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Sökning: L4X0:0280 7971 > Eklund Per Dr

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1.
  • Fashandi, Hossein (författare)
  • Functional Nanostructures for Gas Sensors
  • 2015
  • Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • This research focuses on three main topics within the aims of FUNMAT, which are:Ohmic contacts to high-temperature chemical gas sensors.Studies of catalytic monolayers on active gate metal in SiC-based gas sensors.Investigating potential sensing properties of the nanoscale material MXene.Within the first research topic, we study the growth of Ohmic contacts to 4H-SiC for high temperature and corrosive environment applications, being a need in chemical gas sensors e.g. for automotive industry. For this purpose, common commercially-synthesized contacts are not suitable, due to either the presence of low-melting point elements or rapid oxidation. Improving the previously reported growth methods, designing durable oxygen-barrier capping layers, and synthesizing new contact-materials are our main focuses.For the second research topic, we investigate the improvement of the sensing performance of platinum-based sensing layers in silicon carbide field-effect gas sensors, which have many industrial applications. This project started with modification of field-effect-based metal oxide semiconductor CO sensors by the synthesis of one monolayer iron oxide on the platinum sensing layers of the sensors. Monolayer metal oxides have been reported to enhance the catalytic properties of platinum which is a promising result to be used in improving the performance of gas sensors.And finally, the third research topic covers studies of newly synthesized materials to be explored for any potential sensing property. Our focus is on metal carbide nano-sheets known as MXene phases and to study their  gas adsorption properties. Due to several uninvestigated features of newly synthesized materials, ab.initio. theoretical studies are of importance.
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2.
  • Gharavi, Mohammad Amin (författare)
  • Nitride Thin Films for Thermoelectric Applications : Synthesis, Characterization and Theoretical Predictions
  • 2017
  • Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Thermoelectrics is the reversible process which transforms a temperature gradient across a material into an external voltage through a phenomenon known as the Seebeck effect. This has resulted in niche applications such as solid-state cooling for electronic and optoelectronic devices which exclude the need for a coolant or any moving parts and long-lasting, maintenance-free radioisotope thermoelectric generators used for deep-space exploration. However, the high price and low efficiency of thermoelectric generators have prompted scientists to search for new materials and/or methods to improve the efficiency of the already existing ones. Thermoelectric efficiency is governed by the dimensionless figure of merit ??, which depends on the electrical conductivity, thermal conductivity and Seebeck coefficient value of the material and has rarely surpassed unity.In order to address these issues, research conducted on early transition metal nitrides spearheaded by cubic scandium nitride (ScN) thin films showed promising results with high power factors close to 3000 μWm−1K−2 at 500 °C. In this thesis, rock-salt cubic chromium nitride (CrN) deposited in the form of thin films by reactive magnetron sputtering was chosen for its large Seebeck coefficient of approximately -200 μV/K and low thermal conductivity between 2 and 4 Wm−1K−1. The results show that CrN in single crystal form has a low electrical resistivity below 1 mΩcm, a Seebeck coefficient value of -230 μV/K and a power factor close to 5000 μWm−1K−2 at room temperature. These promising results could lead to CrN based thermoelectric modules which are cheaper and more stable compared to traditional thermoelectric material such as bismuth telluride (Bi2Te3) and lead telluride (PbTe).In addition, the project resulting this thesis was prompted to investigate prospective ternary nitrides equivalent to ScN with (hopefully) better thermoelectric properties. Scandium nitride has a relatively high thermal conductivity value (close to 10 Wm−1K−1), resulting in a low ??. A hypothetical ternary equivalent to ScN may have a similar electronic band structure and large power factor, but with a lower thermal conductivity value leading to better thermoelectric properties. Thus the elements magnesium, titanium, zirconium and hafnium were chosen for this purpose. DFT calculations were used to simulate TiMgN2, ZrMgN2 and HfMgN2. The results show the MeMgN2 stoichiometry to be stable, with two rivaling crystal structures: trigonal NaCrS2 and monoclinic LiUN2.
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3.
