| 1. |
- Asplund, Carl-Johan
(författare)
-
University-Industry Educational Collaboration : Knowledge spillovers and spillins through student-written cases and MSc theses
- 2024
-
Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Most companies and organizations are primarily interested in universities' educational activities and to a lesser extent in universities' research activities. Against this background, it is strange that the research on collaboration between universities and the surrounding society is primarily directed towards research collaboration between universities and companies/organizations and to a lesser extent towards educational collaboration between universities and companies/organizations. The purpose of this thesis is to increase both the empirical and theoretical knowledge of educational collaboration between universities and the surrounding society, specifically companies and organizations. The thesis particularly wants to contribute to increased knowledge about the advantages and success factors related to educational collaboration for universities, students, and teachers as well as the collaborating companies and public organizations. This contribution is made by answering the overarching research question:What are the benefits of university-industry educational collaboration and howcan university-industry educational collaboration succeed?Five studies have been conducted. Two qualitative studies on Student-Written Cases within a master's course "Technology Strategies" which are based on real cases within collaborating companies. A quantitative study of MSc theses was performed at the Faculty of Engineering and the School of Economics and Management, both at Lund University, during 2016, as well as a survey study of collaborating companies and organizations related to these MSc theses. Finally, a conceptual study has been conducted to develop the theoretical understanding of educational collaboration.The thesis demonstrates that educational collaboration within individual courses must be planned and implemented carefully with collaborating companies or organizations. The purpose of the collaboration must be clearly communicated to all stakeholders. The thesis also presents a tested model for how Student-Written Cases and teaching notes based on real situations in companies and public organizations can be planned and implemented in teaching.When it comes to MSc projects that are carried out in collaboration with companies and organizations, studies show that it is mainly larger companies that have realized the value of educational collaboration. They have seen the importance of this mainly in terms of recruiting students, but also for knowledge support in their innovation processes, especially for product innovations and in the early innovation phases, i.e., screening of new technologies and development of applications. The thesis also shows a slightly lower interest from Small and Medium-sized Enterprises (SMEs) in educational collaboration. The SMEs that get involved in MSc thesis projects have a greater interest in problem solutions in the later innovation process, i.e., prototyping and testing them. To engage more SMEs in MSc thesis projects, more information, and stronger incentives, such as vouchers, are required to increase interest. The thesis concludes with elaborating a conceptual framework that describes the development stages of a university institution’s collaborative capabilities.
|
|
| 2. |
- Asplund, Carl Johan, et al.
(författare)
-
Knowledge spillover from Master of Science Theses in Engineering Education in Sweden
- 2020
-
Ingår i: European Journal of Engineering Education. - : Informa UK Limited. - 0304-3797 .- 1469-5898. ; 45:3, s. 443-456
-
Tidskriftsartikel (refereegranskat)abstract
- Educational collaboration activities are generally under-researched part of the interactive learning between universities and industry. The study based on 529 Master of Science (MSc) theses from a major Swedish engineering school, the faculty of engineering LTH at Lund University, shows that MSc theses are a frequently used collaboration mechanism between university and industry in engineering education. Collaborating firms benefit mainly by recruiting students and the transfer of technological knowledge. Moreover, mainly regional large firms benefit from the educational collaboration and firms collaborate mostly on knowledge related to product innovations and in the early stages of the product innovation process. Small and medium-sized enterprises (SMEs) tend to relate to newer engineering disciplines, have relatively more MSc thesis projects related to product innovations and later process stages, specifically in prototype development and testing, than large firms have. The paper suggests a number of university actions to increase knowledge spillover to SMEs.
|
|
| 3. |
- Hoglund, Linda, et al.
(författare)
-
Type-II InAs/GaSb superlattices for dual color infrared detection
- 2017
-
Ingår i: QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV. - : SPIE-INT SOC OPTICAL ENGINEERING. - 9781510606647
-
Konferensbidrag (refereegranskat)abstract
- Midwave-midwave dual color detection has been successfully demonstrated by using pixel filters fabricated on top of InAs/GaSb focal plane arrays (FPAs). The pixel filters used in these FPAs were designed to transmit infrared radiation in the 3.5 - 4.1 mu m wavelength region and to completely block light shorter than 3.5 mu m. By comparing the signals of filtered and unfiltered pixels, excellent contrast between the two bands were obtained. This design concept offers a great flexibility to tailor the transmission window to any wavelength range within the 3-5 mu m wavelength region. In particular, this dual color detector concept has been used for gas detection of volatile organic compounds which have main absorption peaks at 3.3 mu m.
|
|
| 4. |
- Gustafsson, Oscar, et al.
(författare)
-
A performance assessment of type-II interband In0.5Ga 0.5Sb QD photodetectors
- 2013
-
Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 61, s. 319-324
-
Tidskriftsartikel (refereegranskat)abstract
- Self-assembled quantum-dot (QD) structures with type-II band alignment to the surrounding matrix material have been proposed as a III/V material approach to realize small-bandgap device structures suitable for photon detection and imaging in the long-wavelength infrared (LWIR) band. Here, we analyze the photoresponse of In0.5Ga0.5Sb/InAs QD photodiodes and estimate the system performance of type-II QD -based photodetectors. A review of alternative design approaches is presented and the choice of matrix material is discussed in terms of band alignment and its effect on the photoresponse. Photodiodes were fabricated consisting of 10 layers of In0.5Ga 0.5Sb QDs grown on InAs (0 0 1) substrates with metal-organic vapor-phase epitaxy (MOVPE). The photoresponse and dark current were measured in single pixel devices as a function of temperature in the range 20-230 K. The quantum efficiency shows an Arrhenius type behavior, which is attributed to hole trapping. This severely limits the detector performance at typical LWIR sensor operating temperatures (60-120 K). A device design with the matrix material InAs0.6Sb0.4 is proposed as a mean to improve the performance by reducing the barrier for hole transport. This can potentially allow type-II InGaSb QDs to be a competitive sensor material for LWIR detection.
|
|
| 5. |
- Gustafsson, Oscar, et al.
