increased crash worthiness, forces the industry to seek weight-reducing designs. The possibility to use lightweight materials is obviously attractive. At joints, these lightweight materials have to be connected to high-strength or low-cost materials. In this context adhesive joining can provide a flexible solution. The method adds little weight to the structure, it allows for material combinations that are not possible to weld, and it provides increased stiffness to the structure as compared to the conventional spot-welding procedure. Moreover, electrolytic isolation of the multi-material joints is achieved. In this thesis, experimental methods are developed to determine the complete stress-deformation relation for an adhesive layer loaded in shear. Generally, the stress distribution is non-uniform in the test geometries used. Evaluation of experiments is performed using an inverse method. The idea is to measure the energy release rate as a function of the crack tip deformation. The stress-deformation relation is obtained by a subsequent differentiation. The method is shown to be capable of capturing the complete stress-deformation relation under stable loading conditions. A method to accurately determine the energy release rate is needed for the inverse method to be successful. A closed form expression for the energy release rate of the end-notch flexure adhesive joint specimen (ENF) is derived in this thesis. An approximate formula containing measurable quantities is also given. It is shown that both the applied load and the crack tip deformation are needed to determine the instantaneous value of the energy release rate of the ENF-specimen. Experimental results show that the influence of the crack tip deformation can be substantial. An alternative specimen is also analysed theoretically. An initial theoretical study on mixed mode fracture of adhesive layers is also given in this thesis. A detailed comparison is made of the mode-mixity obtained using two different, frequently used mechanical models; the beam/adhesive layer model, and the continuum model, i.e. a model neglecting the presence of the adhesive layer. It is tempting to assume that the two methods would produce similar results for the case of a thin adhesive layer. However, this is only the case for geometries which are materially and geometrically symmetric with respect to the adhesive layer. For asymmetric joints, on the other hand, the two models are found to predict fundamentally different values of the mode-mixity. Moreover, the mode-mixity of the beam/adhesive layer model is found to depend highly on the relative stiffness of the adherends and the adhesive layer. This dependency is found to be quantified through two parameters.
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6.
  • Alvandpour, Atila, 1960-, et al. (författare)
  • Multi-phase clock generation and synchronization
  • 2003
  • Patent (populärvet., debatt m.m.)abstract
    • A method for controlling a local clock includes receiving a reference clock and generating a phase-shifted version of the reference clock. The two clocks are synchronized using a closed-loop method that produces a control signal. The control signal is smoothed during the closed-loop method and the smoothed signal is then used, instead of the control signal, in generating the phase-shifted clock
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7.
  • Anderberg, Cecilia, et al. (författare)
  • Cylinder Liners and Consequences of Improved Honing
  • 2006
  • Ingår i: Proceedings of Nordtrib conference 2006, Helsingor, Danemark. ; , s. 13-
  • Konferensbidrag (refereegranskat)abstract
    • The demands on decreased environmental impact from vehicles are resulting in a strong push for decreased engine oil and fuel consumption. Engine oil and fuel consumption are to a great extent controlled by the topography of the cylinder liner surface.Recent engine tests have shown a promising reduction in oil consumption when using cylinder liners with a smoother finish than the current plateau honing.One approach to produce smoother liner surfaces is to replace SiC ceramic honing stones with diamond tools. However, event though the diamond honing process results in higher productivity, improved demands of quality control is needed to monitor the degree of cold worked material - “blechmantel” (German), and the resulting risk of increased wear and scuffing.A number of petrol and diesel engine cylinder liners have been mapped to be able to verify the quality and consequences, in terms of wear and function, of the honing process. A new mapping method, combining SEM images and quantitative image analysis with traditional 2D profilometry has been developed and tested in this study. The liners where tested in a reciprocating rig of 8 mm stroke and with a frequency of 10 Hz, simulating the top-dead center conditions in a running engine.The tests where carried out in high- and low pressure conditions with smooth respectively rough liner roughnesses against PVD coated piston rings. The developed surface mapping method was employed before and after the test to study effect of running-in wear on the surface, features characterized with the SEM- and the 2D profilometer.The results show that combining SEM- and profilometric methods gives a good picture of the effects of varying the cylinder liner pressure and roughness. The core roughness decrease more for diesel liners than for petrol liners. In average (rough and smooth liners) the diesel core roughness decrease 265% while the petrol liners average on a 60% decrease. Blechmantel- and Irregularities ratio show a high sensitivity to varying conditions and decrease 1180% to 100% for the diesel liners while the parameters increase between 106% to 18% for all the petrol liners. A probable cause is the more severe diesel high pressure run-in conditions are able to effectively “truncate” the plateaux and remove residing plastically deformed un-cut honing residues while the less severe petrol liner conditions not manage to remove the blechmantel and irregularities in an important extent.
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8.
  • Andersson, Mattias, et al. (författare)
  • Intrinsic and extrinsic influences on the temperature dependence of mobility in conjugated polymers
  • 2008
  • Ingår i: Organic electronics. - : Elsevier. - 1566-1199 .- 1878-5530. ; 9:5, s. 569-574
  • Tidskriftsartikel (refereegranskat)abstract
    • The temperature dependence of charge carrier mobility in conjugated polymers and their blends with fullerenes is investigated with different electrical methods, through field effect transistor (FET), space charge limited current (SCLC) and charge extraction (CELIV) measurements. Simple models, such as the Gaussian disorder model (GDM), are shown to accurately predict the temperature behavior, and a good correlation between the different measurement methods is obtained. Inconsistent charge carrier concentrations in the modeling are explained through intrinsic non-equilibrium effects, and are responsible for the limited applicability of existing numerical models. A severe extrinsic influence from water in FETs with a hydrophilic insulator interface is also demonstrated. The presence of water leads to a significant overestimate of the disorder in the materials from measurements close to room temperature and erratic behavior in the 150-350 K range. To circumvent this problem it is shown to be necessary to measure under ultra high vacuum (UHV) conditions. © 2008 Elsevier B.V. All rights reserved.
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9.
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10.
  • Baker, A M R, et al. (författare)
  • Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
  • 2013
  • Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X .- 2469-9950 .- 2469-9969. ; 87:4, s. 045414-
  • Tidskriftsartikel (refereegranskat)abstract
    • Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by similar to 40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of T-e(4) at low temperatures and depend weakly on carrier density proportional to n(-1/2), evidence for enhancement of the energy loss rate due to disorder in CVD samples.
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