  • Halim, Joseph, 1985- (författare)
  • Synthesis and Characterization of 2D Nanocrystals and Thin Films of Transition Metal Carbides (MXenes)
  • 2014
  • Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Two dimensional (2D) materials have received growing interest because of their unique properties compared to their bulk counterparts. Graphene is the archetype 2D solid, but other materials beyond graphene, such as MoS2 and BN have become potential candidates for several applications. Recently, a new family of 2D materials of early transition metal carbides and carbonitrides (Ti2CTx, Ti3C2Tx, Ti3CNTx, Ta4C3Tx, and more), labelled MXenes, has been discovered, where T stands for the surface-terminating groups.Before the present work, MXenes had only been synthesized in the form of exfoliated and delaminated powders, which is not suitable for electronic applications. In this thesis, I demonstrate the synthesis of MXenes as epitaxial thin films, a more suitable form for electronic and photonic applications. Results show that 2D epitaxial Ti3C2Tx films - produced by HF and NH4HF2 etching of magnetron sputter-grown Ti3AlC2 - exhibit metallic conductive behaviour down to 100 K and are 90% transparent to light in the visible-infrared range. The results from this work may open the door for MXenes as potential candidates for transparent conductive electrodes as well as in electronic, photonic and sensing applications.MXenes have been shown to intercalate cations and molecules between their layers that in turn can alter the surface termination groups. There is therefore a need to study the surface chemistries of synthetized MXenes to be able to study the effect of intercalation as well as altering the surface termination groups on the electronic structure and chemical states of the elements present in MXene layers. X-ray Photoelectron Spectroscopy (XPS) in-depth characterization was used to investigate surface chemistries of Ti3C2Tx and Ti2CTx. This thesis includes the discussion of the effect of Ar+ sputtering and the number of layers on the surface chemistry of MXenes. This study serves as a baseline for chemical modification and tailoring of the surface chemistry groups to potential uses and applications.New MXene phases, Nb2CTx and V2CTx, are shown in this thesis to be produced from HF chemical etching of Nb2AlC and V2AlC powders. Characterization of the produced MXenes was carried out using Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), Transmission Electron Microscope (TEM) and XPS. Nb2CTx and V2CTx showed promising performance as electrodes for Li-ion batteries.In this thesis, electrochemical etching was used in an attempt to produce 2D metal carbides (MXene) from their ternary metal carbides, Ti3SiC2, Ti3AlC2 and Ti2AlC MAX phases. MAX phases in the form of highly dense bulk produced by Hot Isostatic Press. Several etching solutions were used such as HF, NaCl and HCl. Unlike the HF chemical etching of MAX phases, which results in MXenes, the electrochemical etching resulted in Carbide Derived Carbon (CDC). Here, I show the characterization of the produced CDC using several techniques such as XRD, TEM, Raman spectroscopy, and XPS. Electrochemical characterization was performed in the form of cyclic voltammetry, which sheds light on the etching mechanism.
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4.
  • Kerdsongpanya, Sit (författare)
  • Scandium Nitride Thin Films for Thermoelectrics
  • 2012
  • Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • Thermoelectric devices are one of the promising energy harvesting technologies, since they can convert heat (i.e. a temperature gradient) to electricity. This result leads us to use them to harvest waste heat from heat engines or in power plants to generate usable electricity. Moreover, thermoelectric devices can also perform cooling. The conversion process is clean, with no emission of greenhouse gases during the process. However, the converting efficiency of thermoelectrics is very low because of the materials limitations of the thermoelectric figure of merit (ZTm). Thus, there is high demand to maximize the ZTm.I have discovered that ScN has high power factor 2.5 mW/(mK2) at 800 K, due to low metalliclike electrical resistivity (∼3.0 μΩm) with retained relatively large Seebeck coefficient of -86 μV/K. The ScN thin films were grown by reactive dc magnetron sputtering from Sc targets. For ScN, X-ray diffraction, supported by transmission electron microscopy, show that we can obtain epitaxial ScN(111) on Al2O3(0001). We also reported effects on thermoelectric properties of ScN with small changes in the composition with the power factor changing one order of magnitude depending on e.g. oxygen, carbon and fluorine content which were determined by elastic recoil detection analysis. The presence of impurities may influence the electronic density of states or Fermi level (EF) which could yield enhancement of power factor.Therefore, the effects of defects and impurities on the electronic density of states of scandium nitride were investigated using first-principles calculations with general gradient approximation and hybrid functionals for the exchange correlation energy. Our results show that for Sc and N vacancies can introduce asymmetric peaks in the density of states close to the Fermi level. We also find that the N vacancy states are sensitive to total electron concentration of the system due to their possibility for spin polarization. Substitutional point defects shift the Fermi level in the electronic band according to their valence but do not introduce sharp features. The energetics and electronic structure of defect pairs are also studied. By using hybrid functionals, a correct description of the open band gap of scandium nitride is obtained, in contrast to regular general gradient approximation. Our results envisage ways for improving the thermoelectric figure of merit of ScN by electronic structure engineering through stoichiometry tuning and doping.
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5.