(författare)
-
Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots
- 2013
-
Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 59, s. 89-92
-
Tidskriftsartikel (refereegranskat)abstract
- We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.
|
|
| 6. |
- Karim, Amir, et al.
(författare)
-
In(Ga)Sb/InAs quantum dot based IR photodetectors with thermally activated photoresponse
- 2013
-
Ingår i: Proceedings of SPIE. - : SPIE. - 9780819494955
-
Konferensbidrag (refereegranskat)abstract
- We report on the device characterization of In(Ga)Sb/InAs quantum dots (QDs) based photodetectors for long wave IR detectors. The detection principle of these quantum-dot infrared photodetectors (QDIPs) is based on the spatially indirect transition between the In(Ga)Sb QDs and the InAs matrix, as a result of the type-II band alignment. Such photodetectors are expected to have lower dark currents and higher operating temperatures compared to the current state of the art InSb and mercury cadmium telluride (MCT) technology. The In(Ga)Sb QD structures were grown using metal-organic vapour-phase epitaxy and explored using structural, electrical and optical characterization techniques. Material development resulted in obtaining photoluminescence up to 10 μm, which is the longest wavelength reported in this material system. We have fabricated different photovoltaic IR detectors from the developed material that show absorption up to 8 μm. Photoresponse spectra, showing In(Ga)Sb QD related absorption edge, were obtained up to 200 K. Detectors with different In(Ga)Sb QDs showing different cut-off wavelengths were investigated for photoresponse. Photoresponse in these detectors is thermally activated with different activation energies for devices with different cut-off wavelengths. Devices with longer cut-off wavelength exhibit higher activation energies. We can interpret this using the energy band diagram of the dots/matrix system for different QD sizes.
|
|
| 7. |
|
|
| 8. |
- Wang, Qin, et al.
(författare)
-
Surface states characterization and simulation of type-II In(Ga)Sb quantum dot structures for processing optimization of LWIR detectors
- 2013
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 9780819494955
-
Konferensbidrag (refereegranskat)abstract
- Quantum structures base on type-II In(Ga)Sb quantum dots (QDs) embedded in an InAs matrix were used as active material for achieving long-wavelength infrared (LWIR) photodetectors in this work. Both InAs and In(Ga)Sb are narrow band semiconductor materials and known to possess a large number of surface states, which apparently play significant impact for the detector's electrical and optical performance. These surface states are caused not only by material or device processing induced defects but also by surface dangling bonds, oxides, roughness and contaminants. To experimentally analyze the surface states of the QD structures treated by different device fabrication steps, atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) measurements were performed. The results were used to optimize the fabrication process of the LWIR photodetectors in our ongoing project. The dark current and its temperature dependence of the fabricated IR photodetectors were characterized in temperature range 10 K to 300 K, and the experiment results were analyzed by a theoretic modeling obtained using simulation tool MEDICI.
|
|
| 9. |
- Gustafsson, Oscar, et al.
(författare)
-
Photoluminescence photoresponse from InSb/InAs-based quantum dot structures
- 2012
-
Ingår i: Optics Express. - : Optical Society of America. - 1094-4087. ; 20:19, s. 21264-71
-
Tidskriftsartikel (refereegranskat)abstract
- InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 μm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 μm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 μm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
|
|
| 10. |
- Karim, Amir, et al.
(författare)
-
Characterization of InAs/GaSb type€II superlattice photodiodes for mid€wave IR with different mesa sidewall passivation schemes
- 2012
-
Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; c9:7, s. 1690-2
-
Tidskriftsartikel (refereegranskat)abstract
- We report on the electrical material characterization of InAs/GaSb type-II superlattice (T2SL) mid-wave infrared (MWIR) photodiodes with different passivation schemes on the mesa-sidewalls with significant differences in the resulting low temperature dark currents. Devices fabricated by dry etching passivated with polymerized photoresist, show orders of magnitude lower dark currents as compared to unpassivated devices. The mesa side walls were examined using high resolution transmission electron microscopy (HRTEM) with a special focus on the interface between the superlattice material the dielectric passivation. Material analysis on nanometer scale at the mesa sidewall interface was performed using energy dispersive X-ray (EDX) spectrometry. EDX line scans were obtained from interfaces for different passivated unpassivated devices, using the highly focused electron beam in TEM, to investigate the chemical compositions. The unpassivated photoresist-passivated mesas, with different electrical properties, revealed different sidewall morphologies compositions. An oxygen containing layer was observed in photoresist-passivated devices covering the whole mesa sidewall. We think this plays a role in reducing surface leakage dark current. In HR-TEM the mesa sidewall topography reveals preferential etching of one superlattice component as previously observed. Nevertheless, the dielectric material covers the sidewall uniformly.
|
|