  • Khatibi, Ali, 1982- (författare)
  • Deposition and Phase Transformations of Ternary Al-Cr-O Thin Films
  • 2011
  • Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • This thesis concerns the ternary Al-Cr-O system. (Al1-xCrx)2O3 solid solution thin films with 0.62 gas mixture. As-deposited and annealed (Al1-xCrx)2O3 thin films were analyzed by x-ray diffraction, elastic recoil detection analysis, scanning electron microscopy, transmission electron microscopy, and nanoindentation. (Al1-xCrx)2O3 showed to have face centered cubic structure with lattice parameter of 4.04 Å, which is in contrast to the typical corundum structure reported for these films. The as-deposited films exhibited hardness of ~ 26 GPa and elastic modulus of 220-235 GPa. Phase transformation from cubic to corundum (Al0.32Cr0.68)2O3 starts at 925 °C. Annealing at 1000 °C resulted in complete phase transformation, while no precipitates of alumina and chromia were observed. Studies on kinetics of phase transformation showed a two-step thermally activated process; phase transformation and grain growth with the apparent activation energies 213±162 and 945±27 kJ/mol, respectively.
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6.
  • Sønderby, Steffen (författare)
  • Physical Vapor Deposition of Yttria-Stabilized Zirconia and Gadolinia-Doped Ceria Thin Films for Fuel Cell Applications
  • 2012
  • Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • In this thesis, reactive sputter deposition of yttria-stabilized zirconia (YSZ) and cerium gadolinium oxide (CGO) thin films for solid oxide fuel cell (SOFC) applications have been studied. All films have been deposited under industrial conditions.YSZ films were deposited on silicon wafers as well as commercial NiO-YSZ fuel cell anodes. The texture, morphology, and composition of the deposited films were investigated with respect to deposition parameters such as bias voltage which was identified as a key parameter to tailor the texture of the film and promote less columnar coatings when depositing on Si. In contrast, films grown on NiO-YSZ fuel cell anodes were seen to be randomly orientated when deposited at low substrate bias voltages. When the bias voltage was increased the film took over the orientation of underlying substrate due to substrate template effects. The deposited coatings were found to be homogeneous large areas within the coating zone, which is highly important for industrial applications.The performance of sputtered CGO thin films as diffusion barriers for stopping Sr diffusion between SOFC cathodes and electrolytes was also studied. This was done by introducing the sputtered CGO films in a metal-based SOFC setup. The performance depended on the density of the barrier layer, signifying that Sr diffusion and SrZrO3 formation is an issue. Area specific resistances down to 0.27 Ωcm2, corresponding to a maximum power density up to 1.14 W cm−2 at 650 °C could be obtained with sputtered CGO barrier layers in combination with Sr-doped lanthanum cobalt oxide cathodes which is a significant improvement compared conventional ceramic SOFCs.The diffusion mechanism of Sr through sputtered CGO films was investigated. For this purpose, a model system simulating a SOFC was prepared by depositing CGO and YSZ on cathode material. This setup allowed observation of Sr diffusion by observing SrZrO3 formation using X-ray diffraction while annealing. Electron microscopy was subsequently performed to confirm the results. It was found that Sr diffused along column/grain boundaries in the CGO films but by modifying the film thickness and microstructure the breaking temperature of the barrier could be increased.
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7.
  • Tengstrand, Olof (författare)
  • Me-Si-C (Me= Nb, Ti or Zr) : Nanocomposite and Amorphous Thin Films
  • 2012
  • Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • This thesis investigates thin films of the transition metal carbide systems Ti-Si-C, Nb-Si-C, and Zr-Si-C, deposited at a low substrate temperature (350 °C) with dc magnetron sputtering in an Ar discharge. Both the electrical and mechanical properties of these systems are highly affected by their structure. For Nb-Si-C, both the ternary Nb-Si-C and the binary Nb-C are studied. I show pure NbC films to consist of crystalline NbC grains embedded in a matrix of amorphous carbon. The best combination of hardness and electrical resistivity are for ~15 at.% a-C phase. The properties of nc-NbC/a-C are similar to films consisting of nc-TiC/a-C. I further show that in a model system of epitaxial TiCx (x ~0.7) up to 5 at.% Si can be incorporated. At higher Si content, Si starts segregate out from the TiCx to the grain boundaries causing a loss of epitaxy. Higher amounts of Si into the Nb-Si-C and Zr-Si-C systems make them become amorphous. These amorphous structures are unstable under electron irradiation were they crystallize. I show that the cause of crystallization is driven by atomic displacement events.
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  • Resultat 1-7 av 7

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